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公开(公告)号：US11967662B2
公开(公告)日：2024-04-23
申请号：US18164779
申请日：2023-02-06
发明人： Jun Zhao , Marcel Koenig
IPC分类号： H01L31/068 , H01L31/0747 , H01L31/20
CPC分类号： H01L31/0682 , H01L31/0747 , H01L31/202
摘要： A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.
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2.发明授权公开(公告)号：US11024755B2
公开(公告)日：2021-06-01
申请号：US16092850
申请日：2017-04-07
发明人： Giuseppe Citarella , Hans-Peter Sperlich , Gunnar Koehler , Frank Wuensch , Detlef Sontag , Heiko Mehlich , Marcel Koenig , Pierre Papet
IPC分类号： H01L31/18 , H01L31/0747 , H01L31/0352 , H01L31/068 , H01L31/105 , H01L31/0216 , H01L31/0224 , H01L31/0376 , H01L31/20 , C23C16/34 , C23C16/40
摘要： A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.
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公开(公告)号：US20220271180A1
公开(公告)日：2022-08-25
申请号：US17633974
申请日：2020-07-31
发明人： Jun Zhao , Marcel Koenig
IPC分类号： H01L31/068 , H01L31/0747 , H01L31/20
摘要： A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.
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公开(公告)号：US20240128392A1
公开(公告)日：2024-04-18
申请号：US18397216
申请日：2023-12-27
发明人： Jun Zhao , Marcel Koenig
IPC分类号： H01L31/068 , H01L31/0747 , H01L31/20
CPC分类号： H01L31/0682 , H01L31/0747 , H01L31/202
摘要： A backside emitter solar cell structure having a heterojunction. On one side edge of the backside emitter solar cell structure having the heterojunction, on an edge region of a crystalline semiconductor substrate of the backside emitter solar cell structure having the heterojunction having a doping of a first conductivity type, there is a layer sequence with a double intrinsic layer formed.
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5.发明公开公开(公告)号：US20230178672A1
公开(公告)日：2023-06-08
申请号：US18164779
申请日：2023-02-06
发明人： Jun Zhao , Marcel Koenig
IPC分类号： H01L31/068 , H01L31/0747 , H01L31/20
CPC分类号： H01L31/0682 , H01L31/0747 , H01L31/202
摘要： A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.
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公开(公告)号：US11605749B2
公开(公告)日：2023-03-14
申请号：US17633974
申请日：2020-07-31
发明人： Jun Zhao , Marcel Koenig
IPC分类号： H01L31/068 , H01L31/0747 , H01L31/20
摘要： A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.
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