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    Thin-film transistor, method of producing the same, and devices provided with the same
    7.
    发明授权
    Thin-film transistor, method of producing the same, and devices provided with the same 有权
    薄膜晶体管及其制造方法及其制造方法

    公开(公告)号：US08692252B2

    公开(公告)日：2014-04-08

    申请号：US12964375

    申请日：2010-12-09

    申请人： Masahiro Takata ,  Masashi Ono ,  Masayuki Suzuki ,  Atsushi Tanaka

    发明人： Masahiro Takata ,  Masashi Ono ,  Masayuki Suzuki ,  Atsushi Tanaka

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.

    摘要翻译： 公开了一种包括氧化物半导体层的薄膜晶体管。 氧化物半导体层包括在膜厚度方向上形成阱型电位的第一区域，第二区域和第三区域。 第一个区域形成井型势阱，具有第一电子亲和力。 第二区域设置为比第一区域更靠近栅电极，并且具有小于第一电子亲和力的第二电子亲和力。 第三区域被设置为比第一区域更远离栅电极，并且具有小于第一电子亲和力的第三电子亲和力。 至少第三区域的氧浓度低于第一区域的氧浓度。