公开(公告)号：US20150340275A1

公开(公告)日：2015-11-26

申请号：US14425977

申请日：2012-09-05

申请人： Maud VINET ,  Nicolas LOUBET ,  Romain WACQUEZ

发明人： Maud VINET ,  Nicolas LOUBET ,  Romain WACQUEZ

IPC分类号： H01L21/762 ,  H01L21/8234 ,  H01L29/04 ,  H01L29/06 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/76224 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/823481 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/66772

摘要： A method of producing a microelectronic device in a substrate including a first semiconductor layer, a dielectric layer and a second monocrystalline semiconductor layer, the method including: etching a trench through the first semiconductor layer and the dielectric layer, and such that the trench delimits one active region of the microelectronic device; chemical vapor etching the second semiconductor layer, at a level of a bottom wall of the trench, according to at least two crystalline planes of the second semiconductor layer such that an etched part of the second semiconductor layer extends under a part of the active region; filling the trench and the etched part of the second semiconductor layer with a dielectric material.

摘要翻译： 一种在包括第一半导体层，电介质层和第二单晶半导体层的衬底中制造微电子器件的方法，所述方法包括：通过所述第一半导体层和所述介电层蚀刻沟槽，并且使得所述沟槽限定一个 微电子器件的有源区; 根据所述第二半导体层的至少两个晶面，使所述第二半导体层的蚀刻部分在所述有源区的一部分下方延伸，在所述沟槽的底壁的水平面刻蚀所述第二半导体层; 用介电材料填充沟槽和第二半导体层的蚀刻部分。

公开(公告)号：US20110143050A1

公开(公告)日：2011-06-16

申请号：US12965063

申请日：2010-12-10

申请人： Romain WACQUEZ ,  Christophe CONSTANCIAS ,  Philippe CORONEL

发明人： Romain WACQUEZ ,  Christophe CONSTANCIAS ,  Philippe CORONEL

IPC分类号： B05D5/00 ,  B05D3/06 ,  C23C16/56

CPC分类号： B81C1/00047 ,  B81B2203/0315 ,  B81C1/00206

摘要： The cavity has first and second main walls covered by a photoresist. The photoresist is subjected to electronic or electromagnetic radiation of wavelength comprised between 12.5 nm and 15 nm. A first thickness of the photoresist is exposed to form a first area of sacrificial material and a second area of different nature defining the surface coating. The sacrificial material is removed, the surface coating is formed and has a surface against one of the main walls and a free opposite surface. The lateral dimensions of the surface coating are defined in the cavity by the radiation through the first main wall.

摘要翻译： 空腔具有由光致抗蚀剂覆盖的第一和第二主壁。 光致抗蚀剂经受在12.5nm和15nm之间的波长的电子或电磁辐射。 暴露光致抗蚀剂的第一厚度以形成牺牲材料的第一区域和限定表面涂层的不同性质的第二区域。 去除牺牲材料，形成表面涂层并且具有抵抗主壁之一和自由相对表面的表面。 表面涂层的横向尺寸通过穿过第一主壁的辐射在空腔中限定。