公开(公告)号：US20170243721A1

公开(公告)日：2017-08-24

申请号：US15589127

申请日：2017-05-08

Applicant: Mattson Technology, Inc.

Inventor： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01J2237/334

Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

公开(公告)号：US20130196510A1

公开(公告)日：2013-08-01

申请号：US13791532

申请日：2013-03-08

Applicant: Mattson Technology, Inc.

Inventor： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract translation: 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。