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    Optical modulator based on a microdisk resonator
    2.
    发明授权
    Optical modulator based on a microdisk resonator 失效
    基于微盘谐振器的光调制器

    公开(公告)号：US06920253B2

    公开(公告)日：2005-07-19

    申请号：US10678887

    申请日：2003-10-02

    申请人： Michael R. Tan ,  Scott W. Corzine ,  Mihail Sigalas ,  Chaokun Lin ,  Kostadin Djordjev

    发明人： Michael R. Tan ,  Scott W. Corzine ,  Mihail Sigalas ,  Chaokun Lin ,  Kostadin Djordjev

    IPC分类号： G02B6/12 ,  G02F1/015 ,  G02F1/017 ,  G02F1/01 ,  H04B10/12

    CPC分类号： B82Y20/00 ,  G02B6/12007 ,  G02B2006/12097 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2203/15

    摘要： A modulator having a waveguide and a microdisk resonator is disclosed. The waveguide has an input port for receiving a light signal of wavelength λ and an output port for transmitting modulated light. The microdisk resonator has a resonance at λ and is coupled to the waveguide between the input and output ports such that at least 10 percent of the light traveling in the waveguide is coupled to the microdisk resonator. The microdisk resonator further includes a material having a first state and a second state, the material absorbing more of the light in the first state than in the second state. The first and second states are selectable by a signal that is applied to the microdisk resonator. In one embodiment, the waveguide and the microdisk resonator occupy different portions of a sheet of material having the various layers used to construct the resonator.

    摘要翻译： 公开了一种具有波导和微盘谐振器的调制器。 波导具有用于接收波长λ的光信号的输入端口和用于传输调制光的输出端口。 微型磁盘谐振器在λ处具有共振，并且在输入和输出端口之间耦合到波导，使得在波导中传播的光的至少10％耦合到微型磁盘谐振器。 所述微盘谐振器还包括具有第一状态和第二状态的材料，所述材料在第一状态下比在第二状态下吸收更多的光。 第一和第二状态可以通过施加到微盘谐振器的信号来选择。 在一个实施例中，波导和微盘共振器占据具有用于构造谐振器的各种层的材料片的不同部分。

    Laser employing a zinc-doped tunnel-junction
    3.
    发明授权
    Laser employing a zinc-doped tunnel-junction 有权
    激光采用锌掺杂隧道结

    公开(公告)号：US07180923B2

    公开(公告)日：2007-02-20

    申请号：US10367200

    申请日：2003-02-13

    申请人： David Bour ,  Chaokun Lin ,  Michael Tan ,  Bill Perez

    发明人： David Bour ,  Chaokun Lin ,  Michael Tan ,  Bill Perez

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18358 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3235

    摘要： An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.

    摘要翻译： 公开了一种改进的隧道结结构和使用该结构的VCSEL。 隧道结包括第一层，第二层和第三层，包括InP材料系列的材料。 第一层掺杂有n型掺杂剂物质，浓度为每厘米3或更大的10 19掺杂剂原子。 第二层掺杂有类似浓度的Zn并与第一层接触。 第一和第二层之间的界面形成隧道结。 第三层包括阻止Zn扩散到第二层的材料。 第三层优选包括未掺杂的AlInAs。 本发明的隧道结结构可以用于具有由n型半导体层构成的第一和第二反射镜之间的有源层的VCSEL。

    Electroabsorption modulator
    4.
    发明授权
    Electroabsorption modulator 有权
    电吸收调制器

    公开(公告)号：US07142342B2

    公开(公告)日：2006-11-28

    申请号：US10453376

    申请日：2003-06-02

    申请人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

    发明人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

    IPC分类号： G02F1/03 ,  G02F1/07

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157

    摘要： The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

    摘要翻译： 电吸收调制器包括p-i-n结结构，其包括有源层，p型包层和n型包覆层，活性层夹在包层之间。 电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层，当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层 调制器。 缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。 增加的场强提高了电吸收调制器的消光比。