摘要:
An object of the present invention is to provide: a thin imaging device in which a high image resolution is obtained and in which the resolution does not uniformly vary even when the shooting distance is changed; and a lens array used therein. The present invention relates to an imaging device comprising: a lens array 130 constructed by arranging in parallel a plurality of lens elements having optical power in at least one surface; and an image sensor 110 in which an optical image formed by an optical system having each of the lens elements is received by each of mutually different imaging regions each having a plurality of photoelectric conversion sections so that the optical image is converted into an electric image signal, wherein each lens element and the imaging region corresponding to the lens element constitute an imaging unit, while the imaging units have diverse imaging region areas. The present invention relates also to a lens array used therein.
摘要:
There is provided an imaging device which is small in light loss, is operable to suppress an occurrence of a stray light, and is operable to provide an image with a high quality as far as a periphery thereof. The imaging device operable to output an image of an object as an electrical image signal, comprising: a solid-state imaging sensor including pixels which are two dimensionally arranged on a first flat surface and each of which has a photo-electric conversion function; and a lens array including micro lenses two dimensionally arranged on a second flat surface separately provided so as to be parallel to the first flat surface, in which the solid-state imaging sensor includes an imaging area of unit including a plurality of pixels, and each of the micro lenses forms an optical image of the object on a corresponding imaging area of unit and satisfies a predetermined condition, arctan(L/f)≦θ, for a pixel, from among pixels included in an imaging area of unit corresponding to each micro lens, positioned farthest from an optical axis of a corresponding micro lens. Here, θ is a maximum angle of an incident light capable of entering a pixel, f is a focal length of a micro lens, and L is a diameter of a circle circumscribing an imaging area of unit corresponding to one of the micro lenses.
摘要:
A thin image sensor which is capable of projecting an illuminating light for illuminating an object and has high optical performance is provided. An image sensor (10) includes: a lens array (11) including lens elements (11a) arranged in an array on a plane; an imaging element (13) for converting an optical image into an electrical signal, the imaging element including imaging areas, each of which includes a plurality of photoelectric conversion sections and is operable to receive the optical image; and a light source section (14) for projecting an illuminating light for illuminating an object from which the optical images are to be formed.
摘要:
An imaging apparatus includes an imaging optical system for forming an optical image of an object, the imaging optical system including a focal length adjusting section adjustable a focal length based on an input signal and a plurality of image forming lenses for receiving a light that has transmitted through said focal length adjusting section to form the optical image of the object, and an image sensor for generating an electrical image signal obtained by converting the optical image, wherein a unit is composed of each of the image forming lens and an image taking area on the image sensor having a plurality of light receiving sections for receiving the optical image, and a plurality of units being two-dimensionally arranged, so that it is possible to provide the imaging apparatus with high convenience, which is reduced in thickness, and whose focal length adjustable.
摘要:
There is provided an imaging device which is small in light loss, is operable to suppress an occurrence of a stray light, and is operable to provide an image with a high quality as far as a periphery thereof. The imaging device operable to output an image of an object as an electrical image signal, comprising: a solid-state imaging sensor including pixels which are two dimensionally arranged on a first flat surface and each of which has a photo-electric conversion function; and a lens array including micro lenses two dimensionally arranged on a second flat surface separately provided so as to be parallel to the first flat surface, in which the solid-state imaging sensor includes an imaging area of unit including a plurality of pixels, and each of the micro lenses forms an optical image of the object on a corresponding imaging area of unit and satisfies a predetermined condition, arctan(L/f)≦θ, for a pixel, from among pixels included in an imaging area of unit corresponding to each micro lens, positioned farthest from an optical axis of a corresponding micro lens. Here, θ is a maximum angle of an incident light capable of entering a pixel, f is a focal length of a micro lens, and L is a diameter of a circle circumscribing an imaging area of unit corresponding to one of the micro lenses.
摘要:
A plurality of types of ink having different wavelength characteristics are used for multiple printing of code information. When two or more types of ink are to be printed in an overlapping manner, in a region 8 in which one type of ink 4 and another type of ink 5 are printed in the overlapping manner, the ink 4 and the ink 5 are printed so as not to completely overlap each other by using a checkered pattern 9. As a result, the multiple printing can be performed without strict constraints on the wavelength characteristics of the ink.
摘要:
A device for calculating diffraction efficiencies of a diffraction lens divided into a plurality of regions, each region comprising at least one grating ring, comprises a first memory for storing information about diffraction efficiencies of the regions; a second memory for storing information about weights corresponding to the regions; and a first processor for retrieving information from the first and the second memory, and calculating diffraction efficiencies of the entire diffraction lens using the formula E j = ∑ m = 1 M W m η mj ( 1 ) wherein: j: integer indicating the order of diffraction light Ej: diffraction efficiency for j-th order diffraction light of the diffraction lens M: positive integer (M>1) indicating the number of regions for which the diffraction efficiency is calculated m: index of the region for which the diffraction efficiency is calculated ηmj: diffraction efficiency for the j-th order diffraction light of the m-th region (stored in the first memory) Wm: weight for the m-th region (stored in the second memory means). Thus, the diffraction efficiency of the diffraction lens can be calculated easily.
摘要:
A device for calculating diffraction efficiencies of a diffraction lens divided into a plurality of regions, each region comprising at least one grating ring, comprises a first memory for storing information about diffraction efficiencies of the regions; a second memory for storing information about weights corresponding to the regions; and a first processor for retrieving information from the first and the second memory, and calculating diffraction efficiencies of the entire diffraction lens using the formula E j = ∑ m = 1 M W m η mj ( 1 ) wherein: j: integer indicating the order of diffraction light Ej: diffraction efficiency for j-th order diffraction light of the diffraction lens M: positive integer (M>1) indicating the number of regions for which the diffraction efficiency is calculated m: index of the region for which the diffraction efficiency is calculated &eegr;mj: diffraction efficiency for the j-th order diffraction light of the m-th region (stored in the first memory) Wm: weight for the m-th region (stored in the second memory means). Thus, the diffraction efficiency of the diffraction lens can be calculated easily.
摘要:
A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.
摘要:
A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.