摘要:
A semiconductor component contains two semiconductor bodies, which are spatially separated from one another and electrically interconnected. A compensation MOS field effect transistor is provided as the first semiconductor body, and a silicon carbide Schottky diode is provided as the second semiconductor body. Consequently, the semiconductor component can advantageously be produced significantly more compactly and more cost-effectively, since both the compensation MOS field-effect transistor and the silicon carbide Schottky diode contribute to a significant reduction of power loss.
摘要:
A switching regulator has a drive circuit, receiving an intermediate circuit input voltage, an output voltage of an intermediate circuit capacitor and an output current at a current measuring element and controls the electrical output parameters and the power factor of the switching regulator in accordance with an adjustable desired value by controlling the duty ratio of a power switch. The drive circuit has a start circuit for dynamically increasing a current limiting level for the power switch during a start time after the switch-on instant of the switching regulator from an initially low level up to a current-limiting desired level at the end of the start time. The loading current-time integral for the diode and the power switch of the power factor correction circuit of the switching regulator is the least with this soft start circuit. Moreover, noise due to abrupt magnetic driving of the inductor is avoided.
摘要:
A circuit configuration, in particular, a switch-mode power supply, includes a transformer device and at least one semiconductor component to provide a particularly space-saving configuration having little susceptibility to interference, and with as little stray inductance as possible. The transformer device is in the form of an electromechanical conversion device, in particular, a piezo-transformer or the like, with, in particular, at least one connection of the transformer device forming a substantially mechanically identical connection to a connection of at least one semiconductor component.
摘要:
A circuit configuration has a load transistor and a current measuring configuration. A method ascertains a load current through a load transistor. The circuit configuration includes a first and a second current sensor with a current measuring transistor in each case. Each of the current sensors provide a current measurement signal that is fed to an evaluation circuit. The evaluation circuit provides, from the first current measurement signal, a current measurement signal that is dependent on the load current. The load transistor and the current measuring transistors are preferably integrated in a common semiconductor body having a multiplicity of transistor cells of identical construction. The evaluation circuit preferably accounts for the spatial position of the cells of the first and second current measuring transistors in the cell array.
摘要:
A circuit configuration has a load transistor and a current measuring configuration. A method ascertains a load current through a load transistor. The circuit configuration includes a first and a second current sensor with a current measuring transistor in each case. Each of the current sensors provide a current measurement signal that is fed to an evaluation circuit. The evaluation circuit provides, from the first current measurement signal, a current measurement signal that is dependent on the load current. The load transistor and the current measuring transistors are preferably integrated in a common semiconductor body having a multiplicity of transistor cells of identical construction. The evaluation circuit preferably accounts for the spatial position of the cells of the first and second current measuring transistors in the cell array.
摘要:
In order to keep the mounting outlay for shielding measures as low as possible, a semiconductor device having a semiconductor component in a housing element is proposed. At least one capacitive element having a first electrode, a second electrode and a dielectric is provided in an integrated manner in the housing element or in the region thereof. The electrode regions of the capacitive element are electrically contact-connected to terminal regions of the semiconductor component, in such a way that high-frequency interference signals between terminal regions can be suppressed.
摘要:
A current/voltage converter arrangement is proposed, in which a first switch device (T1) with a first diode (TD1) is provided between a first input terminal (TE1) of a primary side (TP) of a transformer device (T) provided and a first input terminal (E1) of an input region (E), in which a second switch device (T2) with a diode (TD2) is provided between a second input terminal (TE2) of the primary side (TP) and a second input terminal (E2) of the input region (E). The first and the second diode (TD1, TD2) are respectively in parallel with a first switch mechanism (TM1) of the first switch device (T1) and in parallel with a second switch mechanism (TM2) of the second switch device (T2) and formed in such a way that the respective switch mechanism (TM1, TM2) of the switch device (T1, T2) can in each case be bypassed in a controllable manner by means of an electrical conduction path, that the first switch device (T1) and the second switch device (T2) are formed in antiseries with respect to one another, and that the first switch device (T1) and the second switch device (T2) can be switched on and/or off in a controlled manner, in a clocked manner with a comparatively high or higher switching frequency (vsw) with respect to the input frequency (vin), and in an alternative manner with respect to one another.
摘要:
A current/voltage converter arrangement is proposed, in which a first switch device (T1) with a first diode (TD1) is provided between a first input terminal (TE1) of a primary side (TP) of a transformer device (T) provided and a first input terminal (E1) of an input region (E), in which a second switch device (T2) with a diode (TD2) is provided between a second input terminal (TE2) of the primary side (TP) and a second input terminal (E2) of the input region (E). The first and the second diode (TD1, TD2) are respectively in parallel with a first switch mechanism (TM1) of the first switch device (T1) and in parallel with a second switch mechanism (TM2) of the second switch device (T2) and formed in such a way that the respective switch mechanism (TM1, TM2) of the switch device (T1, T2) can in each case be bypassed in a controllable manner by means of an electrical conduction path, that the first switch device (T1) and the second switch device (T2) are formed in antiseries with respect to one another, and that the first switch device (T1) and the second switch device (T2) can be switched on and/or off in a controlled manner, in a clocked manner with a comparatively high or higher switching frequency (vsw) with respect to the input frequency (vin), and in an alternative manner with respect to one another.