公开(公告)号：US07329475B2

公开(公告)日：2008-02-12

申请号：US10896968

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/00

CPC分类号： G03F1/60

摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.

摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差值为0.5微米的磷酸三钙的基底。

公开(公告)号：US20050019677A1

公开(公告)日：2005-01-27

申请号：US10896970

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： B32B9/00 ,  B32B17/06 ,  G03F1/00 ,  G03F1/60 ,  G03F9/00

CPC分类号： G03F1/60

摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.

摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。

公开(公告)号：US20050019676A1

公开(公告)日：2005-01-27

申请号：US10896968

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/50 ,  G03F1/60 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F1/60

摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is μoτ μoρε τηαν 0.5 μm is selected.

摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差为muotau muorhoepsilon tauetaalphanu 0.5um的衬底。

公开(公告)号：US07351504B2

公开(公告)日：2008-04-01

申请号：US10896970

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/00

CPC分类号： G03F1/60

摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.

摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。

公开(公告)号：US08533634B2

公开(公告)日：2013-09-10

申请号：US12659396

申请日：2010-03-08

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G06F17/50 ,  G03F1/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/311

CPC分类号： G03F1/70

摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

摘要翻译： 制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板 由曝光装置的卡盘单元夹持，基于平坦度变化数据产生位置校正，要在掩模毛坯基板上绘制的图案的数据，使得曝光掩模的掩模图案在状态下到达预定位置 曝光掩模由卡盘单元卡住，并且在掩模坯料基板上绘制图案，绘制包括绘制图案的图案，校正图案的绘图位置并输入与图案相对应的绘图数据和位置校正数据 成为绘图装置。

公开(公告)号：US08465907B2

公开(公告)日：2013-06-18

申请号：US13525712

申请日：2012-06-18

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G03F7/26

CPC分类号： G03F7/707 ,  G03F1/60 ,  G03F7/703 ,  G03F7/70433 ,  G03F7/70783 ,  Y10S438/975

摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

公开(公告)号：US08407629B2

公开(公告)日：2013-03-26

申请号：US13491639

申请日：2012-06-08

申请人： Masamitsu Itoh ,  Satoshi Tanaka

发明人： Masamitsu Itoh ,  Satoshi Tanaka

IPC分类号： G06F17/50

CPC分类号： G03F1/86

摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.

摘要翻译： 根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件 以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试 在光刻模拟的结果。

公开(公告)号：US08407628B2

公开(公告)日：2013-03-26

申请号：US12770062

申请日：2010-04-29

申请人： Masamitsu Itoh ,  Takashi Hirano ,  Kazuya Fukuhara

发明人： Masamitsu Itoh ,  Takashi Hirano ,  Kazuya Fukuhara

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G06F17/5081 ,  G03F1/50

摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

公开(公告)号：US20120040293A1

公开(公告)日：2012-02-16

申请号：US13282497

申请日：2011-10-27

申请人： Ryoichi Inanami ,  Yumi Nakajima ,  Masamitsu Itoh

发明人： Ryoichi Inanami ,  Yumi Nakajima ,  Masamitsu Itoh

IPC分类号： G03F7/20 ,  B82Y40/00

CPC分类号： G03F1/24

摘要： A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.

摘要翻译： 一种反射掩模，包括：反射层，其被布置在其上照射有EUV光的一侧的表面上并且反射所述EUV光; 包含Cr的缓冲层，其布置在其上照射有EUV光的反射层的一侧并覆盖反射层的整个表面; 以及布置在其上照射有EUV光的缓冲层侧的非反射层，并且其中吸收被照射的EUV光的吸收体被布置在与要被还原并转移到其上的掩模图案相对应的位置 晶圆。

公开(公告)号：US20100228379A1

公开(公告)日：2010-09-09

申请号：US12659396

申请日：2010-03-08

申请人： Masamitsu Itoh

发明人： Masamitsu Itoh

IPC分类号： G06F19/00

CPC分类号： G03F1/70

摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.

摘要翻译： 制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板 由曝光装置的卡盘单元夹持，基于平坦度变化数据产生位置校正，要在掩模毛坯基板上绘制的图案的数据，使得曝光掩模的掩模图案在状态下到达预定位置 曝光掩模由卡盘单元卡住，并且在掩模坯料基板上绘制图案，绘制包括绘制图案的图案，校正图案的绘图位置并输入与图案相对应的绘图数据和位置校正数据 成为绘图装置。