公开(公告)号：US5306474A

公开(公告)日：1994-04-26

申请号：US921896

申请日：1992-07-29

申请人： Michio Kida ,  Yoshiaki Arai ,  Naoki Ono ,  Kensho Sahira

发明人： Michio Kida ,  Yoshiaki Arai ,  Naoki Ono ,  Kensho Sahira

IPC分类号： C30B15/02 ,  C30B15/12

CPC分类号： C30B15/12 ,  Y10S117/90

摘要： An apparatus for growing a single crystal is disclosed which includes a double crucible assembly. The double crucible assembly has an outer crucible and an inner crucible disposed in the outer crucible. A support member is provided for supporting the inner crucible, and the support member is formed of an inorganic oxide non-reactive with silicon oxide. The upper end portion of the inner crucible may be formed of the same inorganic oxide. Alumina or mullite is suitable as the inorganic oxide. With the above construction, silicon single crystals obtained by the crystal growing apparatus will be free of contamination by carbon or heavy metals, and will exhibit excellent quality.

摘要翻译： 公开了一种用于生长单晶的装置，其包括双坩埚组件。 双坩埚组件具有外坩埚和设置在外坩埚中的内坩埚。 提供用于支撑内坩埚的支撑构件，并且支撑构件由与氧化硅不反应的无机氧化物形成。 内坩埚的上端部可以由相同的无机氧化物形成。 氧化铝或莫来石适合作为无机氧化物。 通过上述结构，通过晶体生长装置获得的硅单晶将不受碳或重金属的污染，并且将表现出优良的品质。

公开(公告)号：US4980015A

公开(公告)日：1990-12-25

申请号：US360126

申请日：1989-06-01

申请人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

发明人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

IPC分类号： C30B15/04 ,  C30B15/12

CPC分类号： C30B15/04 ,  C30B15/12 ,  Y10T117/1052

摘要： In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

公开(公告)号：US5196173A

公开(公告)日：1993-03-23

申请号：US420518

申请日：1989-10-12

申请人： Yoshiaki Arai ,  Michio Kida ,  Naoki Ono ,  Kensho Sahira

发明人： Yoshiaki Arai ,  Michio Kida ,  Naoki Ono ,  Kensho Sahira

IPC分类号： C30B15/12 ,  H01L21/208

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： In apparatuses for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising:(a) a furnace,(b) a cylindrical double crucible assembly comprising an inner crucible in which single crystals of semiconductor material are grown at a vertical-concentric line thereof, the inner crucible having an upper part and a lower part, and an outer crucible in which melted semiconductor material is received, the outer crucible having the inner crucible disposed therein,(c) a susceptor for supporting the outer crucible,(d) rotating means for rotating the susceptor,(e) a feed pipe for supplying starting material in the space formed between the inner and the outer crucibles,(f) fluid-passage means for permitting the melted semiconductor material to flow between the inner and outer crucibles, the fluid-passage means being disposed at the lower part of the inner crucible, andwherein the inner crucible being set inside the outer crucible in a separable manner, the apparatus improved comprising:(g) joining means for setting the inner crucible inside the outer crucible concentrically, the joining means being disposed inside the furnace, and(h) engaging means for engaging the inner crucible and joining means detachably, the engaging means being disposed at the upper part of the inner crucible so as to engage a respective joining means.

公开(公告)号：US5080873A

公开(公告)日：1992-01-14

申请号：US521683

申请日：1990-05-10

申请人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

发明人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

IPC分类号： B01J4/00 ,  C30B15/02

CPC分类号： C30B15/02 ,  B01J4/001 ,  Y10S117/90 ,  Y10S117/912 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A crystal growing apparatus includes a crucible, a feed pipe and a pulling mechanism. The crucible serves to melt a crystalline material. The feed pipe serves to cause the crystalline material to fall into the crucible to charge the crucible with the crystalline material. The pulling mechanism serves to pull a single-crystal from the molten material in the crucible. The feed pipe has a lower end positioned slightly above the surface of the molten material in the crucible and including a plurality of baffle plates mounted on an inner peripheral wall thereof in longitudinally spaced relation to one another. The baffle plates are arranged so that a pitch defined between adjacent two baffle plates decreases toward the lower end of the feed pipe.

公开(公告)号：US09179149B2

公开(公告)日：2015-11-03

申请号：US13695865

申请日：2011-05-02

申请人： Masaki Kitahara ,  Atsushi Shimizu ,  Naoki Ono

发明人： Masaki Kitahara ,  Atsushi Shimizu ,  Naoki Ono

IPC分类号： H04N7/12 ,  H04N19/117 ,  H04N19/172 ,  H04N19/196 ,  H04N19/15 ,  H04N19/124 ,  H04N19/177 ,  H04N19/192

CPC分类号： H04N19/117 ,  H04N19/124 ,  H04N19/15 ,  H04N19/172 ,  H04N19/177 ,  H04N19/192 ,  H04N19/196 ,  H04N19/198

摘要： A video encoding control method encodes an input video signal by controlling a generated bit rate so a hypothetical buffer in a decoder does not overflow or underflow includes: sequentially encoding each picture in an encoding-order picture group in accordance with a predetermined encoding parameter, the encoding-order picture group including a predetermined number of pictures and being a collection of successive pictures in the order of encoding; calculating a quantization statistic of each picture based on quantization parameter information used to encode each picture each time each picture is encoded, and checking whether the quantization statistic exceeds a predetermined threshold value, and if the quantization statistic exceeds the predetermined threshold value, changing the encoding parameter so the generated bit rate resulting from encoding is reduced and performing re-encoding from a first picture of an encoding-order picture group that is being encoded using the changed encoding parameter.

摘要翻译： 视频编码控制方法通过控制所生成的比特率来对输入视频信号进行编码，因此解码器中的假想缓冲器不会溢出或下溢包括：根据预定编码参数对编码次序图像组中的每个图像进行顺序编码， 编码顺序图像组，其包括预定数量的图像，并且是编码顺序的连续图像的集合; 在每个图像被编码时，基于用于对每个图像进行编码的量化参数信息，并且检查量化统计量是否超过预定阈值，并且如果量化统计量超过预定阈值，则计算每个图像的量化统计量， 参数，使得由编码产生的生成比特率降低，并且使用正在使用改变的编码参数进行编码的编码次序图像组的第一图像进行重新编码。

公开(公告)号：US20130336387A1

公开(公告)日：2013-12-19

申请号：US14001841

申请日：2012-03-06

申请人： Naoki Ono ,  Atsushi Shimizu ,  Masaki Kitahara ,  Seisuke Kyochi

发明人： Naoki Ono ,  Atsushi Shimizu ,  Masaki Kitahara ,  Seisuke Kyochi

IPC分类号： H04N7/26

CPC分类号： H04N19/17 ,  H04N19/103 ,  H04N19/137 ,  H04N19/139 ,  H04N19/176 ,  H04N19/517 ,  H04N19/57

摘要： A video encoding device, which uses intra encoding and inter encoding with motion compensation with respect to an input video signal, includes a determination unit which determines whether the input video signal to be encoded corresponds to a stationary region, a region having minute motion, or a region having normal motion, a first encoding unit which performs inter encoding of a motion vector (0, 0) with respect to a region determined as a stationary region by the determination unit, a second encoding unit which performs motion search and inter encoding in a limited search range with respect to a region determined as a region having minute motion by the determination unit, and a third encoding unit which performs motion search and inter encoding in a normal search range with respect to a region determined as a region having normal motion by the determination unit.

摘要翻译： 一种视频编码装置，其使用相对于输入视频信号的运动补偿的帧内编码和帧间编码，包括确定单元，其确定要编码的输入视频信号是否对应于静止区域，具有微小运动的区域，或者 具有正常运动的区域，第一编码单元，其通过所述确定单元相对于被确定为静止区域的区域执行运动矢量（0,0）的编码;第二编码单元，其执行运动搜索和帧间编码 相对于由确定单元确定为具有微小运动的区域的区域的有限搜索范围，以及第三编码单元，其针对被确定为具有正常运动的区域的正常搜索范围进行运动搜索和帧间编码 由确定单元。

公开(公告)号：US06451107B2

公开(公告)日：2002-09-17

申请号：US09793862

申请日：2001-02-26

申请人： Kounosuke Kitamura ,  Naoki Ono

发明人： Kounosuke Kitamura ,  Naoki Ono

IPC分类号： C30B1328

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1008

摘要： A first step models a hot zone in a pulling apparatus of a single crystal as a mesh structure, and a second step inputs physical property values of each member corresponding to meshes combined for each member of the hot zone into a computer. A third step obtains the surface temperature distribution of each member on the basis of the calorific power of a heater and the emissivity of each member, and a fourth step obtains the internal temperature distribution of each member on the basis of the surface temperature distribution and the thermal conductivity of each member, and then further obtains the internal temperature distribution of a molten liquid being in consideration of convection. A fifth step obtains the shape of the solid-liquid interface between the single crystal and the molten liquid in accordance with an isothermal line including a tri-junction of the single crystal. A sixth step repeats said third to fifth steps until the tri-junction becomes the melting point of the single crystal. The invention aims at making the computation result and an actual measurement result of the shape of the solid-liquid interface between a single crystal and a molten liquid coincide very well with each other.

摘要翻译： 第一步骤是将作为网格结构的单晶体的拉制装置中的热区域进行建模，并且第二步骤将与热区域的每个构件组合的网孔对应的每个构件的物理属性值输入到计算机中。 第三步骤基于加热器的发热量和每个部件的发射率获得每个部件的表面温度分布，第四步骤基于表面温度分布获得每个部件的内部温度分布，并且 每个构件的导热性，然后进一步获得考虑到对流的熔融液体的内部温度分布。 第五步骤根据包括单晶三联的等温线获得单晶和熔液之间的固 - 液界面的形状。 第六步骤重复所述第三至第五步骤，直到三联成为单晶的熔点。 本发明旨在使计算结果和单晶与熔液之间的固 - 液界面形状的实际测量结果相互重合。

公开(公告)号：US09179165B2

公开(公告)日：2015-11-03

申请号：US13695700

申请日：2011-04-28

申请人： Masaki Kitahara ,  Atsushi Shimizu ,  Naoki Ono

发明人： Masaki Kitahara ,  Atsushi Shimizu ,  Naoki Ono

IPC分类号： H04N7/26 ,  H04N19/85 ,  H04N19/172 ,  H04N19/15 ,  H04N19/61 ,  H04N19/114 ,  H04N19/117 ,  H04N19/124 ,  H04N19/132 ,  H04N19/152 ,  H04N19/177 ,  H04N19/194 ,  H04N19/80

CPC分类号： H04N19/85 ,  H04N19/114 ,  H04N19/117 ,  H04N19/124 ,  H04N19/132 ,  H04N19/15 ,  H04N19/152 ,  H04N19/172 ,  H04N19/177 ,  H04N19/194 ,  H04N19/61 ,  H04N19/80

摘要： In a video encoding control method of the present invention, each picture is encoded in units of encoding-order picture groups such as GOPs, and when CPB underflow has occurred, an encoding parameter such as a quantization parameter and filter strength of a pre-filter is changed in such a manner that a generated bit rate is reduced, and an encoding-order picture group that is being encoded is re-encoded from its first picture using the changed encoding parameter.

摘要翻译： 在本发明的视频编码控制方法中，每个图像以编码顺序图像组为单位进行编码，例如GOP，当CPB下溢发生时，编码参数如量化参数和预滤波器的滤波强度 以使得生成的比特率减小的方式改变，并且正在被编码的编码顺序图像组使用改变的编码参数从其第一图像重新编码。

公开(公告)号：US08467460B2

公开(公告)日：2013-06-18

申请号：US12517534

申请日：2007-12-26

申请人： Tokinobu Mitasaki ,  Kazuto Kamikura ,  Naoki Ono

发明人： Tokinobu Mitasaki ,  Kazuto Kamikura ,  Naoki Ono

IPC分类号： H04N11/02 ,  H04N11/04

CPC分类号： H04N19/85 ,  H04N19/117 ,  H04N19/136 ,  H04N19/137 ,  H04N19/176 ,  H04N19/194 ,  H04N19/61 ,  H04N19/80

摘要： A video processing method includes dividing a processing target image, which forms a video image, into a plurality of divided areas; determining a bandwidth applied to the divided areas; computing a filter coefficient array for implementing frequency characteristics corresponding to a band limitation using the bandwidth; subjecting the image data to a filtering process using the filter coefficient array; deriving a value of error information between the obtained data and the original image data, and computing an allocation coefficient used for determining an optimum bandwidth, based on the derived value; determining, for each divided area, the optimum bandwidth corresponding to the allocation coefficient, and computing an optimum filter coefficient array for implementing the frequency characteristics corresponding to a band limitation using the optimum bandwidth; subjecting the image data of the divided area to a filtering process using the optimum filter coefficient array; and synthesizing the obtained data of each divided area.

摘要翻译： 视频处理方法包括将形成视频图像的处理目标图像划分成多个分割区域; 确定应用于分割区域的带宽; 计算用于使用所述带宽实现对应于频带限制的频率特性的滤波器系数阵列; 使用滤波器系数阵列对图像数据进行滤波处理; 导出所获得的数据与原始图像数据之间的误差信息的值，并且基于导出值来计算用于确定最佳带宽的分配系数; 对于每个分割区域，确定与分配系数相对应的最佳带宽，以及计算最佳滤波器系数阵列，以使用最佳带宽来实现对应于频带限制的频率特性; 使用最佳滤波器系数阵列对分割区域的图像数据进行滤波处理; 并且合成所获得的每个分割区域的数据。

公开(公告)号：US20060191469A1

公开(公告)日：2006-08-31

申请号：US11357826

申请日：2006-02-17

申请人： Senlin Fu ,  Naoki Ono

发明人： Senlin Fu ,  Naoki Ono

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/20 ,  Y10T117/1008

摘要： The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical property values of furnace inside components and the convection of the melt 12 before pulling up the single crystal ingot 15 by a puller 10 by use of a numerical simulation of synthetic heater transfers and a numerical simulation of melt convection. Then, the pulling velocity V of the single crystal ingot is determined from an value experienced of the ratio C=V/G of the pulling velocity V and the axial temperature gradient G of the single crystal ingot at which the single crystal ingot becomes defect-free, obtained when the single crystal ingot was pulled up by a same type puller as the puller in the past, and the axial temperature gradient G calculated by use of the simulations. Then, the ingot is pulled up at the pulling velocity, and the change value of the temperature gradient G to the deterioration value of partial furnace inside components roughly measured while the ingot is pulled up is roughly forecasted by use of the simulations. And further, the pulling velocity V of the ingot is adjusted in such a way that the ratio C should become the value experienced according to the change value of the temperature gradient G roughly forecasted.

摘要翻译： 考虑到加热器18的加热值，炉内部件的尺寸和物理特性值以及拉伸前的熔体12的对流来计算锭中的固液界面24附近的轴向温度梯度G 通过使用合成加热器传递的数值模拟和熔融对流的数值模拟，通过拉拔器10将单晶锭15提升。 然后，单晶锭的拉伸速度V根据拉伸速度V的比率C = V / G和单晶锭的缺陷的单晶锭的轴向温度梯度G的值来确定， 当通过与过去的拉拔器相同的类型的拉拔器将单晶锭拉起时获得的自由，以及通过使用模拟计算的轴向温度梯度G. 然后，以拉拔速度拉高铸块，并且通过使用模拟来粗略地预测温度梯度G的变化值与在锭被拉起时粗略测量的部分炉内部组分的劣化值。 此外，锭子的拉伸速度V被调节成使得比率C应当变成根据大致预测的温度梯度G的变化值所经历的值。