公开(公告)号：US20180286639A1

公开(公告)日：2018-10-04

申请号：US15936744

申请日：2018-03-27

Applicant: Mattson Technology, Inc.

Inventor： Martin L. Zucker ,  Tinghao Frank Wang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Pedestal assemblies for processing apparatus, such as plasma processing apparatus are provided. In one example implementation, a plasma processing apparatus can include a processing chamber having a processing chamber interior. The apparatus can include a plasma source configured to induce a plasma in the processing chamber interior. The apparatus can include a pedestal configured to support a substrate in the processing chamber interior during processing of the substrate. The apparatus can include a focus ring configured to be disposed around a periphery of the substrate when the substrate is supported on the pedestal. The focus ring can have a plurality of uniformly spaced apart slots. Each slot can be configured to engage with a corresponding protrusion located on the pedestal.

公开(公告)号：US08801947B2

公开(公告)日：2014-08-12

申请号：US13903258

申请日：2013-05-28

Applicant: Mattson Technology, Inc.

Inventor： Tinghao Frank Wang ,  Rao V. Annapragada ,  Cecilia Laura Quinteros ,  Linda Nancy Marquez ,  Steven M. Kennedy

IPC: B29D11/00

CPC classification number: H01L21/3065 ,  G02B3/0018 ,  H01J37/321 ,  H01L21/31116 ,  H01L27/14627 ,  H01L27/14685

Abstract: Methods for forming microlenses on a semiconductor substrate are provided. An inductively coupled plasma etch process using a process gas that includes a mixture of CF4 and CHF3 can be used to modify the lens shape of a plurality of microlens objects located on a semiconductor substrate to meet microlens specifications in terms of curvature, height, length, shape, and/or distance between adjacent microlens objects on the substrate. The inductively coupled plasma process can be performed in an inductively coupled plasma processing apparatus that includes a grounded Faraday shield to prevent any capacitive coupling during the plasma etching process to reduce sputtering of the microlens surface.

Abstract translation: 提供了在半导体衬底上形成微透镜的方法。 使用包括CF 4和CHF 3的混合物的处理气体的电感耦合等离子体蚀刻工艺可以用于修改位于半导体衬底上的多个微透镜物体的透镜形状，以满足微透镜规格的曲率，高度，长度， 形状和/或相邻的微透镜物体之间的距离。 电感耦合等离子体处理可以在包括接地法拉第屏蔽的电感耦合等离子体处理装置中进行，以防止在等离子体蚀刻工艺期间的任何电容耦合以减少微透镜表面的溅射。

公开(公告)号：US11195704B2

公开(公告)日：2021-12-07

申请号：US15936744

申请日：2018-03-27

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Martin L. Zucker ,  Tinghao Frank Wang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: Pedestal assemblies for processing apparatus, such as plasma processing apparatus are provided. In one example implementation, a plasma processing apparatus can include a processing chamber having a processing chamber interior. The apparatus can include a plasma source configured to induce a plasma in the processing chamber interior. The apparatus can include a pedestal configured to support a substrate in the processing chamber interior during processing of the substrate. The apparatus can include a focus ring configured to be disposed around a periphery of the substrate when the substrate is supported on the pedestal. The focus ring can have a plurality of uniformly spaced apart slots. Each slot can be configured to engage with a corresponding protrusion located on the pedestal.

公开(公告)号：US20130323933A1

公开(公告)日：2013-12-05

申请号：US13903258

申请日：2013-05-28

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： Tinghao Frank Wang ,  Rao V. Annapragada ,  Cecilia Laura Quinteros ,  Linda Nancy Marquez ,  Steven M. Kennedy

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  G02B3/0018 ,  H01J37/321 ,  H01L21/31116 ,  H01L27/14627 ,  H01L27/14685

Abstract: Methods for forming microlenses on a semiconductor substrate are provided. An inductively coupled plasma etch process using a process gas that includes a mixture of CF4 and CHF3 can be used to modify the lens shape of a plurality of microlens objects located on a semiconductor substrate to meet microlens specifications in terms of curvature, height, length, shape, and/or distance between adjacent microlens objects on the substrate. The inductively coupled plasma process can be performed in an inductively coupled plasma processing apparatus that includes a grounded Faraday shield to prevent any capacitive coupling during the plasma etching process to reduce sputtering of the microlens surface.

Abstract translation: 提供了在半导体衬底上形成微透镜的方法。 使用包括CF 4和CHF 3的混合物的处理气体的电感耦合等离子体蚀刻工艺可以用于修改位于半导体衬底上的多个微透镜物体的透镜形状，以满足微透镜规格的曲率，高度，长度， 形状和/或相邻的微透镜物体之间的距离。 电感耦合等离子体处理可以在包括接地法拉第屏蔽的电感耦合等离子体处理装置中进行，以防止在等离子体蚀刻工艺期间的任何电容耦合以减少微透镜表面的溅射。