-
公开(公告)号:US20120111402A1
公开(公告)日:2012-05-10
申请号:US13289151
申请日:2011-11-04
IPC分类号: H01L31/0232 , H01L31/18
CPC分类号: H01L31/1868 , H01L31/02167 , H01L31/02168 , H01L31/056 , Y02E10/52 , Y02P70/521
摘要: A solar cell includes a semiconductor substrate, a rear side passivation layer arranged on a light-remote rear side surface of the substrate, a covering layer arranged on the rear side passivation layer, and a metallization layer arranged on the covering layer. The covering layer has a protective layer section facing the rear side passivation layer and a contact layer section facing the metallization layers. The contact layer section has a higher refractive index than the protective layer section
摘要翻译: 太阳能电池包括半导体衬底,布置在衬底的光远侧后表面上的后侧钝化层,布置在后侧钝化层上的覆盖层和布置在覆盖层上的金属化层。 覆盖层具有面向后侧钝化层的保护层部分和面向金属化层的接触层部分。 接触层部分具有比保护层部分更高的折射率
-
2.
公开(公告)号:US20120032310A1
公开(公告)日:2012-02-09
申请号:US13198789
申请日:2011-08-05
CPC分类号: H01L21/2255 , H01L21/268 , H01L31/02167 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: A process for producing a semiconductor device comprises the following process steps: provision of a semiconductor substrate (1); formation of a functional layer (2) on a semiconductor surface (11) of the semiconductor substrate (1); and production of at least one doped section (3) on the semiconductor surface (11) by driving a dopant into the semiconductor substrate (1) from the functional layer (2). The functional layer (2) is formed in such a way that it passivates the semiconductor surface (11), acting as a passivation layer upon completion of the semiconductor device.
摘要翻译: 一种制造半导体器件的方法包括以下工艺步骤:提供半导体衬底(1); 在半导体衬底(1)的半导体表面(11)上形成功能层(2); 以及通过从功能层(2)将掺杂剂驱动到半导体衬底(1)中,在半导体表面(11)上生产至少一个掺杂部分(3)。 功能层(2)形成为使半导体表面(11)钝化,在半导体器件完成时用作钝化层。
-
3.
公开(公告)号:US20110308602A1
公开(公告)日:2011-12-22
申请号:US13161977
申请日:2011-06-16
IPC分类号: H01L31/0224 , H01L31/18 , G01R31/26 , H01L31/0232
CPC分类号: H01L31/02168 , H01L31/068 , Y02E10/547
摘要: A solar cell includes a semiconductor substrate and an antireflection layer arranged on the light incidence side on the front-side surface of a semiconductor substrate. The antireflection layer has a limit voltage of less than 10 volts, less than 5 volts, or less than 3 volts, along a layer thickness of the antireflection layer.
摘要翻译: 太阳能电池包括半导体基板和设置在半导体基板的正面侧的光入射侧的抗反射层。 抗反射层沿着抗反射层的层厚度具有小于10伏特,小于5伏特或小于3伏特的极限电压。
-
-