公开(公告)号：US20100319764A1

公开(公告)日：2010-12-23

申请号：US12819534

申请日：2010-06-21

申请人： Michael W. Wiemer ,  Homan B. Yuen ,  Vijit A. Sabnis ,  Michael J. Sheldon ,  Ilya Fushman

发明人： Michael W. Wiemer ,  Homan B. Yuen ,  Vijit A. Sabnis ,  Michael J. Sheldon ,  Ilya Fushman

IPC分类号： H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/0687 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/035209 ,  Y02E10/544

摘要： Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time/temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells.

摘要翻译： 通过提供稀土-V族中间层（例如砷砷化物（ErAs））来改善隧道结，以产生中间隙状态辅助隧道二极管结构。 这种隧道结可以在将稀氮化物材料集成到III-V多结太阳能电池中所需的范围内的热能条件（时间/温度）下存活。

公开(公告)号：US09337360B1

公开(公告)日：2016-05-10

申请号：US12944361

申请日：2010-11-11

申请人： Michael W. Wiemer ,  Homan B. Yuen ,  Vijit A. Sabnis ,  Ting Liu ,  Pranob Misra ,  Michael J. Sheldon ,  Onur Fidaner

发明人： Michael W. Wiemer ,  Homan B. Yuen ,  Vijit A. Sabnis ,  Ting Liu ,  Pranob Misra ,  Michael J. Sheldon ,  Onur Fidaner

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/0725 ,  H01L31/0735

CPC分类号： H01L31/022425 ,  H01L31/022433 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544

摘要： A multi junction solar cell is provided with a non-alloyed ohmic contact metallization stack by inversion of the top semiconductor layer from n-type to p-type and including the utilization of a tunnel junction. Alternatively, the non-alloyed ohmic contact can be achieved by changing the top semiconductor layer from a higher bandgap material to a lower bandgap material.

摘要翻译： 多结太阳能电池通过顶部半导体层从n型到p型反转并且包括利用隧道结而设置有非合金欧姆接触金属化堆叠。 或者，非合金欧姆接触可以通过将顶部半导体层从较高带隙材料改变为较低带隙材料来实现。

公开(公告)号：US20110114163A1

公开(公告)日：2011-05-19

申请号：US12944439

申请日：2010-11-11

申请人： Michael W. Wiemer ,  Homan B. Yuen ,  Vijit A. Sabnis ,  Michael J. Sheldon

发明人： Michael W. Wiemer ,  Homan B. Yuen ,  Vijit A. Sabnis ,  Michael J. Sheldon

IPC分类号： H01L31/06

CPC分类号： H01L31/0687 ,  H01L31/1852 ,  Y02E10/544

摘要： An “n-on-p” type multijunction solar cell structure is disclosed using an n-type substrate for the epitaxial growth of III-V semiconductor material, wherein a “p-on-n” tunnel junction diode is disposed between the substrate and one or more heteroepitaxial layers of III-V semiconductor materials.

摘要翻译： 公开了一种“n-on-p”型多结太阳能电池结构，其使用用于III-V半导体材料的外延生长的n型衬底，其中“p-on-n”隧道结二极管设置在衬底和 III-V族半导体材料的一个或多个异质外延层。

公开(公告)号：US20120216858A1

公开(公告)日：2012-08-30

申请号：US13370500

申请日：2012-02-10

申请人： Rebecca Elizabeth Jones-Albertus ,  Ferran Suarez Arias ,  Michael West Wiemer ,  Michael J. Sheldon ,  Homan B. Yuen

发明人： Rebecca Elizabeth Jones-Albertus ,  Ferran Suarez Arias ,  Michael West Wiemer ,  Michael J. Sheldon ,  Homan B. Yuen

IPC分类号： H01L31/0687 ,  H01L31/18

CPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/06875 ,  Y02E10/52 ,  Y02E10/544

摘要： Photovoltaic cells with one or more subcells are provided with a wide band gap, pseudomorphic window layer of at least 15 nm in thickness and with an intrinsic material lattice constant that differs by at least 1% from an adjacent emitter layer. This window layer has a higher band gap than a window layer with substantially the same intrinsic material lattice constant as the adjacent emitter layer, which increases the light transmission through the window, thereby increasing the current generation in the solar cell. The quality of being pseudomorphic material preserves a good interface between the window and the emitter, reducing the minority carrier surface recombination velocity. A method is provided for building a wide band gap, pseudomorphic window layer of a photovoltaic cell that has an intrinsic material lattice constant that differs by at least 1% from the adjacent emitter layer.

摘要翻译： 具有一个或多个子电池的光电池具有厚度至少为15nm的宽带隙，假晶窗口层，其本征材料晶格常数与相邻发射极层相差至少1％。 该窗口层具有比具有与相邻发射极层基本上相同的本征材料晶格常数的窗口层的更高的带隙，这增加了通过窗口的光透射，从而增加了太阳能电池中的电流产生。 假型材料的质量保持了窗口和发射极之间良好的界面，减少了少数载流子表面复合速度。 提供了一种用于构建光电池的宽带隙，伪晶体窗层的方法，其具有与相邻发射极层相差至少1％的本征材料晶格常数。

公开(公告)号：US08962991B2

公开(公告)日：2015-02-24

申请号：US13370500

申请日：2012-02-10

申请人： Rebecca Elizabeth Jones-Albertus ,  Ferran Suarez Arias ,  Michael West Wiemer ,  Michael J. Sheldon ,  Homan B. Yuen

发明人： Rebecca Elizabeth Jones-Albertus ,  Ferran Suarez Arias ,  Michael West Wiemer ,  Michael J. Sheldon ,  Homan B. Yuen

IPC分类号： H01L31/04 ,  H01L31/0687 ,  H01L31/0304

CPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/06875 ,  Y02E10/52 ,  Y02E10/544

摘要： Photovoltaic cells with one or more subcells are provided with a wide band gap, pseudomorphic window layer of at least 15 nm in thickness and with an intrinsic material lattice constant that differs by at least 1% from an adjacent emitter layer. This window layer has a higher band gap than a window layer with substantially the same intrinsic material lattice constant as the adjacent emitter layer, which increases the light transmission through the window, thereby increasing the current generation in the solar cell. The quality of being pseudomorphic material preserves a good interface between the window and the emitter, reducing the minority carrier surface recombination velocity. A method is provided for building a wide band gap, pseudomorphic window layer of a photovoltaic cell that has an intrinsic material lattice constant that differs by at least 1% from the adjacent emitter layer.

摘要翻译： 具有一个或多个子电池的光电池具有厚度至少为15nm的宽带隙，假晶窗口层，其本征材料晶格常数与相邻发射极层相差至少1％。 该窗口层具有比具有与相邻发射极层基本上相同的本征材料晶格常数的窗口层的更高的带隙，这增加了通过窗口的光透射，从而增加了太阳能电池中的电流产生。 假型材料的质量保持了窗口和发射极之间良好的界面，减少了少数载流子表面复合速度。 提供了一种用于构建光电池的宽带隙，伪晶体窗层的方法，其具有与相邻发射极层相差至少1％的本征材料晶格常数。

公开(公告)号：US20090014061A1

公开(公告)日：2009-01-15

申请号：US12217818

申请日：2008-07-08

申请人： James S. Harris, JR. ,  Homan B. Yuen ,  Seth R. Bank ,  Mark A. Wistey ,  David B. Jackrel

发明人： James S. Harris, JR. ,  Homan B. Yuen ,  Seth R. Bank ,  Mark A. Wistey ,  David B. Jackrel

IPC分类号： H01L31/00

CPC分类号： H01L31/078 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.

摘要翻译： 提供了一种高效率三联结太阳能电池及其制造方法，其中在不同类型的III-V族半导体合金材料之间形成接合体，其一种合金含有有效量的锑（Sb）与镓（Ga ），铟（In），氮（N，氮化物成分）和砷（As），形成在太阳能电池中特别有利的稀土氮化物半导体层GaInNAS Sb。 特别地，带隙和晶格匹配促进了有效的太阳能转换。