摘要:
A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.
摘要:
A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.
摘要:
A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.
摘要:
Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure.
摘要:
Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure.
摘要:
A semiconductor device, such as a laser, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, an etching stop layer disposed over the substrate, and an active region layer disposed on the etching stop layer. The active region layer is further disposed opposite the substrate.
摘要:
An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.
摘要:
An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.
摘要:
A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.
摘要:
A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.