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公开(公告)号：US20140262752A1
公开(公告)日：2014-09-18
申请号：US14234019
申请日：2012-07-23
CPC分类号： C23C14/35 , C23C14/352 , C23C14/505 , C23C14/564 , H01J37/3405 , H01J37/342
摘要： The invention relates to methods and devices for producing one or more low-particle layers on substrates in a vacuum. The layers are deposited onto the substrate from a cylindrical source material, optionally together with a reactive gas component, by means of magnetron sputtering. The layer is deposited against the force of gravity in a sputter-up method. During the method or within the device, the structure or stochiometric atomic composition of the layers can optionally be modified using a plasma source. Multiple sputtering sources with different source materials can be provided in the device such that multiple layers of different compositions can be applied on the substrate at a high speed in one process.
摘要翻译： 本发明涉及在真空中在衬底上生产一个或多个低颗粒层的方法和装置。 这些层通过磁控管溅射从圆柱形源材料，任选地与反应性气体组分一起沉积到衬底上。 该层以溅射方法抵抗重力沉积。 在该方法或器件期间，可以使用等离子体源来任意地修改层的结构或固体原子组成。 可以在器件中提供具有不同源材料的多个溅射源，使得可以在一个工艺中以高速将多层不同的组合物施加在衬底上。
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公开(公告)号：US09803276B2
公开(公告)日：2017-10-31
申请号：US14234019
申请日：2012-07-23
CPC分类号： C23C14/35 , C23C14/352 , C23C14/505 , C23C14/564 , H01J37/3405 , H01J37/342
摘要： The invention relates to methods and devices for producing one or more low-particle layers on substrates in a vacuum. The layers are deposited onto the substrate from a cylindrical source material, optionally together with a reactive gas component, by means of magnetron sputtering. The layer is deposited against the force of gravity in a sputter-up method. During the method or within the device, the structure or stochiometric atomic composition of the layers can optionally be modified using a plasma source. Multiple sputtering sources with different source materials can be provided in the device such that multiple layers of different compositions can be applied on the substrate at a high speed in one process.
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公开(公告)号：US06451178B2
公开(公告)日：2002-09-17
申请号：US08959633
申请日：1997-10-28
IPC分类号： C23C1435
CPC分类号： C03C17/366 , C03C17/2456 , C03C17/36 , C03C2217/212 , C03C2217/734 , C03C2218/155 , C03C2218/156 , C23C14/0036 , C23C14/083 , C23C14/10 , C23C14/3471
摘要： A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.
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公开(公告)号：US06814839B2
公开(公告)日：2004-11-09
申请号：US10067711
申请日：2002-02-05
IPC分类号： C23C1434
CPC分类号： C03C17/366 , C03C17/2456 , C03C17/36 , C03C2217/212 , C03C2217/734 , C03C2218/155 , C03C2218/156 , C23C14/0036 , C23C14/083 , C23C14/10 , C23C14/3471
摘要： A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.
摘要翻译： 提供了通过反应溅射工艺溅射诱导沉积在衬底上的金属氧化物层的工艺。 提供作用在待蒸发的靶上的等离子体电荷被选择为使得沉积在待涂覆的基底上的金属氧化物层以> = 4nm / s的沉淀速率沉积。 在涂覆过程中，待涂覆的基材相对于要蒸发的目标材料静止地布置。 电极以导电方式连接到交流电源的输出，由此为等离子体放电的电源提供的交流电的交变频率选择在10kHz和80kHz之间。 特别优选的是，沉淀氧化物层是TiO 2层或SiO 2层。
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公开(公告)号：US06241824B1
公开(公告)日：2001-06-05
申请号：US09366971
申请日：1999-08-04
申请人： Günter Bräuer , Hermann Kloberdanz , Hans-Georg Lotz , Jochen Schneider , Alfons Zöller , Harro Hagedorn , Michael König , Jürgen Meinel , Götz Teschner
发明人： Günter Bräuer , Hermann Kloberdanz , Hans-Georg Lotz , Jochen Schneider , Alfons Zöller , Harro Hagedorn , Michael König , Jürgen Meinel , Götz Teschner
IPC分类号： C23C1600
CPC分类号： C23C14/568
摘要： In an apparatus for the coating of substrates in a vacuum with rotatable substrate carriers (15,16,20) and with a loading and an unloading station (8 or 9), two vacuum chambers (3,4) are provided with several coating stations (6,7 or 10 to 14), directly next to one another, wherein a rotatable transport arm (15 or 16) is accommodated in each of the two chambers (3, 4), and the transport planes of the two transport arms (15,16) are aligned with one another. In the separation area of the two chambers (3,4), an air lock is provided with a corresponding transfer apparatus (5) with two transport arms (15,16), whose rotary plate (20) is provided with substrate storage unit (21,22) and projects about halfway into one chamber (3) and halfway into the other chamber (4), wherein one chamber (3) has both the loading as well as the unloading station (8 or 9).
摘要翻译： 在用可旋转的基板载体（15,16,20）和装载和卸载站（8或9）在真空中涂覆基板的设备中，设有两个真空室（3,4） （6,7或10至14），彼此直接相邻，其中可旋转传送臂（15或16）容纳在两个室（3,4）的每一个中，并且两个传送臂的传送平面 15,16）彼此对齐。 在两个腔室（3,4）的分离区域中，气锁设置有具有两个输送臂（15,16）的相应的传送装置（5），其旋转板（20）设置有衬底存储单元 21,22），并且在一个室（3）的中途突出并且进入另一个室（4）的中途，其中一个室（3）具有两个装载以及卸载站（8或9）。
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