公开(公告)号：US20170243721A1

公开(公告)日：2017-08-24

申请号：US15589127

申请日：2017-05-08

Applicant: Mattson Technology, Inc.

Inventor： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01J2237/334

Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.