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    Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements
    2.
    发明授权
    Pb-Ge-Te-compounds for thermoelectric generators or Peltier arrangements 有权
    Pb-Ge-Te化合物用于热电发电机或珀耳帖排列

    公开(公告)号：US07326851B2

    公开(公告)日：2008-02-05

    申请号：US10411320

    申请日：2003-04-11

    申请人： Hans-Josef Sterzel ,  Klaus Kühling ,  Mercouri G. Kanatzidis ,  Duck-Young Chung

    发明人： Hans-Josef Sterzel ,  Klaus Kühling ,  Mercouri G. Kanatzidis ,  Duck-Young Chung

    IPC分类号： H01L35/16

    CPC分类号： H01L35/16 ,  H01L35/22

    摘要： A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te  (I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 μV/K at a temperature of 25° C.

    摘要翻译： 一种热电活性的p型或n型导电半导体材料由通式（I）的三元化合物构成，即：在线式描述=“In-line Formulas”end =“lead”→>（Pb ，x值从0.16到 0.5，其中0至10重量％的三元化合物可以被其它金属或金属化合物代替，其中半导体材料在25℃的温度下具有至少±200μV/ K的塞贝克系数

    Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material
    6.
    发明申请
    Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material 审中-公开
    包含半导体光伏活性材料的光伏电池

    公开(公告)号：US20080163928A1

    公开(公告)日：2008-07-10

    申请号：US11817167

    申请日：2006-03-07

    申请人： Hans-Josef Sterzel

    发明人： Hans-Josef Sterzel

    IPC分类号： H01L31/0296 ,  H01L31/04 ,  C23C14/14 ,  H01L31/032 ,  H01L21/00 ,  C23C14/34 ,  C25D7/12

    CPC分类号： H01L31/18 ,  H01L31/02963 ,  H01L31/0321 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

    摘要： The invention relates to a photovoltaic cell and to a process for producing a photovoltaic cell comprising a photovoltaically active semiconductor material of the formula (I) or (II): ZnTe   (I) Zn1-xMnxTe   (II) where x is from 0.01 to 0.7, wherein the photovoltaically active semiconductor material comprises a metal halide comprising a metal selected from the group consisting of germanium, tin, antimony, bismuth and copper and a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine

    摘要翻译： 本发明涉及一种光伏电池和一种用于生产包括式（I）或（II）的光伏活性半导体材料的光伏电池的方法：<？in-line-formula description =“In-line Formulas”end = “lead”？> ZnTe（I）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”Zn 1-x Mn x Te（II）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中 x为0.01至0.7，其中所述光伏活性半导体材料包括金属卤化物，其包含选自锗，锡，锑，铋和铜的金属和选自氟，氯，溴和 碘

    Thermoelectric Material Contact
    7.
    发明申请
    Thermoelectric Material Contact 审中-公开
    热电材料接触

    公开(公告)号：US20080060693A1

    公开(公告)日：2008-03-13

    申请号：US11576103

    申请日：2005-09-24

    申请人： Hans-Josef Sterzel

    发明人： Hans-Josef Sterzel

    IPC分类号： H01L35/08 ,  H01L21/00

    CPC分类号： H01L35/08

    摘要： The invention relates to the thermally stable contacting of semiconductive alloys for use in thermoelectric generators and Peltier arrangements by means of soldering, and to processes for producing thermoelectric modules using a barrier layer composed of borides, nitrides, carbides, phosphides and/or silicides.

    摘要翻译： 本发明涉及通过焊接用于热电发电机和珀耳帖排列的半导体合金的热稳定接触，以及使用由硼化物，氮化物，碳化物，磷化物和/或硅化物组成的阻挡层制造热电模块的方法。

    Photovoltaically active materials and cells containing them
    10.
    发明授权
    Photovoltaically active materials and cells containing them 失效

    公开(公告)号：US07026543B2

    公开(公告)日：2006-04-11

    申请号：US10227793

    申请日：2002-08-27

    申请人： Hans-Josef Sterzel ,  Klaus Kühling

    发明人： Hans-Josef Sterzel ,  Klaus Kühling

    IPC分类号： H01L31/00 ,  H01L31/0248 ,  H01L31/0264

    CPC分类号： H01L31/032

    摘要： In a photovoltaic cell having a photovoltaically active semiconductor material constituted by a plurality of metals or metal oxides, the photovoltaically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I) MexSAySBz  (I) with Me=Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag, SA, SB=B, C, Si, Ge, Sb, Se or Te, where SA and SB respectively come from different groups of the periodic table, x, y, z are independent of one another and can take values from 0.01 to 1, and where the proportion by weight of SA and SB together is no more than 30%, expressed in terms of the total semiconductor material, or a mixed oxide of the general formula (II) [ ( CaO ) u · ( SrO ) v · ( BaO ) w · ( 1 / 2 ⁢ Bi 2 ⁢ O 3 ) x ] f · 2 ⁢ n + a 2 · ( { k } · Me n ⁢ O n 2 ⁢ { 2 - k } · Me n + a ⁢ O n + a 2 ) ( II ) with Me=Fe, Cu, V, Mn, Sn, Ti, Mo, W n=integer from 1 to 6, a=1 or 2, f=number from 0.2 to 5, k=number from 0.01 to 2, u+v+w+x=1.