摘要:
A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.
摘要翻译:已经制备了具有以下通式的同构结构化合物的家族:具有下式的通式为:N 2 N 2 + m + 。 这些化合物具有NaCl晶格型结构以及低导热性和可控导电性。 此外,可以通过改变n和m的值来控制电性能。 这些同构化合物可用于诸如检测器,激光器和光伏电池的半导体应用。 这些化合物还具有增强的热电性能,使得它们成为用于制造热电装置的优异的半导体材料。
摘要:
A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te (I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 μV/K at a temperature of 25° C.
摘要:
The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1−x(Sn2±ySb2±zTe5)x (I) with 0.0001≦x≦0.5, 0≦y
摘要翻译:本发明涉及由通式(I)的化合物(PbTe)1-x(Sn2±ySb2±zTe5)x(I)与0.0001&nlE; x&nlE; 0.5的化合物构成的热电活性p型或n导电半导体材料。 ,0&nlE; y <2和0&nlE; z <2,其中0至10重量%的化合物可以被其它金属或金属化合物代替,其中半导体材料具有至少| S |≥60μV的塞贝克系数 / K,温度25℃,导电率至少为150S / cm,功率因数至少为5μW/(cm·K2)),还涉及制备这种半导体材料的方法 对于包含它们的发电机和珀尔帖安排。
摘要:
The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1-x(Sn2±ySb2±zTe5)x (I) with 0.0001≦x≦0.5, 0≦y
摘要翻译:本发明涉及由通式(I)的化合物<?in-line-formula description =“In-Line Formulas”end =“lead”→(PbTe)构成的热电活性p型或n导电半导体材料 )1-x(Sn 2 + y 2 Sb 2 + z 5)5 (I)<?in-line-formula description =“In-line Formulas”end =“tail”?>与0.0001 <= x <= 0.5,0 <= y <2和0 <= z <2, 其中0至10重量%的化合物可以被其它金属或金属化合物代替,其中该半导体材料在25℃的温度下具有至少≥60μV/ K的塞贝克系数,并且电气 至少150S / cm的电导率和至少5μW/(cm·K 2)的功率因数进一步涉及制备这种半导体材料的方法,以及发电机和 佩尔蒂耶安排包含它们。