公开(公告)号：US09932689B2

公开(公告)日：2018-04-03

申请号：US14155546

申请日：2014-01-15

申请人： Massachusetts Institute of Technology

发明人： Emanuel M Sachs ,  James G. Serdy ,  Eerik T. Hantsoo

IPC分类号： C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02 ,  H01L23/31 ,  H01L29/04

CPC分类号： C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02667 ,  H01L23/3171 ,  H01L29/04 ,  H01L2924/0002 ,  H01L2924/00

摘要： An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

公开(公告)号：US20140124963A1

公开(公告)日：2014-05-08

申请号：US14155546

申请日：2014-01-15

申请人： Massachusetts Institute of Technology

发明人： Emanuel M Sachs ,  James G. Serdy ,  Eerik T. Hantsoo

IPC分类号： C30B13/00 ,  H01L23/31 ,  H01L29/04

CPC分类号： C30B13/00 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02667 ,  H01L23/3171 ,  H01L29/04 ,  H01L2924/0002 ,  H01L2924/00

摘要： An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

摘要翻译： 原始晶片（通常为硅）具有期望的端部PV晶片的形式。 原件可以通过快速凝固或CVD制成。 它有小颗粒。 它被封装在干净的薄膜中，其在再结晶时含有并保护硅以产生更大的晶粒结构。 胶囊可以通过在氧气或蒸汽的存在下加热晶片来制造，从而在外表面上产生二氧化硅，通常为1-2微米。 至少一个支撑元件在胶囊被提供时支撑晶片，并且仅阻挡与成膜气氛接触的最小表面积。 可以存在多个支撑元件，或者表面可以提供这样的支撑。 胶囊在再结晶期间含有熔融材料，防止杂质。 重结晶可能在空气中。 重结晶后，除去胶囊。