公开(公告)号：US5250388A

公开(公告)日：1993-10-05

申请号：US200331

申请日：1988-05-31

申请人： Karl F. Schoch, Jr. ,  John Bartko ,  Maurice H. Hanes ,  Francis H. Ruddy

发明人： Karl F. Schoch, Jr. ,  John Bartko ,  Maurice H. Hanes ,  Francis H. Ruddy

IPC分类号： B29C35/08 ,  B29C59/16 ,  G03C5/00 ,  G03F7/00 ,  H01L51/30 ,  H01L21/04

CPC分类号： H01L51/0508 ,  B29C59/16 ,  H01L51/002 ,  H01L51/0041 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0541 ,  B29C2035/0872

摘要： Processes for producing stable, radiation hard, highly conductive polymers by a combination of chemical doping and ion irradiation and microelectronics are described. The highly conductive polymers formed by these processes may contain regions of different kinds of conductivity on the same polymer. Resist coatings and masks are used in conjunction with chemical doping and ion irradiation to create specific predetermined n and p conductivity patterns and insulation areas on polymeric films of selected thicknesses for electronic circuitry applications. The resulting circuitry, besides having a conductivity approaching that of metal, is extremely light in weight, flexible, and conductively stable. Several different configurations of microelectronic junction devices fabricated from single type or multiple type conductivity polymer films used either alone or with a polymer of opposite conductivity and a suitable metal or metals are disclosed.

摘要翻译： 描述了通过化学掺杂和离子照射和微电子的组合产生稳定的，辐射硬的，高导电的聚合物的方法。 通过这些方法形成的高导电性聚合物可以在同一聚合物上含有不同种类的导电性的区域。 抗蚀剂涂层和掩模与化学掺杂和离子辐射结合使用，以在电子电路应用的选定厚度的聚合物膜上产生特定的预定n和p导电图案和绝缘区域。 所得到的电路除了具有接近金属的导电性之外，重量轻，柔性和导电稳定性非常轻。 公开了由单一或多类型导电聚合物膜制造的微电子连接装置的几种不同结构，其单独使用或与具有相反导电性的聚合物和适用的金属或金属一起使用。

公开(公告)号：US5449953A

公开(公告)日：1995-09-12

申请号：US358041

申请日：1994-12-15

申请人： Harvey C. Nathanson ,  Michael W. Cresswell ,  Thomas J. Smith, Jr. ,  Lewis R. Lowry, Jr. ,  Maurice H. Hanes

发明人： Harvey C. Nathanson ,  Michael W. Cresswell ,  Thomas J. Smith, Jr. ,  Lewis R. Lowry, Jr. ,  Maurice H. Hanes

IPC分类号： H01L21/762 ,  H01L21/764 ,  H01L21/84 ,  H01L21/86 ,  H01L23/36 ,  H01L23/29 ,  H01L23/48 ,  H01P3/08

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/84 ,  H01L21/86 ,  H01L21/76289 ,  H01L2924/0002

摘要： A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance. The resulting architecture is an alternative to gallium arsenide integrated circuits for microwave applications.

摘要翻译： 描述了基于硅的单片微波集成电路架构。 这种称为MICROX TM的架构是硅材料生长和晶圆处理技术的组合。 使用高电阻率硅材料的衬底制造晶片。 优选使用SIMOX工艺，在活性硅表面下方的晶片内形成绝缘层。 在晶片上制造单片电路。 在晶片背面形成接地平面电极。 微带互连和晶体管源极和漏极之间的直流和rf电容损耗由此最小化。 通过在晶片的底表面上保持屏蔽层，可以减少作为CMOS处理的结果的衬底材料的电阻率。 微带和气桥连接器，自对准处理和氮化物侧壁间距可用于进一步提高设备性能。 所得结构是用于微波应用的砷化镓集成电路的替代品。

公开(公告)号：US4206469A

公开(公告)日：1980-06-03

申请号：US942580

申请日：1978-09-15

申请人： Maurice H. Hanes ,  Earl S. Schlegel

发明人： Maurice H. Hanes ,  Earl S. Schlegel

IPC分类号： H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/72

CPC分类号： H01L29/7802 ,  Y10S148/126

摘要： A planar high power Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) including a substrate with an epitaxial layer on a surface thereof. A gate electrode including a strip of metal extending across a surface of the epitaxial layer and having a plurality of fingers extending therefrom along its length. The gate electrode being electrically insulated from the epitaxial layer by a layer of oxide. A source electrode in the surface of the epitaxial layer including fingers extending therefrom and interdigitating with the fingers of the gate electrode. There are p and n diffusion regions formed in the epitaxial layer except in an area under each of the gate fingers, which area remains undiffused. A drain electrode is connected to the surface of the substrate opposed to the surface upon which the epitaxial layer is deposited.During operation of the MOSFET as the blocking voltage across the transistor increases and the transistor is in the OFF state, the horizontal components of fields from the adjacent and closely spaced p-regions cancel each other so that voltage breakdown due to junction curvature is avoided.

摘要翻译： 包括在其表面上具有外延层的衬底的平面大功率金属氧化物半导体场效应晶体管（MOSFET）。 一种栅极电极，包括延伸穿过外延层的表面的金属条，并且具有沿其长度从其延伸的多个指状物。 栅电极通过一层氧化物与外延层电绝缘。 在外延层的表面中的源电极包括从其延伸的指状物，并与栅电极的指状物交错。 在外延层中形成有p和n扩散区域，除了在每个栅极指状物下方的区域中，该区域保持不扩散。 漏电极连接到与沉积外延层的表面相对的衬底表面。 在MOSFET的工作过程中，晶体管两端的阻断电压增加，晶体管处于截止状态，来自相邻和紧密间隔的p区的场的水平分量相互抵消，从而避免了由于结曲率引起的电压击穿。

公开(公告)号：US4135099A

公开(公告)日：1979-01-16

申请号：US833624

申请日：1977-09-15

申请人： Richard J. Fiedor ,  Maurice H. Hanes

发明人： Richard J. Fiedor ,  Maurice H. Hanes

IPC分类号： H03K3/42 ,  H03K17/94 ,  G02B27/00

CPC分类号： H03K17/941 ,  Y10T307/773

摘要： A system for switching a high energy, short duration pulse from a high energy source to an impedance matched series load. A light activated semiconductor device having a rectifying junction is serially connected between the source and the load, and another light activated semiconductor device is connected in parallel across the load. A fast rise time laser light source sequentially activates the series connected device to initiate the energy pulse, and then actuates the device paralleled across the load to short circuit the load and terminate the energy pulse.

摘要翻译： 用于将高能量，短持续脉冲从高能量源切换到阻抗匹配的串联负载的系统。 具有整流结的光激活半导体器件串联连接在源极和负载之间，并且另一个光激活的半导体器件并联连接在负载上。 快速上升时间激光光源依次激活串联连接的装置以启动能量脉冲，然后使负载上并联的装置致动以使负载短路并终止能量脉冲。

公开(公告)号：US4131905A

公开(公告)日：1978-12-26

申请号：US800706

申请日：1977-05-26

申请人： Maurice H. Hanes ,  Lewis R. Lowry

发明人： Maurice H. Hanes ,  Lewis R. Lowry

IPC分类号： H01L31/0232 ,  G02B6/42 ,  H01L23/051 ,  H01L29/74 ,  H01L31/0203 ,  H01L31/111 ,  H01L27/14 ,  H01L23/02 ,  H01L31/00

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4248 ,  G02B6/4295 ,  H01L23/051 ,  H01L31/1113 ,  H01L2924/0002

摘要： An hermetically sealed package for a light-triggered thyristor. The thyristor is mounted within the cavity of an insulating body. Cathode and anode pole pieces are mounted on opposite sides of and electrically coupled with the thyristor. Annular flanges are provided to form hermetical seals between the body and pole pieces. A light pipe is mounted in a radially extending slot formed through a face of one pole piece. An inner end of the light pipe is optically coupled with a light-sensitive region of the thyristor. The outer end of the light pipe is mounted within a metal sleeve which radially projects through an opening formed in a side of the body. A glass frit is bonded between the light pipe and inner end of the sleeve to form an hermetical seal. Another hermetical seal is formed by solder which bonds between the metal sleeve and a metalized region formed in the body about the opening. A connector fitting is mounted on an outer end of the sleeve for seating the end of a fiber optic cable which extends from a triggering light source.

摘要翻译： 用于光触发晶闸管的密封封装。 晶闸管安装在绝缘体的空腔内。 阴极和阳极极片安装在晶闸管的相对侧并与晶闸管电耦合。 提供环形凸缘以在主体和极片之间形成密封。 光管安装在通过一个极片的表面形成的径向延伸槽中。 光管的内端与晶闸管的光敏区光学耦合。 光管的外端安装在金属套筒内，该金属套筒通过形成在主体侧面的开口径向突出。 在光管和套管的内端之间粘合玻璃料以形成气密密封。 另一种密封由焊料形成，该焊料在金属套筒和形成在本体周围的开口处的金属化区域之间结合。 连接器配件安装在套筒的外端上，用于固定从触发光源延伸的光纤电缆的端部。

公开(公告)号：US4291329A

公开(公告)日：1981-09-22

申请号：US71631

申请日：1979-08-31

申请人： Maurice H. Hanes ,  Earl S. Schlegel

发明人： Maurice H. Hanes ,  Earl S. Schlegel

IPC分类号： H01L21/263 ,  H01L29/32 ,  H01L29/74 ,  H01L29/167

CPC分类号： H01L29/74 ,  H01L21/263 ,  H01L29/32

摘要： A four-layer semiconductor thyristor including a planar recombination region extending on both sides of a planar cathode-emitter junction.

摘要翻译： 包括在平面阴极 - 发射极结两侧延伸的平面复合区的四层半导体晶闸管。

公开(公告)号：US4270135A

公开(公告)日：1981-05-26

申请号：US103129

申请日：1979-12-13

申请人： Earl S. Schlegel ,  Maurice H. Hanes

发明人： Earl S. Schlegel ,  Maurice H. Hanes

IPC分类号： H01L31/10 ,  H01L31/0232 ,  H01L31/11 ,  H01L31/12

CPC分类号： H01L31/0232 ,  H01L31/1105

摘要： A photo-transistor includes a multi-apertured collector electrode disposed on a semiconductor collector layer. A laser diode and a light pipe are provided for each aperture such that the light from the laser is transmitted to its associated aperture via the light pipe. Means are included for sequentially pulsing each laser so as to cause a high-frequency intermittent current in the photo-transistor piece of molybdenum 88 which provides improved current flow and heat sinking for the transistor 10.

摘要翻译： 光电晶体管包括设置在半导体集电体层上的多孔集电极。 为每个孔提供激光二极管和光管，使得来自激光的光通过光管传输到其相关联的孔。 包括用于顺序地激励每个激光器以便在钼88的光电晶体管片段中产生高频间歇电流的装置，其为晶体管10提供改善的电流和散热。

公开(公告)号：US5198695A

公开(公告)日：1993-03-30

申请号：US624783

申请日：1990-12-10

申请人： Maurice H. Hanes ,  Rowland C. Clarke ,  Michael C. Driver

发明人： Maurice H. Hanes ,  Rowland C. Clarke ,  Michael C. Driver

IPC分类号： H01L23/373 ,  H01L23/498

CPC分类号： H01L23/49866 ,  H01L23/3731 ,  H01L23/49827 ,  H01L2924/0002

摘要： A bonded structure is described consisting of a semiconductor wafer, preferably gallium arsenide, soldered to a substrate material. A method for forming the structure is also described. The structure provides mechanical support and thermal conductivity for the wafer, as well as a multitude of connections through the substrate material at predetermined locations on the wafer. The substrate material and the soldering process are selected to minimize the resulting stresses in the wafer. A pattern of pads consisting of a refractory metal covered by a solder material is formed on the substrate to maintain space for excess solder in order to avoid the shorting of the individual connections on the wafer, and to control the size and location of voids in the solder upon solidification.

摘要翻译： 描述了焊接到基底材料的半导体晶片，优选砷化镓的结合结构。 还描述了用于形成结构的方法。 该结构为晶片提供机械支撑和导热性，以及在晶片上的预定位置处通过衬底材料的多个连接。 选择衬底材料和焊接工艺以最小化晶片中产生的应力。 在衬底上形成由焊料材料覆盖的难熔金属组成的衬垫图案，以保持多余焊料的空间，以避免晶片上的各个连接的短路，并且控制空隙的尺寸和位置 焊后固化。

公开(公告)号：US4207587A

公开(公告)日：1980-06-10

申请号：US887006

申请日：1978-03-16

申请人： Maurice H. Hanes ,  Lewis R. Lowry, Jr.

发明人： Maurice H. Hanes ,  Lewis R. Lowry, Jr.

IPC分类号： H01L23/04 ,  G02B6/42 ,  H01L23/051 ,  H01L29/74 ,  H01L31/0203 ,  H01L31/111 ,  H01L23/02 ,  H01L23/12 ,  H01L27/14

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4248 ,  G02B6/4295 ,  H01L23/051 ,  H01L31/1113 ,  H01L2924/0002 ,  H01L2924/16195

摘要： An hermetically sealed package for a light-triggered thyristor. The thyristor is mounted within the cavity of an insulating body. Cathode and anode pole pieces are mounted on opposite sides of and electrically coupled with the thyristor. Annular flanges are provided to form hermetical seals between the body and pole pieces. A light pipe is mounted in a radially extending slot formed through a face of one pole piece. An inner end of the light pipe is optically coupled with a light-sensitive region of the thyristor. The outer end of the light pipe is mounted within a metal sleeve which radially projects through an opening formed in a side of the body. An hermetical seal is formed between the light pipe and inner end of the sleeve by means of a glass frit in one embodiment, or by means of solder bonded between the sleeve and a metallized region formed about the light pipe in another embodiment. Another hermetical seal is formed by solder which bonds between the metal sleeve and a metallized region formed in the body about the opening. A connector fitting is mounted on an outer end of the sleeve for seating the end of a fiber optic cable which extends from a triggering light source.

摘要翻译： 用于光触发晶闸管的密封封装。 晶闸管安装在绝缘体的空腔内。 阴极和阳极极片安装在晶闸管的相对侧并与晶闸管电耦合。 提供环形凸缘以在主体和极片之间形成密封。 光管安装在通过一个极片的表面形成的径向延伸槽中。 光管的内端与晶闸管的光敏区光学耦合。 光管的外端安装在金属套筒内，该金属套筒通过形成在主体侧面的开口径向突出。 在一个实施例中，通过玻璃料在光管和套管的内端之间形成密封，或者在另一个实施例中通过在套管与围绕光管形成的金属化区域之间的焊料接合形成密封。 另一种密封由焊料形成，该焊料在金属套筒和形成在本体中的金属化区域围绕开口连接。 连接器配件安装在套筒的外端上，用于固定从触发光源延伸的光纤电缆的端部。