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    Methods of conducting wafer level burn-in of electronic devices
    1.
    发明申请
    Methods of conducting wafer level burn-in of electronic devices 有权
    进行电子器件晶圆级老化的方法

    公开(公告)号：US20060097337A1

    公开(公告)日：2006-05-11

    申请号：US10486661

    申请日：2002-08-12

    申请人： Michael Haji-Sheikh ,  James Biard ,  Simon Rabinovich ,  James Guenter ,  Bobby Hawkins

    发明人： Michael Haji-Sheikh ,  James Biard ,  Simon Rabinovich ,  James Guenter ,  Bobby Hawkins

    IPC分类号： H01L31/06

    CPC分类号： G01R31/2874 ,  H01S5/0021 ,  H01S5/02461 ,  H01S5/183

    摘要： Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

    摘要翻译： 提供了进行半导体器件的晶片级老化（WLBI）的方法，其中提供具有至少两个电极（210,215）的系统。 电晶体（920）和/或热功率（925）施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片（100）的每一侧上。 描述了一种柔性导电层（910），用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统（950），以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触（915）来执行晶片级老化; 使用下接触板（910）将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力（920）; 根据指定的老化标准对所述半导体器件监控和控制电力（935）一段时间; 在所述期间完成时移除电力（955）; 以及去除与所述半导体晶片（965）的电和物理接触。

    Systems for wafer level burn-in of electronic devices
    2.
    发明申请
    Systems for wafer level burn-in of electronic devices 有权
    电子设备晶圆级老化系统

    公开(公告)号：US20050024076A1

    公开(公告)日：2005-02-03

    申请号：US10486672

    申请日：2002-08-12

    申请人： Michael Haji-Sheikh ,  James Biard ,  Simon Rabinovich ,  James Guenter ,  Bobby Hawkins

    发明人： Michael Haji-Sheikh ,  James Biard ,  Simon Rabinovich ,  James Guenter ,  Bobby Hawkins

    IPC分类号： H01L21/66 ,  G01R31/27 ,  G01R31/28 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  G01R31/26

    CPC分类号： G01R31/275 ,  G01R31/2831 ,  G01R31/2863 ,  G01R31/2872 ,  G01R31/2874 ,  G01R31/2884 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/423

    摘要： Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) are presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having back (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is described for supplying pins or contacts (110) on device side of a wafer with electrical contact. The pliable conductive layer (220) can allow for an effective series R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations. A cooling system (660) is also described for enabling the application of a uniform temperature to the wafer (100) undergoing burn-in.

    摘要翻译： 提出了用于半导体器件（210,215）的晶片级老化（WLBI）的系统。 描述具有至少两个电极的系统，用于在具有由晶片（100）承载的半导体器件的背面（105）和前（110）电触点的晶片（100）的每一侧上施加电偏压和/或热功率。 。 还描述了使用该系统的晶片级烧伤的方法。 此外，描述了一种柔性导电层（220），用于在具有电接触的晶片的器件侧上提供引脚或触点（110）。 柔性导电层（220）可以允许由晶片（100）承载的每个器件中的有效串联R，从而有助于保持电压偏置电平一致。 柔性导电层还可以防止在老化操作期间通过室接触（210,215）向其施加压力和施加到晶片（100）的表面上的压力时损坏晶片。 还描述了一种冷却系统（660），用于使得能够对经历老化的晶片（100）施加均匀的温度。

    Methods of conducting wafer level burn-in of electronic devices
    3.
    发明授权
    Methods of conducting wafer level burn-in of electronic devices 有权
    进行电子器件晶圆级老化的方法

    公开(公告)号：US07700379B2

    公开(公告)日：2010-04-20

    申请号：US10486661

    申请日：2002-08-12

    申请人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

    发明人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

    IPC分类号： H01L21/66 ,  G01R31/26

    CPC分类号： G01R31/2874 ,  H01S5/0021 ,  H01S5/02461 ,  H01S5/183

    摘要： Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

    摘要翻译： 提供了进行半导体器件的晶片级老化（WLBI）的方法，其中提供具有至少两个电极（210,215）的系统。 电晶体（920）和/或热功率（925）施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片（100）的每一侧上。 描述了一种柔性导电层（910），用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统（950），以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触（915）来执行晶片级老化; 使用下接触板（910）将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力（920）; 根据指定的老化标准对所述半导体器件监测和控制电力（935）一段时间; 在所述期间完成时移除电力（955）; 以及去除与所述半导体晶片（965）的电和物理接触。