公开(公告)号：US5449953A

公开(公告)日：1995-09-12

申请号：US358041

申请日：1994-12-15

申请人： Harvey C. Nathanson ,  Michael W. Cresswell ,  Thomas J. Smith, Jr. ,  Lewis R. Lowry, Jr. ,  Maurice H. Hanes

发明人： Harvey C. Nathanson ,  Michael W. Cresswell ,  Thomas J. Smith, Jr. ,  Lewis R. Lowry, Jr. ,  Maurice H. Hanes

IPC分类号： H01L21/762 ,  H01L21/764 ,  H01L21/84 ,  H01L21/86 ,  H01L23/36 ,  H01L23/29 ,  H01L23/48 ,  H01P3/08

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/84 ,  H01L21/86 ,  H01L21/76289 ,  H01L2924/0002

摘要： A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance. The resulting architecture is an alternative to gallium arsenide integrated circuits for microwave applications.

摘要翻译： 描述了基于硅的单片微波集成电路架构。 这种称为MICROX TM的架构是硅材料生长和晶圆处理技术的组合。 使用高电阻率硅材料的衬底制造晶片。 优选使用SIMOX工艺，在活性硅表面下方的晶片内形成绝缘层。 在晶片上制造单片电路。 在晶片背面形成接地平面电极。 微带互连和晶体管源极和漏极之间的直流和rf电容损耗由此最小化。 通过在晶片的底表面上保持屏蔽层，可以减少作为CMOS处理的结果的衬底材料的电阻率。 微带和气桥连接器，自对准处理和氮化物侧壁间距可用于进一步提高设备性能。 所得结构是用于微波应用的砷化镓集成电路的替代品。

公开(公告)号：US4207587A

公开(公告)日：1980-06-10

申请号：US887006

申请日：1978-03-16

申请人： Maurice H. Hanes ,  Lewis R. Lowry, Jr.

发明人： Maurice H. Hanes ,  Lewis R. Lowry, Jr.

IPC分类号： H01L23/04 ,  G02B6/42 ,  H01L23/051 ,  H01L29/74 ,  H01L31/0203 ,  H01L31/111 ,  H01L23/02 ,  H01L23/12 ,  H01L27/14

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4248 ,  G02B6/4295 ,  H01L23/051 ,  H01L31/1113 ,  H01L2924/0002 ,  H01L2924/16195

摘要： An hermetically sealed package for a light-triggered thyristor. The thyristor is mounted within the cavity of an insulating body. Cathode and anode pole pieces are mounted on opposite sides of and electrically coupled with the thyristor. Annular flanges are provided to form hermetical seals between the body and pole pieces. A light pipe is mounted in a radially extending slot formed through a face of one pole piece. An inner end of the light pipe is optically coupled with a light-sensitive region of the thyristor. The outer end of the light pipe is mounted within a metal sleeve which radially projects through an opening formed in a side of the body. An hermetical seal is formed between the light pipe and inner end of the sleeve by means of a glass frit in one embodiment, or by means of solder bonded between the sleeve and a metallized region formed about the light pipe in another embodiment. Another hermetical seal is formed by solder which bonds between the metal sleeve and a metallized region formed in the body about the opening. A connector fitting is mounted on an outer end of the sleeve for seating the end of a fiber optic cable which extends from a triggering light source.

摘要翻译： 用于光触发晶闸管的密封封装。 晶闸管安装在绝缘体的空腔内。 阴极和阳极极片安装在晶闸管的相对侧并与晶闸管电耦合。 提供环形凸缘以在主体和极片之间形成密封。 光管安装在通过一个极片的表面形成的径向延伸槽中。 光管的内端与晶闸管的光敏区光学耦合。 光管的外端安装在金属套筒内，该金属套筒通过形成在主体侧面的开口径向突出。 在一个实施例中，通过玻璃料在光管和套管的内端之间形成密封，或者在另一个实施例中通过在套管与围绕光管形成的金属化区域之间的焊料接合形成密封。 另一种密封由焊料形成，该焊料在金属套筒和形成在本体中的金属化区域围绕开口连接。 连接器配件安装在套筒的外端上，用于固定从触发光源延伸的光纤电缆的端部。