TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES
    1.
    发明申请
    TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES 有权
    自组装自对准结构的音调反演

    公开(公告)号:US20140353800A1

    公开(公告)日:2014-12-04

    申请号:US13603869

    申请日:2012-09-05

    IPC分类号: H01L21/033 H01L21/308

    摘要: A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

    摘要翻译: 在衬底上设置有机平面化层(OPL)和模板层的叠层。 将模板层图案化以引起随后沉积的共聚物层的自组装。 共聚物层被沉积并退火以形成相分离的共聚物嵌段。 通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。 原始图案通过各向异性蚀刻转移到OPL中,并且去除第一相分离的聚合物和模板层。 在包含原始图案的图案化OPL上沉积旋涂电介质(SOD)材料层,以形成填充图案化OPL内的沟槽的SOD部分。 图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。

    METHODS OF DIRECTED SELF-ASSEMBLY, AND LAYERED STRUCTURES FORMED THEREFROM
    2.
    发明申请
    METHODS OF DIRECTED SELF-ASSEMBLY, AND LAYERED STRUCTURES FORMED THEREFROM 有权
    方向自组装方法及其形成的层状结构

    公开(公告)号:US20110147984A1

    公开(公告)日:2011-06-23

    申请号:US12642018

    申请日:2009-12-18

    IPC分类号: B29C39/00 G03F7/20

    摘要: A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.

    摘要翻译: 形成包括自组装材料的层状结构的方法包括:在基底上设置非交联光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 可选地加热曝光的光致抗蚀剂层; 在第一显影工艺中用含水碱性显影剂显影曝光的光致抗蚀剂层,形成初始图案化的光致抗蚀剂层; 以光学,光学和/或化学方式处理初始图案化的光致抗蚀剂层,从而形成经处理的图案化的光刻胶层,其包含设置在第一衬底表面上的非交联处理的光致抗蚀剂; 在经处理​​的图案化光刻胶层上浇铸取向控制材料在第一溶剂中的溶液,并除去第一溶剂,形成取向控制层; 加热所述取向控制层以有效地将所述取向控制材料的一部分结合到第二基板表面; 在第二显影过程中除去至少一部分经处理的光致抗蚀剂和任选的任何未结合的取向控制材料,从而形成用于自组装的预图案; 可选地加热预图案; 将能够自组装的溶解在第二溶剂中的材料的溶液浇铸在预图案上并除去第二溶剂; 并且允许铸造材料通过任选的加热和/或退火自组装,从而形成包括自组装材料的层状结构。