公开(公告)号：US20230411125A1

公开(公告)日：2023-12-21

申请号：US18460151

申请日：2023-09-01

申请人： Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

发明人： Yorkman Ma ,  Dixit V. Desai

IPC分类号： H01J37/32

CPC分类号： H01J37/32522 ,  H01J37/32651 ,  H01J37/321 ,  H01J37/3299 ,  H01J37/3211 ,  H01J37/32119 ,  H01L21/67069

摘要： Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

公开(公告)号：US11749509B2

公开(公告)日：2023-09-05

申请号：US15896124

申请日：2018-02-14

申请人： Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

发明人： Yorkman Ma ,  Dixit V. Desai

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32522 ,  H01J37/321 ,  H01J37/3299 ,  H01J37/32651 ,  H01J37/3211 ,  H01J37/32119 ,  H01L21/67069

摘要： Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

公开(公告)号：US20200258718A1

公开(公告)日：2020-08-13

申请号：US16270063

申请日：2019-02-07

申请人： Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

发明人： Tinghao F. Wang ,  Yorkman Ma ,  Yun Yang ,  Shawming Ma ,  Moo-Hyun Kim ,  Peter J. Lembesis ,  Ryan M. Pakulski

IPC分类号： H01J37/32 ,  H01L21/67

摘要： Plasma processing apparatus and associated methods are provided. In one example implementation, the plasma processing apparatus can include a gas supply in a processing chamber of a plasma processing apparatus, such as an inductively coupled plasma processing apparatus. The gas supply can include one or more injectors. Each of the one or more injectors can be angled relative to a direction parallel to a radius of the workpiece to produce a rotational gas flow relative to a direction perpendicular to a center of the workpiece. Such gas supply can improve process uniformity, workpiece edge critical dimension tuning, gas ionization efficiency, and/or symmetric flow inside the processing chamber to reduce particle deposition on a workpiece and can also reduce heat localization from a stagnate flow.

公开(公告)号：US20180240652A1

公开(公告)日：2018-08-23

申请号：US15896124

申请日：2018-02-14

申请人： Mattson Technology, Inc.

发明人： Yorkman Ma ,  Dixit V. Desai

IPC分类号： H01J37/32 ,  H01J37/20 ,  H01J37/09

CPC分类号： H01J37/32651 ,  H01J37/09 ,  H01J37/20 ,  H01J37/32238 ,  H01J37/32522

摘要： Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.