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公开(公告)号：US08921030B2
公开(公告)日：2014-12-30
申请号：US13603869
申请日：2012-09-05
IPC分类号： G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
摘要翻译： 在衬底上设置有机平面化层（OPL）和模板层的叠层。 将模板层图案化以引起随后沉积的共聚物层的自组装。 共聚物层被沉积并退火以形成相分离的共聚物嵌段。 通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。 原始图案通过各向异性蚀刻转移到OPL中，并且去除第一相分离的聚合物和模板层。 在包含原始图案的图案化OPL上沉积旋涂电介质（SOD）材料层，以形成填充图案化OPL内的沟槽的SOD部分。 图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。
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公开(公告)号：US20140353800A1
公开(公告)日：2014-12-04
申请号：US13603869
申请日：2012-09-05
IPC分类号： H01L21/033 , H01L21/308
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
摘要翻译： 在衬底上设置有机平面化层（OPL）和模板层的叠层。 将模板层图案化以引起随后沉积的共聚物层的自组装。 共聚物层被沉积并退火以形成相分离的共聚物嵌段。 通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。 原始图案通过各向异性蚀刻转移到OPL中，并且去除第一相分离的聚合物和模板层。 在包含原始图案的图案化OPL上沉积旋涂电介质（SOD）材料层，以形成填充图案化OPL内的沟槽的SOD部分。 图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。
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公开(公告)号：US20130143769A1
公开(公告)日：2013-06-06
申请号：US13310194
申请日：2011-12-02
申请人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
发明人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
CPC分类号： G01N33/531 , B82Y30/00 , B82Y40/00 , C01B32/194 , G01N33/5308 , G01N33/54373 , G01N33/54393 , G01N33/551 , G01N2400/00 , H01L21/30
摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括以周期性方式在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子，钝化石墨烯纳米粒子的多个孔中的每一个的边缘以允许石墨烯纳米粒子的官能化，并使 石墨烯纳米粒子的多个孔的每个的钝化边缘具有促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物，允许靶分子结合受体，导致 将转移到石墨烯纳米片上的电荷以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。
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公开(公告)号：US08771929B2
公开(公告)日：2014-07-08
申请号：US13587088
申请日：2012-08-16
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
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公开(公告)号：US20140148012A1
公开(公告)日：2014-05-29
申请号：US13587088
申请日：2012-08-16
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
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公开(公告)号：US09102540B2
公开(公告)日：2015-08-11
申请号：US13310194
申请日：2011-12-02
申请人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
发明人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
IPC分类号： B82Y30/00 , C01B31/04 , B82Y40/00 , G01N33/543
CPC分类号： G01N33/531 , B82Y30/00 , B82Y40/00 , C01B32/194 , G01N33/5308 , G01N33/54373 , G01N33/54393 , G01N33/551 , G01N2400/00 , H01L21/30
摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括以周期性方式在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子，钝化石墨烯纳米粒子的多个孔中的每一个的边缘以允许石墨烯纳米粒子的官能化，并使 石墨烯纳米粒子的多个孔的每个的钝化边缘具有促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物，允许靶分子结合受体，导致 将转移到石墨烯纳米片上的电荷以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。
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