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    Temperature Control Using Temperature Control Element Coupled to Faraday Shield
    2.
    发明申请
    Temperature Control Using Temperature Control Element Coupled to Faraday Shield 审中-公开

    公开(公告)号：US20180240652A1

    公开(公告)日：2018-08-23

    申请号：US15896124

    申请日：2018-02-14

    Applicant: Mattson Technology, Inc.

    Inventor： Yorkman Ma ,  Dixit V. Desai

    IPC: H01J37/32 ,  H01J37/20 ,  H01J37/09

    CPC classification number: H01J37/32651 ,  H01J37/09 ,  H01J37/20 ,  H01J37/32238 ,  H01J37/32522

    Abstract: Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

    Plasma Strip Tool With Uniformity Control
    3.
    发明申请
    Plasma Strip Tool With Uniformity Control 审中-公开

    公开(公告)号：US20180358210A1

    公开(公告)日：2018-12-13

    申请号：US15888257

    申请日：2018-02-05

    Applicant: Mattson Technology, Inc.

    Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32522 ,  H01J37/321 ,  H01J37/32422 ,  H01J37/32715 ,  H01J37/32816 ,  H01J37/32899 ,  H01J2237/002 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67207

    Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a first pedestal in the processing chamber operable to support a workpiece. The first pedestal can define a first processing station. The plasma processing apparatus can include a second pedestal in the processing chamber operable to support a workpiece. The second pedestal can define a second processing station. The apparatus can include a first plasma chamber disposed above the first processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The apparatus can include a second plasma chamber disposed above the second processing station. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

    Plasma Strip Tool With Multiple Gas Injection Zones
    4.
    发明申请
    Plasma Strip Tool With Multiple Gas Injection Zones 审中-公开

    公开(公告)号：US20180358204A1

    公开(公告)日：2018-12-13

    申请号：US15892723

    申请日：2018-02-09

    Applicant: Mattson Technology, Inc.

    Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan M. Pakulski

    IPC: H01J37/32 ,  G03F7/42

    CPC classification number: H01J37/3244 ,  B08B5/00 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32422

    Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus a first gas injection zone configured to inject a process gas into the plasma chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the plasma chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.

    Plasma Processing Apparatus and Methods
    5.
    发明申请
    Plasma Processing Apparatus and Methods 有权

    公开(公告)号：US20210257196A1

    公开(公告)日：2021-08-19

    申请号：US17225547

    申请日：2021-04-08

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

    Inventor： Shawming Ma ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Ryan M. Pakulski

    IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/311

    Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

    Spacer Open Process By Dual Plasma
    6.
    发明申请
    Spacer Open Process By Dual Plasma 有权

    公开(公告)号：US20210005456A1

    公开(公告)日：2021-01-07

    申请号：US16916849

    申请日：2020-06-30

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

    Inventor： Tsai Wen Sung ,  Chun Yan ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Peter J. Lembesis

    IPC: H01L21/033 ,  H01L21/311

    Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

    Plasma processing apparatus with post plasma gas injection
    7.
    发明授权
    Plasma processing apparatus with post plasma gas injection 有权

    公开(公告)号：US10790119B2

    公开(公告)日：2020-09-29

    申请号：US15851922

    申请日：2017-12-22

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

    Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  B08B7/00 ,  H01L21/02

    Abstract: Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

    Inductively Coupled Plasma Wafer Bevel Strip Apparatus
    9.
    发明申请
    Inductively Coupled Plasma Wafer Bevel Strip Apparatus 审中-公开

    公开(公告)号：US20190131112A1

    公开(公告)日：2019-05-02

    申请号：US16162741

    申请日：2018-10-17

    Applicant: Mattson Technology, Inc.

    Inventor： Shawming Ma ,  Dixit V. Desai ,  Ryan M. Pakulski

    IPC: H01J37/32 ,  H01L21/687 ,  H01L21/68

    Abstract: Plasma processing apparatus for processing a bevel portion of a substrate, such as a semiconductor wafer are provided. In one example implementation, a plasma processing apparatus includes a processing chamber and a plasma chamber separated from the processing chamber by a separation grid. The apparatus includes an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber. The pedestal can be configured to support a semiconductor wafer. The separation grid can have an edge portion and a blocking portion. The edge portion can be disposed above an edge portion of the semiconductor wafer when supported on the pedestal. The edge portion of the separation grid can have a plurality of holes configured to allow the passage of active radicals generating in the plasma to the processing chamber.

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