公开(公告)号：US20240162105A1

公开(公告)日：2024-05-16

申请号：US18548704

申请日：2022-03-29

Applicant: Massachusetts Institute of Technology

Inventor： Tomas Palacios ,  Ahmad Zubair ,  John Niroula

IPC: H01L23/31 ,  H01L29/20 ,  H01L29/778 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L23/3192 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/8725

Abstract: A semiconductor device having an electric field management layer. The electric field management layer comprises a material with a relatively high dielectric constant that minimizes the risk of an electric field within the semiconductor device breaking down and damaging the semiconductor device.