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26 条记录 (耗时 0.021 秒)

    Electroabsorption modulator
    1.
    发明授权
    Electroabsorption modulator 有权
    电吸收调制器

    公开(公告)号：US07142342B2

    公开(公告)日：2006-11-28

    申请号：US10453376

    申请日：2003-06-02

    申请人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

    发明人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

    IPC分类号： G02F1/03 ,  G02F1/07

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157

    摘要： The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

    摘要翻译： 电吸收调制器包括p-i-n结结构，其包括有源层，p型包层和n型包覆层，活性层夹在包层之间。 电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层，当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层 调制器。 缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。 增加的场强提高了电吸收调制器的消光比。

    InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
    2.
    发明授权
    InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
    基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层

    公开(公告)号：US06730944B1

    公开(公告)日：2004-05-04

    申请号：US10354276

    申请日：2003-01-30

    申请人： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

    发明人： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/3436 ,  H01S2302/00

    摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.

    摘要翻译： 本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。 激光器结构包括InAsP的量子阱层。 量子阱层夹在第一阻挡层和第二阻挡层之间。 每个阻挡层表现出比量子阱层更高的带隙能量。 此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。 所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

    Deep quantum well electro-absorption modulator
    5.
    发明授权
    Deep quantum well electro-absorption modulator 失效
    深量子阱电吸收调制器

    公开(公告)号：US07443561B2

    公开(公告)日：2008-10-28

    申请号：US11148467

    申请日：2005-06-08

    申请人： David P. Bour ,  Ashish Tandon ,  Michael R. T. Tan

    发明人： David P. Bour ,  Ashish Tandon ,  Michael R. T. Tan

    IPC分类号： G02F1/03 ,  H01L29/06 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01725 ,  G02F2001/01766 ,  G02F2202/101 ,  G02F2202/102

    摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

    摘要翻译： 电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。 以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心 好。 电吸收调制器提供的消光比通常增加。

    Quartz boat method and apparatus for thin film thermal treatment
    8.
    发明授权
    Quartz boat method and apparatus for thin film thermal treatment 失效
    用于薄膜热处理的石英舟法和设备

    公开(公告)号：US08461061B2

    公开(公告)日：2013-06-11

    申请号：US13171089

    申请日：2011-06-28

    申请人： Paul Alexander ,  Jurg Schmitzberger ,  Ashish Tandon ,  Robert D. Wieting

    发明人： Paul Alexander ,  Jurg Schmitzberger ,  Ashish Tandon ,  Robert D. Wieting

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67316 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/6734 ,  H01L31/18

    摘要： A method of supporting a plurality of planar substrates in a tube shaped furnace for conducting a thermal treatment process is disclosed. The method uses a boat fixture having a base frame including two length portions and a first width portion, a second width portion, and one or more middle members connected between the two length portions. Additionally, the method includes mounting a removable first grooved rod respectively on the first width portion, the second width portion, and each of the one or more middle members, each first grooved rod having a first plurality of grooves characterized by a first spatial configuration. The method further includes inserting one or two substrates of a plurality of planar substrates into each groove in the boat fixture separated by a distance.

    摘要翻译： 公开了一种在管状炉中支撑多个平面基板以进行热处理工艺的方法。 该方法使用具有包括两个长度部分的基部框架和第一宽度部分，第二宽度部分以及连接在两个长度部分之间的一个或多个中间部件的船舶固定装置。 另外，该方法包括分别在第一宽度部分，第二宽度部分和一个或多个中间部件中的每一个上安装可拆卸的第一带槽杆，每个第一带槽杆具有以第一空间构造为特征的第一多个凹槽。 该方法还包括将多个平面基板中的一个或两个基板插入分隔开一定距离的船夹具中的每个凹槽中。

    Single Junction CIGS/CIS Solar Module
    9.
    发明申请
    Single Junction CIGS/CIS Solar Module 审中-公开
    单相CIGS / CIS太阳能模块

    公开(公告)号：US20110259395A1

    公开(公告)日：2011-10-27

    申请号：US13086135

    申请日：2011-04-13

    申请人： Robert D. Wieting ,  Rajiv Pethe ,  Kannan Ramanathan ,  May Shao ,  Ashish Tandon

    发明人： Robert D. Wieting ,  Rajiv Pethe ,  Kannan Ramanathan ,  May Shao ,  Ashish Tandon

    IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L27/142

    CPC分类号： H01L31/0322 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.

    摘要翻译： 在基板上形成高效率的薄膜光伏模块。 光伏模块包括多个条形的光伏电池，它们彼此电耦合，并且物理地设置成与跨越宽度的另一个相邻的长度平行。 每个电池包括覆盖在表面上的阻挡材料和覆盖阻挡材料的第一电极。 每个电池还包括形成在第一电极上的吸收体。 吸收剂包括铜镓铟二硒化合物材料，其特征在于约1eV至1.1eV的能带隙。 每个电池还包括覆盖吸收体的缓冲材料和包含覆盖在缓冲材料上的高电阻率透明层和覆盖在高电阻率透明层上的低电阻率透明层的双层氧化锌材料。