Conductive isostructural compounds
    1.
    再颁专利
    Conductive isostructural compounds 有权
    导电同构化合物

    公开(公告)号:USRE39640E1

    公开(公告)日:2007-05-22

    申请号:US10703026

    申请日:2003-11-06

    IPC分类号: H01L29/15

    摘要: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

    摘要翻译: 已经制备了具有以下通式的同构结构化合物的家族:具有下式的通式为:N 2 N 2 + m + 。 这些化合物具有NaCl晶格型结构以及低导热性和可控导电性。 此外,可以通过改变n和m的值来控制电性能。 这些同构化合物可用于诸如检测器,激光器和光伏电池的半导体应用。 这些化合物还具有增强的热电性能,使得它们成为用于制造热电装置的优异的半导体材料。

    Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements
    2.
    发明授权
    Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements 有权
    Pb-Ge-Te化合物用于热电发电机或珀耳帖排列

    公开(公告)号:US07326851B2

    公开(公告)日:2008-02-05

    申请号:US10411320

    申请日:2003-04-11

    IPC分类号: H01L35/16

    CPC分类号: H01L35/16 H01L35/22

    摘要: A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te  (I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 μV/K at a temperature of 25° C.

    摘要翻译: 一种热电活性的p型或n型导电半导体材料由通式(I)的三元化合物构成,即:在线式描述=“In-line Formulas”end =“lead”→>(Pb ,x值从0.16到 0.5,其中0至10重量%的三元化合物可以被其它金属或金属化合物代替,其中半导体材料在25℃的温度下具有至少±200μV/ K的塞贝克系数