公开(公告)号：US5611854A

公开(公告)日：1997-03-18

申请号：US531399

申请日：1995-09-21

申请人： Boyd W. Veal ,  Arvydas Paulikas ,  Uthamalingam Balachandran ,  Wei Zhong

发明人： Boyd W. Veal ,  Arvydas Paulikas ,  Uthamalingam Balachandran ,  Wei Zhong

IPC分类号： C30B9/00 ,  C30B11/04

CPC分类号： C30B29/225 ,  C30B9/00 ,  Y10S117/912

摘要： A method of fabricating bulk superconducting material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta. comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta. in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa.sub.2 Cu.sub.3 O.sub.7-.delta. while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta.. R is a rare earth or Y or La and the single crystal seed has a lattice mismatch with RBa.sub.2 Cu.sub.3 O.sub.7-.delta. of less than about 2% at the growth temperature. The starting material may be such that the final product contains a minor amount of R.sub.2 BaCuO.sub.5.

摘要翻译： 一种制造包括RBa 2 Cu 3 O 7-δ的块状超导材料的方法，包括加热摩尔比R和Ba和Cu的压缩粉末氧化物和/或碳酸盐，以形成与氧化物单晶种子物理接触的RBa2Cu3O7-δ至足以形成的温度 在RBa2Cu3O7-δ中的液相，同时保持单晶种子固体生长超导材料，然后冷却以提供包括RBa 2 Cu 3 O 7-δ的材料。 R是稀土或Y或La，单晶种子在生长温度下与RBa2Cu3O7-δ晶格失配小于约2％。 起始材料可以使得最终产品含有少量的R2BaCuO5。

公开(公告)号：US5055157A

公开(公告)日：1991-10-08

申请号：US475395

申请日：1990-02-05

申请人： Carl E. Bleil

发明人： Carl E. Bleil

IPC分类号： C30B13/00 ,  C30B13/18 ,  C30B29/64

CPC分类号： C30B29/06 ,  C30B13/18 ,  Y10S117/912 ,  Y10T117/1048 ,  Y10T117/1068

摘要： Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.

摘要翻译： 晶体通过用于支撑源材料的膜，与膜接触的电容电极和与电极热接触的热管的装置生长成带状，用于首先将材料通过电极加热至接近其熔融温度，然后可控地冷却 电极，使用用于熔化区域中的膜的电极的rf加热器，用于使熔融区域的一个表面固化以形成带状物的热管，用于使熔融区域移动的拉动机构，用于熔化的加热器 用于补充熔体的大量补充材料和用于在离开区域之后加热带的辅助加热装置，以通过保持低的轴向温度梯度来防止树突生长。

公开(公告)号：US4498937A

公开(公告)日：1985-02-12

申请号：US489348

申请日：1983-04-28

申请人： Shoji Isozumi ,  Toshihiro Kusunoki

发明人： Shoji Isozumi ,  Toshihiro Kusunoki

IPC分类号： C30B19/00 ,  C30B19/04 ,  C30B19/12 ,  H01L21/208

CPC分类号： C30B19/04 ,  C30B19/12 ,  C30B29/40 ,  Y10S117/912

摘要： During liquid phase epitaxial growth of a compound semiconductor layer on a substrate, an unsaturated solution is brought into contact with a solute source crystalline plate. The plate dissolves into the solution, which creates a supercooling condition in the solution without a decrease in the temperature of the solution. The crystalline plate has a denser crystal face than that of the substrate, and/or the lattice constant of the crystalline plate is considerably different from that of the substrate.

摘要翻译： 在基板上的化合物半导体层的液相外延生长期间，使不饱和溶液与溶质源晶体板接触。 板溶解在溶液中，这在溶液中产生过冷却状态，而不降低溶液的温度。 结晶板具有比衬底更密的晶面，和/或晶片的晶格常数与衬底的晶格常数有很大不同。

公开(公告)号：US3622282A

公开(公告)日：1971-11-23

申请号：US3622282D

申请日：1967-12-19

申请人： SIEMENS AG

发明人： KELLER WOLFGANG

IPC分类号： C30B13/20 ,  B01J17/18 ,  B01J17/10

CPC分类号： C30B13/20 ,  Y10S117/91 ,  Y10S117/912 ,  Y10T117/1072

摘要： Method for producing a monocrystalline rod, such as a semiconductor rod, by crucible-free zone melting includes heating to melting temperature and end of at least two supply rod portions of given material supplied at spaced locations to a melting zone of the material, and additionally heating the melting zone with at least one additional heat source disposed within the space between the supply rod portions being supplied to the melting zone.

公开(公告)号：US3480535A

公开(公告)日：1969-11-25

申请号：US3480535D

申请日：1966-07-07

申请人： TRW INC

发明人： BLOOM MURRAY

IPC分类号： C23C14/35 ,  H01L21/00 ,  C23C15/00

CPC分类号： C23C14/35 ,  H01L21/00 ,  Y10S117/912 ,  Y10S148/049 ,  Y10S148/107 ,  Y10S148/152 ,  Y10S148/158 ,  Y10S148/166 ,  Y10S148/169 ,  Y10S148/17

公开(公告)号：US3232745A

公开(公告)日：1966-02-01

申请号：US7380960

申请日：1960-12-05

申请人： SIEMENS AG

发明人： THEODOR RUMMEL ,  HEINRICH KNIEPKAMP ,  REINER EMEIS

IPC分类号： C30B11/00 ,  C30B11/12 ,  C30B13/22

CPC分类号： C30B11/12 ,  C30B11/005 ,  C30B13/22 ,  Y10S117/901 ,  Y10S117/906 ,  Y10S117/912 ,  Y10S117/917

公开(公告)号：US20090266294A1

公开(公告)日：2009-10-29

申请号：US12108923

申请日：2008-04-24

申请人： Massoud Javidi ,  Steve Garner

发明人： Massoud Javidi ,  Steve Garner

IPC分类号： C30B19/00

CPC分类号： C30B15/02 ,  C30B15/04 ,  Y10S117/912 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1056 ,  Y10T117/1072

摘要： A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.

摘要翻译： 使用本发明的进料组件及其使用方法用于将诸如砷的高压掺杂剂添加到硅熔体中用于半导体硅晶体的CZ生长。 进料组件包括用于保持掺杂剂的容器和阀组件，以及连接到容器和阀组件的进料管组件，用于将掺杂剂输送到硅熔体。 致动器连接到进料管组件和用于将进料管组件前进和后退到硅熔体表面的接收管。 制动组件附接到致动器和接收管，用于限制进料管组件的运动并将进料管组件锁定在选定位置。

公开(公告)号：US5866094A

公开(公告)日：1999-02-02

申请号：US931997

申请日：1997-09-17

申请人： Keishi Niikura

发明人： Keishi Niikura

IPC分类号： C30B15/02 ,  C30B15/04 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/02 ,  C30B15/04 ,  Y10S117/912 ,  Y10S252/95

摘要： The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication.In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.

摘要翻译： 本发明的目的是提供一种在半导体衬底制造期间使掺杂剂和掺杂剂组合物用于容易地制备具有所需掺杂浓度的单晶的方法。 根据本发明，首先将含有掺杂剂氧化物的水溶液加入到含有胶体二氧化硅的液体中。 胶体二氧化硅可以吸附掺杂剂的氧化物以形成掺杂剂组合物。 在棒状多晶硅（即多晶硅棒）周围，掺杂剂组合物不连续地涂覆在多晶硅棒的周边上，间隔一定的间隔然后干燥。 当多晶硅棒在用于通过加热器制造单晶的装置中熔化时，掺杂剂被玻璃状二氧化硅保护而不蒸发。 因此，可以以预定浓度提供掺杂剂，以维持根据需要具有掺杂浓度的生长单晶。

公开(公告)号：US4160682A

公开(公告)日：1979-07-10

申请号：US891867

申请日：1978-03-30

申请人： Werner F. Esseluhn

发明人： Werner F. Esseluhn

IPC分类号： H01L33/00 ,  C30B19/00 ,  C30B19/06 ,  H01L21/208

CPC分类号： C30B19/065 ,  Y10S117/906 ,  Y10S117/912

摘要： In certain manufacturing operations materials are deposited onto semiconductor wafers. For example, in liquid-phase epitaxial melt deposition, wafers are exposed to a melt having constituents identical to the wafer material. In the past this has been accomplished by individually sliding the wafers into the melt and/or sliding portions of melt onto the wafers. This sliding creates a high amount of friction which in turns generates particles which can contaminate the melt. Also, this friction limits the number of wafers that can be simultaneously processed by sliding techniques. To avoid this a movable melt reservoir 62 is located above stacked stationary wafers 44. Prior to deposition, the melt 68 in the reservoir is separated from the wafers 44 by offsetting an aperture 64 in the bottom of the reservoir 62 from a passageway 58 leading to the wafers 44. The reservoir 62 is then moved to align the aperture 64 either partially or completely with the passageway 58 to give a controlled flow of the melt 68 to the wafers 44. Since the reservoir 62 only moves a short distance, the friction and particles are minimal. Also, by providing slots 74 in the top 57 of the wafer pocket 42, a gas-phase doping can be combined with the liquid deposition.

摘要翻译： 在某些制造操作中，材料沉积到半导体晶片上。 例如，在液相外延熔融沉积中，将晶片暴露于具有与晶片材料相同的成分的熔体。 在过去，这已经通过将晶片单独地滑入熔体中和/或将熔体的滑动部分滑动到晶片上来实现。 这种滑动产生大量的摩擦，这又产生可能污染熔体的颗粒。 此外，这种摩擦限制了可以通过滑动技术同时处理的晶片的数量。 为了避免这种情况，可移动的熔体储存器62位于堆叠的固定晶片44上方。在沉积之前，储存器中的熔体68通过将储存器62的底部中的孔64偏离通道58而与晶片44分离，从而导致 然后移动储存器62以将孔64部分地或完全地与通道58对准，以使熔体68受控地流到晶片44.由于储存器62仅移动较短的距离，所以摩擦和 颗粒很小。 此外，通过在晶片槽42的顶部57中设置槽74，可以将气相掺杂与液体沉积组合。

公开(公告)号：US4001076A

公开(公告)日：1977-01-04

申请号：US531570

申请日：1974-12-11

申请人： Lawrence B. Robinson ,  William Powazinik

发明人： Lawrence B. Robinson ,  William Powazinik

IPC分类号： C30B9/02 ,  C30B19/02 ,  C30B19/06 ,  B01J17/20 ,  C01D11/02 ,  C01G35/00 ,  C01G57/00

CPC分类号： C30B19/062 ,  C30B19/02 ,  C30B29/22 ,  C30B9/02 ,  Y10S117/912

摘要： Thin film epitaxial layers of mixed oxide compounds, or of solid solutions of two mixed oxides, are deposited on a suitable single crystal substrate. Growth is achieved by introducing the substrate into a crucible containing a saturated solution of the oxide(s) in a molten alkali metal halide having additional undissolved oxide(s) present in the crucible. Evaporation of the alkali metal halide solvent produces and/or maintains the supersaturated condition, which is relieved by epitaxial deposition of the oxide(s) onto the substrate. When two mixed oxides are dissolved in the solvent, the composition of the film is determined and fixed by the temperature of growth. To produce a thin film of a constant composition, growth is conducted isothermally. To produce a thin film with a graded composition throughout its thickness, growth is conducted by slowly cooling the temperature of the solution. Excess, undissolved oxide is kept in a region of the crucible such that the undissolved oxide is several degrees hotter than the liquid in contact with the substrate. This condition results in additional oxide dissolving in the solvent as elsewhere the oxide is being deposited onto the substrate. This method of epitaxial growth provides good control of both the film composition and the film thickness.