Magnetic recording medium and process for its production
    2.
    发明授权
    Magnetic recording medium and process for its production 失效
    磁记录介质及其生产工艺

    公开(公告)号:US06309765B1

    公开(公告)日:2001-10-30

    申请号:US09262006

    申请日:1999-03-04

    IPC分类号: G11B566

    CPC分类号: G11B5/66 Y10S428/90

    摘要: A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording layer formed on the substrate with an underlayer of Cr or a Cr alloy interposed therebetween, which has a seed layer between the substrate and the underlayer, wherein said seed layer is made of a material which contains at least 30 ppm of oxygen and which has a B2 crystal structure.

    摘要翻译: 一种磁记录介质,包括非铁磁性基板和磁记录层,所述磁记录层在基板上形成有Cr或Cr合金基底,其间具有在基板和底层之间的种子层,其中所述种子层由 含有至少30ppm氧并具有B2晶体结构的材料。

    Magnetic recording medium
    3.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号:US06743528B2

    公开(公告)日:2004-06-01

    申请号:US09895679

    申请日:2001-06-29

    IPC分类号: G11B566

    摘要: A magnetic recording medium comprising a non-ferromagnetic substrate and a magnetic recording film formed on the substrate with an underlayer interposed therebetween, wherein the magnetic recording film comprises a plurality of magnetic layers and an interlayer made of a material having a B2 crystal structure or an interlayer made of Ru, disposed between the adjacent magnetic layers.

    摘要翻译: 一种磁记录介质,包括非铁磁性基板和形成在基板上的磁记录膜,其中介于其间的底层,其中磁记录膜包括多个磁性层和由具有B2晶体结构或 由Ru构成的中间层,设置在相邻的磁性层之间。

    Ultra-thin nucleation layer for magnetic thin film media and the method for manufacturing the same
    5.
    发明授权
    Ultra-thin nucleation layer for magnetic thin film media and the method for manufacturing the same 有权
    用于磁性薄膜介质的超薄成核层及其制造方法

    公开(公告)号:US06500567B1

    公开(公告)日:2002-12-31

    申请号:US09677644

    申请日:2000-10-03

    IPC分类号: G11B566

    摘要: In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD. The perfection of the grains is very high so that high anisotropy is obtained in the magnetic layer, resulting in high Hc without the necessity of addition of high level of Pt. The high degree of crystalline perfection also contributes to low TNLD.

    摘要翻译: 在本发明中,CoCr合金成核层的超薄层以高于主要(200)取向的Cr膜的极低的沉积速率溅射,接着以较高的速率和中等温度的CoCrPt基合金溅射膜溅射。 该结构产生了具有非常高的Hc,优良的PW50,低噪音和优异的低TNLD值的介质。 通过使用该技术,CoCrPt磁性膜实现了优异的面内晶体取向,并且以最小量的Pt添加到磁性膜来实现高Hc。 该方法允许形成钴的非常细的晶粒结构,这有助于良好的信噪比。 晶粒结构与晶粒间的铬分离结合,提高了信噪比。 在钴层中实现高度的面内c轴取向,其提供非常高的磁滞回线矩形度,这有助于改善OW和TNLD。 晶粒的完整性非常高,从而在磁性层中获得高各向异性,导致高Hc,而不需要添加高水平的Pt。 高度的结晶完善也有助于TNLD的低下。