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    FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING
    5.
    发明申请
    FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
    用于半导体加工的可流动的硅 - 碳 - 氮层

    公开(公告)号：US20130217240A1

    公开(公告)日：2013-08-22

    申请号：US13590611

    申请日：2012-08-21

    申请人： Abhijit Basu Mallick ,  Nitin K. Ingle ,  Linlin Wang ,  Brian S. Underwood

    发明人： Abhijit Basu Mallick ,  Nitin K. Ingle ,  Linlin Wang ,  Brian S. Underwood

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02274 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0234 ,  H01L21/31111

    摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.

    摘要翻译： 描述了在半导体衬底上形成电介质层的方法。 所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。 含硅前体和带电的含氮前体可以在化学气相沉积室中反应，以在基底上沉积可流动的硅 - 碳 - 氮材料。 所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。

    TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS
    6.
    发明申请
    TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS 审中-公开
    在含硅和含氮层的流动沉积后减少蚀刻速率的处理

    公开(公告)号：US20130217241A1

    公开(公告)日：2013-08-22

    申请号：US13590702

    申请日：2012-08-21

    申请人： Brian S. Underwood ,  Linlin Wang ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    发明人： Brian S. Underwood ,  Linlin Wang ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02274 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31111

    摘要： Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

    摘要翻译： 描述了用于在半导体衬底上形成和固化可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化的氮含量的前驱物，以加速氮与含较低沉积室的含硅和碳的前体的反应 温度。 处理初始可流动的含硅碳和氮的层以去除能够流动的组分，但在沉积后不再需要。 组分的去除增加了耐蚀刻性，以便允许间隙填充硅 - 碳 - 和含氮层在后续处理过程中保持完整。 已经发现这些处理降低了暴露于大气中的膜的性质的演变。

    DOPING OF DIELECTRIC LAYERS
    7.
    发明申请
    DOPING OF DIELECTRIC LAYERS 审中-公开
    电介质层的掺杂

    公开(公告)号：US20130217243A1

    公开(公告)日：2013-08-22

    申请号：US13590761

    申请日：2012-08-21

    申请人： Brian S. Underwood ,  Nitin K. Ingle ,  Abhijit Basu Mallick

    发明人： Brian S. Underwood ,  Nitin K. Ingle ,  Abhijit Basu Mallick

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02356 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31111 ,  H01L21/31155

    摘要： Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

    摘要翻译： 描述了用于在半导体衬底上形成和处理可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化以加速氮与含硅和碳的前体的反应的含氮前体 较低的沉积温度。 初始可流动的含硅碳和氮的层被离子注入以增加蚀刻耐受性，防止收缩，调节膜张力和/或调节电特性。 离子注入还可以去除能够流动的组分，但是在沉积后不再需要它们。 已经发现使用离子注入的一些处理降低了暴露于大气中的膜的性质的演变。