Monolithic microwave integrated circuit on high resistivity silicon
    1.
    发明授权
    Monolithic microwave integrated circuit on high resistivity silicon 失效
    高电阻硅上的单片微波集成电路

    公开(公告)号:US5449953A

    公开(公告)日:1995-09-12

    申请号:US358041

    申请日:1994-12-15

    摘要: A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance. The resulting architecture is an alternative to gallium arsenide integrated circuits for microwave applications.

    摘要翻译: 描述了基于硅的单片微波集成电路架构。 这种称为MICROX TM的架构是硅材料生长和晶圆处理技术的组合。 使用高电阻率硅材料的衬底制造晶片。 优选使用SIMOX工艺,在活性硅表面下方的晶片内形成绝缘层。 在晶片上制造单片电路。 在晶片背面形成接地平面电极。 微带互连和晶体管源极和漏极之间的直流和rf电容损耗由此最小化。 通过在晶片的底表面上保持屏蔽层,可以减少作为CMOS处理的结果的衬底材料的电阻率。 微带和气桥连接器,自对准处理和氮化物侧壁间距可用于进一步提高设备性能。 所得结构是用于微波应用的砷化镓集成电路的替代品。

    Transmit-receive means for phased-array active antenna system using rf
redundancy
    2.
    发明授权
    Transmit-receive means for phased-array active antenna system using rf redundancy 失效
    发射接收装置,用于使用rf冗余的相控阵有源天线系统

    公开(公告)号:US4823136A

    公开(公告)日:1989-04-18

    申请号:US13490

    申请日:1987-02-11

    摘要: An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receive cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaportion technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.

    摘要翻译: 一种改进的相控阵有源天线发射 - 接收装置,利用位于半导体材料的公共晶片上的阵列格式的多个单独的发射 - 接收单元。 每个发射 - 接收单元包括多个冗余的集成电路,注入到公共半导体衬底上的电子器件。 发射接收蜂窝小区利用新颖的倾斜机械开关,在发射接收小区的制造和测试期间,将各个电子设备永久地互连到发射或接收电路中。 由新型金属蒸发技术形成的射频和直流输入和输出通孔将公共半导体晶片的表面上的器件连接到下面的绝缘直流分配电路和射频歧管。 由共享公共中央处理装置,逻辑控制和散热装置的发射 - 接收单元组成的改进的相控阵有源天线发射 - 接收装置阵列导致标准相控阵有源天线系统的尺寸和重量的显着降低 。 天线系统尺寸和重量的显着降低对于在高级战术战机或空间应用中使用的宽带电子对抗系统或窄带相控阵有源天线雷达系统是非常重要的。

    Mitered mechanical switches
    3.
    发明授权
    Mitered mechanical switches 失效
    倾斜机械开关

    公开(公告)号:US4904831A

    公开(公告)日:1990-02-27

    申请号:US293164

    申请日:1989-01-03

    IPC分类号: G01S7/03 H01Q3/26 H01Q21/00

    摘要: An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receiver cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaporation technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.

    摘要翻译: 一种改进的相控阵有源天线发射 - 接收装置,利用位于半导体材料的公共晶片上的阵列格式的多个单独的发射 - 接收单元。 每个发射 - 接收器单元包括多个冗余的集成电路,注入到公共半导体衬底上的电子器件。 发射接收蜂窝小区利用新颖的倾斜机械开关,在发射接收小区的制造和测试期间,将各个电子设备永久地互连到发射或接收电路中。 由新型金属蒸发技术形成的射频和直流输入和输出通孔将公共半导体晶片的表面上的器件连接到下面的绝缘直流分配电路和射频歧管。 由共享公共中央处理装置,逻辑控制和散热装置的发射 - 接收单元组成的改进的相控阵有源天线发射 - 接收装置阵列导致标准相控阵有源天线系统的尺寸和重量的显着降低 。 天线系统尺寸和重量的显着降低对于在高级战术战机或空间应用中使用的宽带电子对抗系统或窄带相控阵有源天线雷达系统是非常重要的。

    Process for producing vias in semiconductor
    4.
    发明授权
    Process for producing vias in semiconductor 失效
    半导体通孔生产工艺

    公开(公告)号:US4894114A

    公开(公告)日:1990-01-16

    申请号:US292973

    申请日:1989-01-03

    IPC分类号: G01S7/03 H01Q3/26 H01Q21/00

    摘要: An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receive cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaporation technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.

    摘要翻译: 一种改进的相控阵有源天线发射 - 接收装置,利用位于半导体材料的公共晶片上的阵列格式的多个单独的发射 - 接收单元。 每个发射 - 接收单元包括多个冗余的集成电路,注入到公共半导体衬底上的电子器件。 发射接收蜂窝小区利用新颖的倾斜机械开关,在发射接收小区的制造和测试期间,将各个电子设备永久地互连到发射或接收电路中。 由新型金属蒸发技术形成的射频和直流输入和输出通孔将公共半导体晶片的表面上的器件连接到下面的绝缘直流分配电路和射频歧管。 由共享公共中央处理装置,逻辑控制和散热装置的发射 - 接收单元组成的改进的相控阵有源天线发射 - 接收装置阵列导致标准相控阵有源天线系统的尺寸和重量的显着降低 。 天线系统尺寸和重量的显着降低对于在高级战术战机或空间应用中使用的宽带电子对抗系统或窄带相控阵有源天线雷达系统是非常重要的。

    Motion compensated sensor
    7.
    发明授权
    Motion compensated sensor 失效
    运动补偿传感器

    公开(公告)号:US5412421A

    公开(公告)日:1995-05-02

    申请号:US122134

    申请日:1993-09-15

    IPC分类号: G01S3/04 H04N5/232 H04N7/18

    摘要: A sensor produces signals corresponding to positions of objects within a field of view over time. A motion detector is provided for determining movement of the sensor. Signals from the sensor and the detector go to a processing unit which causes an appropriate modification of the signal received from the sensor to compensate for the movement.

    摘要翻译: 传感器随着时间的推移产生与视场内的对象位置对应的信号。 提供运动检测器以确定传感器的运动。 来自传感器和检测器的信号进入处理单元,该处理单元对从传感器接收的信号进行适当的修改以补偿运动。

    Broadband microwave integrated circuit amplifier with capacitive
neutralization
    8.
    发明授权
    Broadband microwave integrated circuit amplifier with capacitive neutralization 失效
    宽带微波集成电路放大器采用电容中和

    公开(公告)号:US5355095A

    公开(公告)日:1994-10-11

    申请号:US838971

    申请日:1992-02-21

    IPC分类号: H03F3/18 H03F3/26

    CPC分类号: H03F3/265

    摘要: Push-pull complimentary MOSFET devices are formed in a thin active layer between the top surface of a high resistivity silicon wafer and a insulating layer implanted below the top surface. Each MOSFET is composed of a plurality of cells each having a source, a gate, and a drain region extending fully through the active layer. Grooves extending through the wafer are lined with vias which connect the source regions with a floating ground plane on the bottom of the wafer. The gates of all the cells are connected by a gate bus on the top surface. Air bridges spanning the gates and the source vias connect the drain conductors of each cell. Neutralizing capacitors connected between an input and an opposite output of the push-pull complimentary MOSFET devices match the parasitic capacitances of the devices and provide wide bandwidth amplification with roll off well into the GHz range without the need for tuning inductors.

    摘要翻译: 推挽互补MOSFET器件形成在高电阻率硅晶片的顶表面和植入在顶表面下方的绝缘层之间的薄的有源层中。 每个MOSFET由多个单元组成,每个单元具有完全延伸穿过有源层的源极,栅极和漏极区域。 延伸穿过晶片的沟槽衬有通孔,其将源区域与晶片底部上的浮动接地平面连接。 所有电池的栅极通过顶部表面上的栅极总线连接。 跨过门和源通孔的空气桥连接每个电池的漏极导体。 连接在推挽互补MOSFET器件的输入端和反相输出端之间的中和电容器与器件的寄生电容相匹配,并提供宽带宽放大,无需调谐电感器即可滚动到GHz范围内。

    Heat transfer device
    9.
    发明授权
    Heat transfer device 有权
    传热装置

    公开(公告)号:US08018053B2

    公开(公告)日:2011-09-13

    申请号:US12023831

    申请日:2008-01-31

    IPC分类号: H01L23/34 H01L35/00

    摘要: One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.

    摘要翻译: 一个实例公开了一种传热装置,其可以包括具有第一区域和第二区域的半导体材料。 第一区域和第二区域被掺杂以将带电载体从第一区域推动到第二区域。 传热装置还可以包括与第二区域热电连通的尖端的阵列。 散热器面向阵列,并且在尖端和散热器之间形成真空隧道区域。 传热装置还可以进一步包括用于相对于第一区域偏置散热器的电源。 第一区域限定N型半导体材料,第二区域限定P型半导体材料。

    Side spring micro-mirror
    10.
    发明授权
    Side spring micro-mirror 失效
    侧弹微镜

    公开(公告)号:US07119942B2

    公开(公告)日:2006-10-10

    申请号:US10879040

    申请日:2004-06-30

    IPC分类号: G02B26/00

    CPC分类号: G02B26/0841

    摘要: A micro-electrical mechanical system (MEMS) mirror assembly including an array of micro-mirrors formed on a substrate and having springs on one side and which angularly tilt between ON and OFF states in response to an electrostatic force generated by a voltage applied to an electrode located on the substrate. At least one, but preferably two springs in the form of two thin strips of metal attach to post(s) at the side edge of the mirror and act as springs which provide a restoring force when the mirror is tilted between an OFF state which occurs when the mirror is flat relative to the substrate with no voltage applied, and in the ON state when the mirror is tilted when a voltage is applied.

    摘要翻译: 一种微电机械系统(MEMS)反射镜组件,包括形成在基板上的微反射镜阵列,并且在一侧具有弹簧,并且响应于施加到一个电压的电压产生的静电力而在ON和OFF状态之间成角度地倾斜 电极位于基板上。 至少一个,但最好是两个金属条带形式的两个弹簧,在镜子的侧边缘附着到柱上,并且当弹簧在镜子在发生的关闭状态之间倾斜时提供恢复力 当反射镜相对于没有施加电压的基板是平坦的,并且当施加电压时镜子倾斜时处于导通状态。