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1.发明授权Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器公开(公告)号：US08852762B2
公开(公告)日：2014-10-07
申请号：US13562868
申请日：2012-07-31
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译： 合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层 第三钌层的厚度为约0埃至18埃。
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2.发明授权Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器公开(公告)号：US08852677B2
公开(公告)日：2014-10-07
申请号：US13566132
申请日：2012-08-03
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译： 一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。
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3.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器公开(公告)号：US20140038309A1
公开(公告)日：2014-02-06
申请号：US13566132
申请日：2012-08-03
IPC分类号： H01L43/10
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译： 一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。
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4.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器公开(公告)号：US20140037990A1
公开(公告)日：2014-02-06
申请号：US13562868
申请日：2012-07-31
IPC分类号： G11B5/66
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译： 合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层 第三钌层的厚度为约0埃至18埃。
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公开(公告)号：US08456895B2
公开(公告)日：2013-06-04
申请号：US13100032
申请日：2011-05-03
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译： 提供了双向写入的机制。 结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。 高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。 自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。 当磁化不稳定时，施加电压以改变自由层的磁化。 电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。
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公开(公告)号：US20120281467A1
公开(公告)日：2012-11-08
申请号：US13100032
申请日：2011-05-03
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译： 提供了双向写入的机制。 结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。 高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。 自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。 当磁化不稳定时，施加电压以改变自由层的磁化。 电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。
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7.发明授权Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices 有权制造磁场集中器作为微电子器件中导线周围的衬垫的方法公开(公告)号：US07033881B2
公开(公告)日：2006-04-25
申请号：US10710044
申请日：2004-06-15
IPC分类号： H01L21/8242
CPC分类号： H01L43/12 , G11C11/15 , G11C11/16 , H01L27/222
摘要： In an MRAM cell, the writing current is encased in a low-reluctance material that is treated in one of several ways to render the material closest to the storage element ineffective to carry magnetic flux, thereby establishing a horseshoe-shaped cross section that focuses the flux toward the storage element.
摘要翻译： 在MRAM单元中，写入电流被封装在低磁阻材料中，其以几种方式之一进行处理，以使得最靠近存储元件的材料无效地携带磁通量，从而建立了马蹄形横截面，其将 向储存元件的通量。
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公开(公告)号：US09015927B2
公开(公告)日：2015-04-28
申请号：US13566130
申请日：2012-08-03
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a reference layer on a first tantalum layer and including depositing a first cobalt iron boron layer, depositing a second cobalt iron boron layer on the first cobalt iron boron layer, depositing a second Ta layer on the second cobalt iron boron layer, depositing a magnesium oxide spacer layer on the reference layer and depositing a cap layer on the magnesium oxide spacer layer.
摘要翻译： 一种用于制造合成反铁磁性器件的方法，包括在第一钽层上沉积参考层，并且包括沉积第一钴铁硼层，在第一钴铁硼层上沉积第二钴铁硼层，在第一钴铁硼层上沉积第二Ta层 第二钴铁硼层，在参考层上沉积氧化镁间隔层并在氧化镁间隔层上沉积覆盖层。
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9.发明申请Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit 审中-公开利用侧壁间隔件在集成电路中形成磁隧道结公开(公告)号：US20080211055A1
公开(公告)日：2008-09-04
申请号：US12120915
申请日：2008-05-15
申请人： Solomon Assefa , Michael C. Gaidis , Sivananda Kanakasabapathy , John P. Hummel , David W. Abraham
发明人： Solomon Assefa , Michael C. Gaidis , Sivananda Kanakasabapathy , John P. Hummel , David W. Abraham
CPC分类号： H01L43/12 , H01L27/222
摘要： Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.
摘要翻译： 描述了在集成电路中可靠且可重复地形成磁隧道结的新方法。 根据本发明的方面，在膜叠层的处理期间利用侧壁间隔物特征。 有利地，这些侧壁间隔物特征产生锥形掩蔽特征，其有助于避免在MTJ膜叠层的蚀刻期间的副产物再沉积，从而提高工艺产率。 此外，侧壁间隔物特征可以在随后的处理步骤期间用作包封层，并且可以用作垂直接触以进行更高级别的金属化。
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10.发明授权Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory 有权图案化用于磁阻随机存取存储器的磁性隧道结叠层的方法公开(公告)号：US07211446B2
公开(公告)日：2007-05-01
申请号：US10709999
申请日：2004-06-11
申请人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
发明人： Michael C. Gaidis , David W. Abraham , Stephen L. Brown , Arunava Gupta , Chanro Park , Wolfgang Raberg
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/12
摘要： A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
摘要翻译： 提供了一种图案化磁性隧道结（MTJ）堆叠的方法。 根据这种方法，形成具有自由层，钉扎层和设置在自由层和被钉扎层之间的隧道势垒层的MTJ堆叠。 MTJ堆叠的第一区域被屏蔽，而MTJ的自由层在第二区域中被暴露。 然后，自由层在第二区域中被电气地且磁性地不起作用。
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