摘要:
A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.
摘要翻译:已经制备了具有以下通式的同构结构化合物的家族:具有下式的通式为:N 2 N 2 + m + 。 这些化合物具有NaCl晶格型结构以及低导热性和可控导电性。 此外,可以通过改变n和m的值来控制电性能。 这些同构化合物可用于诸如检测器,激光器和光伏电池的半导体应用。 这些化合物还具有增强的热电性能,使得它们成为用于制造热电装置的优异的半导体材料。
摘要:
A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.
摘要:
A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te (I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 μV/K at a temperature of 25° C.
摘要:
The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1−x(Sn2±ySb2±zTe5)x (I) with 0.0001≦x≦0.5, 0≦y
摘要翻译:本发明涉及由通式(I)的化合物(PbTe)1-x(Sn2±ySb2±zTe5)x(I)与0.0001&nlE; x&nlE; 0.5的化合物构成的热电活性p型或n导电半导体材料。 ,0&nlE; y <2和0&nlE; z <2,其中0至10重量%的化合物可以被其它金属或金属化合物代替,其中半导体材料具有至少| S |≥60μV的塞贝克系数 / K,温度25℃,导电率至少为150S / cm,功率因数至少为5μW/(cm·K2)),还涉及制备这种半导体材料的方法 对于包含它们的发电机和珀尔帖安排。
摘要:
A series of alkali metal bismuth or bismuth and antimony, antimony chalcogenides (Te or S) are described. The compounds have a unique combination electrical properties.
摘要:
A process for producing an optical glass fiber from crystal-glass phase material. In one embodiment, the process includes the step of providing a molten crystal-glass phase material in a container, wherein the temperature of the molten crystal-glass phase material is at or above the melting temperature of the molten crystal-glass phase material, Tm, to allow the molten crystal-glass phase material is in liquid phase. The process further includes the step of cooling the molten crystal-glass phase material such that the temperature of the molten crystal-glass phase material, T1, is reduced to below Tm to cause the molten crystal-glass phase material to be changed from the liquid phase to a viscous melt. Moreover, the process has the step of pulling a glass fiber of the crystal-glass phase material from the viscous melt, wherein T1 satisfies the following relationship: Tv
摘要:
A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.
摘要:
Composites comprising a continuous matrix formed from compounds having a rock salt structure (represented by the structure “MQ”) and inclusions comprising chalcogenide compounds having a rock salt structure (represented by the structure “AB”) are provided. Composites having the structure MQ-ABC2, where MQ represents a matrix material and ABC2 represents inclusions comprising a chalcogenide dispersed in the matrix material are also provided.
摘要:
Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M′4Qx]n, M4[M′2Qy]n, M4[M′Qx]n, M3[M″Qx]n, or Me2[M′″Qx]n, where M is a divalent, trivalent, or tetravalent metal ion; M′, M″, and M′″ are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.
摘要:
Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M′4Qx]n, M4[M′2Qy]n, M4[M′Qx]n, M3[M″Qx]n, or Me2[M′″Qx]n, where M is a divalent, trivalent, or terravalent metal ion; M′, M″, and M′″ are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.