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公开(公告)号：US20130164742A1
公开(公告)日：2013-06-27
申请号：US13470919
申请日：2012-05-14
IPC分类号： C12Q1/68
CPC分类号： C12Q1/68 , B01L7/52 , B01L2300/0645 , B01L2300/1822 , B01L2300/1894 , B01L2400/0424 , B01L2400/0427 , C12Q1/6869 , G01N27/44791 , Y10T436/25 , C12Q2565/629 , C12Q2565/301 , C12Q2563/149
摘要： The present invention relates to droplet-based pyrosequencing including a method of identifying a base at a target position in a sample nucleic acid. The method includes: (a) providing a droplet microactuator including a first droplet including a sample nucleic acid immobilized on a bead; and (b) on the droplet microactuator: (i) contacting the first droplet with one or more reagent droplets to yield a second droplet, wherein the one or more reagent droplets include reagents for extending a double stranded portion of the sample nucleic acid by incorporating a nucleotide at the target position; (ii) splitting the second droplet to yield a third droplet including the bead and a fourth droplet lacking the bead; and (iii) assaying the third droplet to determine whether the nucleotide was incorporated at the target position.
摘要翻译： 本发明涉及基于液滴的焦磷酸测序，包括鉴定样品核酸中目标位置的碱基的方法。 该方法包括：（a）提供包括包含固定在珠粒上的样品核酸的第一液滴的液滴微致动器; 和（b）在液滴微致动器上：（i）使第一液滴与一个或多个试剂液滴接触以产生第二液滴，其中所述一个或多个试剂液滴包括用于通过掺入来扩展样品核酸的双链部分的试剂 目标位置的核苷酸; （ii）分裂第二液滴以产生包含珠粒的第三液滴和不含珠粒的第四液滴; 和（iii）测定第三液滴以确定核苷酸是否并入目标位置。
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公开(公告)号：US09243282B2
公开(公告)日：2016-01-26
申请号：US13470919
申请日：2012-05-14
IPC分类号： C12Q1/68 , C12P19/34 , G01N21/00 , G01N27/447
CPC分类号： C12Q1/68 , B01L7/52 , B01L2300/0645 , B01L2300/1822 , B01L2300/1894 , B01L2400/0424 , B01L2400/0427 , C12Q1/6869 , G01N27/44791 , Y10T436/25 , C12Q2565/629 , C12Q2565/301 , C12Q2563/149
摘要： The present invention relates to droplet-based pyrosequencing including a method of identifying a base at a target position in a sample nucleic acid. The method includes: (a) providing a droplet microactuator including a first droplet including a sample nucleic acid immobilized on a bead; and (b) on the droplet microactuator: (i) contacting the first droplet with one or more reagent droplets to yield a second droplet, wherein the one or more reagent droplets include reagents for extending a double stranded portion of the sample nucleic acid by incorporating a nucleotide at the target position; (ii) splitting the second droplet to yield a third droplet including the bead and a fourth droplet lacking the bead; and (iii) assaying the third droplet to determine whether the nucleotide was incorporated at the target position.
摘要翻译： 本发明涉及基于液滴的焦磷酸测序，包括鉴定样品核酸中目标位置的碱基的方法。 该方法包括：（a）提供包括包含固定在珠粒上的样品核酸的第一液滴的液滴微致动器; 和（b）在所述液滴微致动器上：（i）使所述第一液滴与一个或多个试剂液滴接触以产生第二液滴，其中所述一个或多个试剂液滴包括用于通过掺入来扩展样品核酸的双链部分的试剂 目标位置的核苷酸; （ii）分裂第二液滴以产生包含珠粒的第三液滴和不含珠粒的第四液滴; 和（iii）测定第三液滴以确定核苷酸是否并入目标位置。
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公开(公告)号：USD385304S
公开(公告)日：1997-10-21
申请号：US59781
申请日：1996-09-16
申请人： Peter B. Griffin
设计人： Peter B. Griffin
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公开(公告)号：US20090176353A1
公开(公告)日：2009-07-09
申请号：US12392261
申请日：2009-02-25
申请人： James D. Plummer , Peter B. Griffin , Jia Feng , Shu-Lu Chen
发明人： James D. Plummer , Peter B. Griffin , Jia Feng , Shu-Lu Chen
IPC分类号： H01L21/208 , H01L21/20
CPC分类号： H01L29/66742 , B82Y10/00 , H01L21/02433 , H01L21/02521 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02675 , H01L29/0665 , H01L29/0673 , H01L29/66795 , H01L29/785 , H01L29/78681 , H01L29/78684
摘要： Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material, such as Ge or a semiconductor compound, is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location. The relatively small physical opening and/or the change in crystalline front direction may be implemented, for example, using a material that is substantially unreactive with the liquid-phase material to contain the crystalline growth.
摘要翻译： 使用液相结晶方法实现单晶生长，其涉及通常与晶格失配材料的液相晶体生长相关的缺陷的抑制。 根据一个示例性实施例，半导体器件结构包括基本单晶区域。 使用涉及促进单晶生长的缺陷抑制的方法，使诸如Ge或半导体化合物的液相材料结晶形成单晶区域。 在一些情况下，该缺陷抑制包括使用晶体生长前沿传播的相对小的物理开口来减少和/或消除缺陷。 在其他情况下，该缺陷抑制涉及相对于结晶种子位置导致结晶前沿方向的变化。 可以例如使用与液相材料基本上不反应的材料以包含结晶生长来实现相对较小的物理开口和/或晶体前端方向的变化。
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公开(公告)号：USD407749S
公开(公告)日：1999-04-06
申请号：US77798
申请日：1997-10-14
申请人： Peter B. Griffin
设计人： Peter B. Griffin
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公开(公告)号：US07749872B2
公开(公告)日：2010-07-06
申请号：US12392261
申请日：2009-02-25
申请人： James D. Plummer , Peter B. Griffin , Jia Feng , Shu-Lu Chen
发明人： James D. Plummer , Peter B. Griffin , Jia Feng , Shu-Lu Chen
IPC分类号： H01L21/20
CPC分类号： H01L29/66742 , B82Y10/00 , H01L21/02433 , H01L21/02521 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/02675 , H01L29/0665 , H01L29/0673 , H01L29/66795 , H01L29/785 , H01L29/78681 , H01L29/78684
摘要： Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material, such as Ge or a semiconductor compound, is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location. The relatively small physical opening and/or the change in crystalline front direction may be implemented, for example, using a material that is substantially unreactive with the liquid-phase material to contain the crystalline growth.
摘要翻译： 使用液相结晶方法实现单晶生长，其涉及通常与晶格失配材料的液相晶体生长相关的缺陷的抑制。 根据一个示例性实施例，半导体器件结构包括基本单晶区域。 使用涉及促进单晶生长的缺陷抑制的方法，使诸如Ge或半导体化合物的液相材料结晶形成单晶区域。 在一些情况下，该缺陷抑制包括使用晶体生长前沿传播的相对小的物理开口来减少和/或消除缺陷。 在其他情况下，该缺陷抑制涉及相对于结晶种子位置导致结晶前沿方向的变化。 可以例如使用与液相材料基本上不反应的材料以包含结晶生长来实现相对较小的物理开口和/或晶体前端方向的变化。
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