公开(公告)号：US07573931B2

公开(公告)日：2009-08-11

申请号：US10042590

申请日：2002-01-09

申请人： Michael Renne Ty Tan ,  Chao Kun Lin ,  Scott W. Corzine ,  Jintian Zhu ,  Michael H. Leary

发明人： Michael Renne Ty Tan ,  Chao Kun Lin ,  Scott W. Corzine ,  Jintian Zhu ,  Michael H. Leary

IPC分类号： H01S3/08 ,  H01S5/343

CPC分类号： H01S5/18341 ,  H01S5/18308 ,  H01S5/18363 ,  H01S5/2224 ,  H01S5/3095

摘要： A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.

摘要翻译： 公开了一种结合有支撑气隙分布布拉格反射器的垂直腔表面发射激光器。 支撑气隙DBR包括为原始材料层提供机械支撑的再生长材料层。 支撑的气隙DBR是通过在合适的衬底上首先生长第一材料和牺牲材料的交替对来制造的。 第一材料和牺牲材料的层对被合适的介电材料覆盖。 然后选择性地去除介电材料暴露第一材料和牺牲材料的区域，其中期望附加材料的选择性再生长。 附加材料的选择性再生长为在牺牲材料的选择性蚀刻去除之后保留的半导体材料提供机械支撑。

公开(公告)号：US07116483B2

公开(公告)日：2006-10-03

申请号：US11122555

申请日：2005-05-04

申请人： Scott W. Corzine ,  Michael Renne Ty Tan ,  Chao Kun Lin ,  Jintian Zhu ,  Michael H. Leary

发明人： Scott W. Corzine ,  Michael Renne Ty Tan ,  Chao Kun Lin ,  Jintian Zhu ,  Michael H. Leary

IPC分类号： G02B1/10

CPC分类号： H01S5/18341 ,  H01S5/18308 ,  H01S5/18363

摘要： A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

公开(公告)号：US06947217B2

公开(公告)日：2005-09-20

申请号：US10022757

申请日：2001-12-14

申请人： Scott W. Corzine ,  Michael Renne Ty Tan ,  Chao Kun Lin ,  Jintian Zhu ,  Michael H. Leary

发明人： Scott W. Corzine ,  Michael Renne Ty Tan ,  Chao Kun Lin ,  Jintian Zhu ,  Michael H. Leary

IPC分类号： H01S5/183 ,  G02B1/10

CPC分类号： H01S5/18341 ,  H01S5/18308 ,  H01S5/18363

摘要： A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

摘要翻译： 分布式布拉格反射器及其制造方法包括用于支撑间隙以防止塌陷的支撑件。 该方法包括在衬底上形成多个交替结构和牺牲层。 将结构和牺牲层刻蚀成从衬底突出的至少一个台面。 在至少一个台面上形成支撑层，留下结构的一部分和暴露的牺牲层。 暴露的牺牲层中的至少一个的至少一部分从结构层之间被蚀刻，以在结构层之间形成间隙。

公开(公告)号：US09343641B2

公开(公告)日：2016-05-17

申请号：US13196870

申请日：2011-08-02

申请人： Chao Kun Lin

发明人： Chao Kun Lin

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/40 ,  H01L23/00

CPC分类号： H01L33/62 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/40 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/0655 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a silicon substrate upon which an epitaxial LED structure is disposed. A layer of silver is disposed on the epitaxial LED structure. The carrier wafer structure includes a conductive silicon substrate covered with an adhesion layer. A layer of non-reactive barrier metal (e.g., titanium) is provided between the silver layer and the eutectic metal to prevent metal from the eutectic layer (e.g., tin) from diffusing into the silver during wafer bonding. During wafer bonding, the wafer structures are pressed together and maintained at more than 280° C. for more than one minute. Use of the non-reactive barrier metal layer allows the total amount of expensive platinum used in the manufacture of a vertical blue LED manufactured on silicon to be reduced, thereby reducing LED manufacturing cost.

摘要翻译： 共晶金属层（例如，金/锡）将载体晶片结构结合到器件晶片结构。 在一个示例中，器件晶片结构包括其上设置有外延LED结构的硅衬底。 一层银布置在外延LED结构上。 载体晶片结构包括被粘合层覆盖的导电硅基板。 在银层和共晶金属之间提供一层非反应性阻挡金属（例如钛），以防止晶片接合期间来自共晶层（例如锡）的金属扩散到银中。 在晶片接合期间，将晶片结构压在一起并保持在280℃以上超过一分钟。 使用非反应性阻挡金属层允许在制造在硅上制造的垂直蓝色LED中使用的昂贵的铂的总量减少，从而降低LED制造成本。