公开(公告)号：US5161049A

公开(公告)日：1992-11-03

申请号：US686422

申请日：1991-04-16

申请人： Masayuki Tanno ,  Toshiaki Watanabe ,  Toshihiko Ryuo

发明人： Masayuki Tanno ,  Toshiaki Watanabe ,  Toshihiko Ryuo

IPC分类号： G02B27/28 ,  G02F1/09

CPC分类号： G02F1/093

摘要： An optical isolator according to the present invention comprises a first polarizer, a Faraday rotator and a second polarizer which are adhered to one another in this order and held in a cylindrical magnet, wherein at least one adhered and supported portion comprises a low melting point glass 7 and 8. As the low melting point glass 7, 8, there may be used, for instance, those mainly comprising lead oxide and boron oxide; zinc oxide, lead oxide and boron oxide; lead oxide, boron oxide and thallium oxide; phosphoric acid and aluminum oxide; zinc oxide and boron oxide; and phosphorous pentaoxide, aluminum oxide and boron oxide. In the optical isolator according to the present invention, a low melting point glass is used for adhering the structural parts for the optical isolator, there is not observed any outgassing phenomenon due to the raise in ambient temperature as in the isolator which is assembled with an adhesive and the discrepancy of the optical axis due to the expansion of the adhesive. As a result, the isolator of the present invention has stable optical properties. Moreover, the underlying plating layer is not peeled off as has been observed in the isolators which is assembled through soldering.

摘要翻译： 根据本发明的光隔离器包括第一偏振器，法拉第旋转器和第二偏振器，它们依次彼此粘附并保持在圆柱形磁体中，其中至少一个粘附和支撑部分包括低熔点玻璃 作为低熔点玻璃7,8，可以使用例如主要包含氧化铅和氧化硼的那些; 氧化锌，氧化铅和氧化硼; 氧化铅，氧化硼和氧化铊; 磷酸和氧化铝; 氧化锌和氧化硼; 和五氧化二磷，氧化铝和氧化硼。 在根据本发明的光隔离器中，使用低熔点玻璃粘附光隔离器的结构部件，由于环境温度升高，没有观察到任何除气现象，如在与 粘合剂和由于粘合剂的膨胀导致的光轴的差异。 结果，本发明的隔离器具有稳定的光学特性。 此外，如在通过焊接组装的隔离器中已经观察到的，底层镀层没有被剥离。

公开(公告)号：US4968954A

公开(公告)日：1990-11-06

申请号：US353796

申请日：1989-05-18

申请人： Toshihiko Ryuo ,  Satoru Fukuda ,  Tatsuo Mori ,  Masayuki Tanno

发明人： Toshihiko Ryuo ,  Satoru Fukuda ,  Tatsuo Mori ,  Masayuki Tanno

IPC分类号： H01F10/24 ,  H03B9/14 ,  H03H2/00

CPC分类号： H01F10/245 ,  H03B9/142 ,  H03H2/001

摘要： An improved epitaxial single crystal wafer suitable as a working element of magnetostatic wave devices is proposed which comprises a substrate single crystal wafer of a rare earth gallium garnet, e.g., gadolinium gallium garnet, neodymium gallium garnet and samarium gallium garnet, and an epitaxial layer formed thereon having a chemical composition, different from conventional yttrium iron garnet, Y.sub.3 Fe.sub.5 O.sub.12, of the formula(Y.sub.1-x M.sub.x).sub.a Fe.sub.8-a O.sub.12 or (Y.sub.1-x M.sub.x).sub.a (Fe.sub.1-Y Q.sub.y).sub.8-a O.sub.12,in which M is an element selected from the group consisting of bismuth, lanthanum, gadolinium and lutetium, the subscript a is a positive number in the range from 3.0 to 3.1, the subscript x is a positive number in the range from 0.01 to 0.9, Q is an element selected from the group consisting of aluminum, gallium, indium and scandium and the subscript y is a positive number in the range from 0.1 to 0.2. These epitaxial wafers are advantageous in respect of the greatly decreased problem of mismatching in the lattice constants between the substrate and the epitaxial layer.

摘要翻译： 提出了一种适合作为静磁波器件的工作元件的改进的外延单晶晶片，其包括稀土镓石榴石的衬底单晶晶片，例如钆镓石榴石，钕镓石榴石和钐镓石榴石，以及形成的外延层 （Y1-xMx）aFe8-aO12或（Y1-xMx）a（Fe1-YQy）8-aO12的化学成分不同于常规的钇铁石榴石Y3Fe5O12，其中M是选自 由铋，镧，钆和镥构成的组，下标a为3.0〜3.1的正数，下标x为0.01〜0.9的正数，Q为选自 由铝，镓，铟和钪组成，下标y为0.1〜0.2的正数。 这些外延晶片对于衬底和外延层之间的晶格常数不匹配的大大降低的问题是有利的。

公开(公告)号：US5808525A

公开(公告)日：1998-09-15

申请号：US690576

申请日：1996-07-31

申请人： Masayuki Tanno ,  Satoru Fukuda ,  Yoshiyuki Shiono ,  Toshihiko Ryuo

发明人： Masayuki Tanno ,  Satoru Fukuda ,  Yoshiyuki Shiono ,  Toshihiko Ryuo

IPC分类号： H01P1/215 ,  H03H2/00

CPC分类号： H03H2/001

摘要： Proposed is an improvement in a magnetostatic surface wave device such as an S/N enhancer comprising a thin film chip of a magnetic oxide garnet, e.g., gallium-substituted YIG epitaxially grown on the surface of a substrate, e.g., GGG, to which a magnetic field is applied within the plane of the thin film. The low-pass cut-off frequency of the microwaves can be decreased to 400 MHz or lower and the half-value width of magnetic resonance .DELTA.H can be small enough when the principal plane of the thin film of the magnetic oxide garnet is the (110) plane and the magnetic field applied thereto is in such a direction that the angle between the direction of the magnetic field and the direction of the axis of the thin film within the (110) plane is in the range from .+-.27.degree. to .+-.33.degree..

摘要翻译： 提出了一种静电表面波装置的改进，例如S / N增强器，其包括磁性氧化物石榴石的薄膜芯片，例如外延生长在基底表面上的镓取代的YIG，例如GGG，其中 磁场施加在薄膜的平面内。 当磁性氧化石榴石的薄膜的主平面为（（））时，微波的低通截止频率可以降低到400MHz或更低，并且磁共振DELTA H的半值宽度可以足够小， 110）面，并且施加到其上的磁场的方向为使得（110）面内的薄膜的磁场方向与<100>轴方向之间的角度在+ -27°至+/- 33°。

公开(公告)号：US5785752A

公开(公告)日：1998-07-28

申请号：US571097

申请日：1995-12-12

申请人： Masayuki Tanno ,  Toshihiko Ryuo

发明人： Masayuki Tanno ,  Toshihiko Ryuo

IPC分类号： C30B29/28 ,  C30B19/02 ,  H01F1/00 ,  H01F10/24 ,  H01P1/215 ,  H01P1/23 ,  H01P1/32 ,  H01P3/00 ,  C30B15/20

CPC分类号： H01F10/245 ,  C30B19/02 ,  C30B29/28 ,  Y10S117/902 ,  Y10S117/917

摘要： Proposed is an improvement in the method for the preparation of a chip of an oxide garnet film epitaxially having a specific chemical composition as grown on the surface of a GGG substrate wafer having a crystallographic plane orientation of (111), which is useful as a working element in a magnetostatic wave device such as high-frequency filters, signal noise enhancers, isolators and the like with decreased temperature dependence of the properties. The epitaxially grown single crystal film is adjusted to have such dimensions that the thickness h and the smallest dimension L within the plane of the film satisfy the relationship that the ratio h/L is in the range from 0.001 to 0.25.

摘要翻译： 提出了在具有（111）的晶面取向的GGG基板晶片的表面上生长具有特定化学组成的外延氧化石榴石膜的芯片的制备方法的改进，其可用作工作 诸如高频滤波器，信号噪声增强器，隔离器等的静磁波器件中具有降低的性能温度依赖性的元件。 调整外延生长的单晶膜的尺寸，使膜的平面内的厚度h和最小尺寸L满足比例h / L为0.001〜0.25的关系。

公开(公告)号：US5519803A

公开(公告)日：1996-05-21

申请号：US302182

申请日：1994-09-09

申请人： Yoshiyuki Shiono ,  Masayuki Tanno ,  Shohei Kozakai ,  Toshihiko Ryuo

发明人： Yoshiyuki Shiono ,  Masayuki Tanno ,  Shohei Kozakai ,  Toshihiko Ryuo

IPC分类号： G02B6/12 ,  G02B6/132 ,  G02B6/10

CPC分类号： G02B6/132

摘要： Proposed is an improved optical waveguide consisting of a substrate plate such as a silicon wafer, an undercladding layer of silica glass thereon, a core line of silica glass extending on the undercladding layer and having a larger refractive index than the undercladding layer and an overcladding layer of silica glass having a smaller refractive index than the core line to cover the undercladding layer and the core line thereon altogether. Different from conventional optical waveguides of this type, of which each of the undercladding layer, core line and overcladding layer is formed by the flame deposition method of silica or electron-beam vapor deposition method followed by vitrification taking a relatively long time, the overcladding layer in the inventive optical waveguide is formed by forming a layer of an organopolysiloxane resin on the undercladding layer and core line followed by the oxidative thermal decomposition of the resin into silica and vitrification of the same. Alternatively, an optical waveguide, which is conventional as mentioned above but of which the thickness of the overcladding layer is greatly decreased, is provided with a top coating layer from the organopolysiloxane resin as above. The inventive optical waveguides can be manufactured with greatly increased productivity.

摘要翻译： 提出了一种改进的光波导，其由诸如硅晶片的基板，其上的二氧化硅玻璃的下包层，在下包层上延伸并且具有比下封层更大的折射率的石英玻璃芯线和外包层 具有比芯线折射率小的石英玻璃，以覆盖下包层和其上的芯线。 与传统的这种类型的光波导不同，其中通过二氧化硅的火焰沉积法或电子束气相沉积法形成下包层，芯线和外包层中的每一个，随后玻璃化花费相当长的时间，外包层 在本发明的光波导中通过在下包层和芯线上形成有机聚硅氧烷树脂层，然后将树脂氧化热分解成二氧化硅并使其玻璃化而形成。 或者，如上所述的常规的，但是外包层的厚度大大降低的光波导由如上所述的有机聚硅氧烷树脂设置有顶涂层。 本发明的光波导可以大大提高生产率来制造。

公开(公告)号：US5616176A

公开(公告)日：1997-04-01

申请号：US495934

申请日：1995-06-28

申请人： Satoru Fukuda ,  Masayuki Tanno ,  Toshihiko Ryuo

发明人： Satoru Fukuda ,  Masayuki Tanno ,  Toshihiko Ryuo

IPC分类号： C30B29/28 ,  C30B19/02 ,  G02F1/09 ,  H01F10/24 ,  H01F41/28

CPC分类号： H01F41/28 ,  C30B19/02 ,  C30B29/28 ,  H01F10/245

摘要： A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formulaGd.sub.a Ho.sub.b Eu.sub.d Bi.sub.3-a-b-d Fe.sub.5-c M.sub.c O.sub.12,in which M is an element or a combination of elements selected from the group consisting of aluminum, scandium, gallium and indium, the subscript a is a positive number in the range from 1.1 to 2.1, the subscript b is a positive number in the range from 0.1 to 0.9, the subscript c is 0 or a positive number not exceeding 0.5 and the subscript d is zero or a positive number not exceeding 0.6 or, in particular, in the range from 0.03 to 0.6 with the proviso that 3-a-b-d is in the range from 0.7 to 1.2.

摘要翻译： 提出了一种新颖的稀土类氧化石榴石单晶，其适用于磁光器件中元素的材料，以显示大大降低的光吸收损耗，其通过在氧化石榴石单晶晶片上的液体外延生长法制备 并且具有由通式GdaHobEudBi3-ab-dFe5-cMcO12表示的化学组成，其中M是选自铝，钪，镓和铟的元素或元素的组合，下标a是正数 在1.1至2.1的范围内，下标b为0.1至0.9的正数，下标c为0或不超过0.5的正数，下标d为0或不超过0.6的正数， 特别是在0.03至0.6的范围内，条件是3-abd在0.7至1.2的范围内。