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1.发明授权Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor 有权基于旋转力矩的存储器件，具有用非线性分流电阻调制的读和写电流路径公开(公告)号：US08927301B2
公开(公告)日：2015-01-06
申请号：US13552033
申请日：2012-07-18
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/24 , H01L43/08 , H01L45/04 , H01L45/145
摘要： A fabrication method includes forming a spin-polarizing layer, a spin transport layer on the spin polarizing layer on a substrate, a free layer magnet on the spin transport layer, a non-magnetic layer on the spin polarizing layer, a reference layer on the non-magnetic layer, and a hard mask layer on the reference layer, etching the hard mask layer and forming a read portion including the reference layer, the nonmagnetic layer and the free layer magnet, forming a nonlinear resistor layer on surfaces of the spin transport layer, the spacers, and the hard mask layer, etching the nonlinear resistor layer, the spin transport layer, and the spin polarizing layer and forming a write portion including the spin transport layer and the spin polarizing layer, forming an interlevel dielectric layer, forming a trench, exposing an upper surface of the reference layer of the read and write portions.
摘要翻译： 一种制造方法包括在基底上的自旋偏振层上形成自旋极化层，自旋传输层，自旋传输层上的自由层磁体，自旋极化层上的非磁性层， 非磁性层和硬掩模层，蚀刻硬掩模层并形成包括参考层，非磁性层和自由层磁体的读取部分，在自旋输送的表面上形成非线性电阻层 蚀刻非线性电阻层，自旋传输层和自旋偏振层，形成包括自旋传输层和自旋极化层的写入部分，形成层间电介质层，形成层间绝缘层 沟槽，暴露读取和写入部分的参考层的上表面。
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2.发明申请SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR 有权具有读取和写入电流调制的非线性分流电阻的基于转子的基于记忆体的存储器件公开(公告)号：US20120288964A1
公开(公告)日：2012-11-15
申请号：US13552033
申请日：2012-07-18
IPC分类号： H01L21/8246
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/24 , H01L43/08 , H01L45/04 , H01L45/145
摘要： A fabrication method includes forming a spin-polarizing layer, a spin transport layer on the spin polarizing layer on a substrate, a free layer magnet on the spin transport layer, a non-magnetic layer on the spin polarizing layer, a reference layer on the non-magnetic layer, and a hard mask layer on the reference layer, etching the hard mask layer and forming a read portion including the reference layer, the nonmagnetic layer and the free layer magnet, forming a nonlinear resistor layer on surfaces of the spin transport layer, the spacers, and the hard mask layer, etching the nonlinear resistor layer, the spin transport layer, and the spin polarizing layer and forming a write portion including the spin transport layer and the spin polarizing layer, forming an interlevel dielectric layer, forming a trench, exposing an upper surface of the reference layer of the read and write portions.
摘要翻译： 一种制造方法包括在基底上的自旋偏振层上形成自旋极化层，自旋传输层，自旋传输层上的自由层磁体，自旋极化层上的非磁性层， 非磁性层和硬掩模层，蚀刻硬掩模层并形成包括参考层，非磁性层和自由层磁体的读取部分，在自旋输送的表面上形成非线性电阻层 蚀刻非线性电阻层，自旋传输层和自旋偏振层，形成包括自旋传输层和自旋极化层的写入部分，形成层间电介质层，形成层间绝缘层 沟槽，暴露读取和写入部分的参考层的上表面。
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3.发明授权Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor 有权基于旋转力矩的存储器件，具有用非线性分流电阻调制的读和写电流路径公开(公告)号：US08270208B2
公开(公告)日：2012-09-18
申请号：US12701867
申请日：2010-02-08
IPC分类号： G11C11/00
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/24 , H01L43/08 , H01L45/04 , H01L45/145
摘要： A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.
摘要翻译： 基于自旋扭矩的存储器件包括：写入部分，其包括固定铁磁自旋极化层，具有形成在固定铁磁自旋偏振层上方的自旋存储区域的自旋传输层。 存储器件还包括与自旋传输层电接触的读取部分。 读取部分包括自由层磁体，读取非磁性层和参考层。 存储器件还包括覆盖读取部分的金属接触区域和形成在自旋传输层的上表面与金属接触区域之间的非线性电阻，并且根据所施加的电压调制写入和读取电流路径，从而产生不同的电流 写入和读取过程的路径。
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4.发明申请SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR 有权具有读取和写入电流调制的非线性分流电阻的基于转子的基于记忆体的存储器件公开(公告)号：US20110194341A1
公开(公告)日：2011-08-11
申请号：US12701867
申请日：2010-02-08
CPC分类号： H01L27/224 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/24 , H01L43/08 , H01L45/04 , H01L45/145
摘要： A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.
摘要翻译： 基于自旋扭矩的存储器件包括：写入部分，其包括固定铁磁自旋极化层，具有形成在固定铁磁自旋偏振层上方的自旋存储区域的自旋传输层。 存储器件还包括与自旋传输层电接触的读取部分。 读取部分包括自由层磁体，读取非磁性层和参考层。 存储器件还包括覆盖读取部分的金属接触区域和形成在自旋传输层的上表面与金属接触区域之间的非线性电阻，并且根据所施加的电压调制写入和读取电流路径，从而产生不同的电流 写入和读取过程的路径。
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公开(公告)号：US08928100B2
公开(公告)日：2015-01-06
申请号：US13168477
申请日：2011-06-24
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L43/08
摘要： Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.
摘要翻译： 实施例针对STT MRAM设备。 STT MRAM器件的一个实施例包括参考层，隧道势垒层，自由层和一个或多个导电通孔。 参考层被配置为具有固定的磁矩。 此外，隧道势垒层被配置为使得电子能够通过隧道势垒层在参考层和自由层之间隧穿。 自由层设置在隧道势垒层之下，并被配置为具有用于存储数据的适应性磁矩。 导电通孔设置在自由层下方并连接到电极。 此外，导电通孔的宽度小于自由层的宽度，使得用于存储自由层中的数据的活动STT区域的宽度由导电通孔的宽度限定。
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6.发明授权Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器公开(公告)号：US08852677B2
公开(公告)日：2014-10-07
申请号：US13566132
申请日：2012-08-03
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译： 一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。
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7.发明授权Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器公开(公告)号：US08852762B2
公开(公告)日：2014-10-07
申请号：US13562868
申请日：2012-07-31
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译： 合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层 第三钌层的厚度为约0埃至18埃。
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8.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器公开(公告)号：US20140038309A1
公开(公告)日：2014-02-06
申请号：US13566132
申请日：2012-08-03
IPC分类号： H01L43/10
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译： 一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。
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9.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器公开(公告)号：US20140037990A1
公开(公告)日：2014-02-06
申请号：US13562868
申请日：2012-07-31
IPC分类号： G11B5/66
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译： 合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层 第三钌层的厚度为约0埃至18埃。
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10.发明申请MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER 审中-公开磁铁隧道与铁矿石层之间的自由层和隧道障碍公开(公告)号：US20130005052A1
公开(公告)日：2013-01-03
申请号：US13604236
申请日：2012-09-05
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.
摘要翻译： 用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 形成在自由层上的铁（Fe）除尘层; 形成在除尘层上的绝缘隧道屏障; 以及具有不变磁化方向的磁性固定层，邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间; 其中自由层和固定层具有垂直的磁各向异性并且通过隧道势垒磁耦合。
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