-
公开(公告)号：US20170345495A1
公开(公告)日：2017-11-30
申请号：US15624551
申请日：2017-06-15
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
公开(公告)号：US09711214B2
公开(公告)日：2017-07-18
申请号：US14941365
申请日：2015-11-13
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
公开(公告)号：US10803938B2
公开(公告)日：2020-10-13
申请号：US16536159
申请日：2019-08-08
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
公开(公告)号：US20200035298A1
公开(公告)日：2020-01-30
申请号：US16536159
申请日：2019-08-08
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
公开(公告)号：US20190108881A1
公开(公告)日：2019-04-11
申请号：US16158852
申请日：2018-10-12
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
Patent Agency Ranking
公开(公告)号：US10431302B2
公开(公告)日：2019-10-01
申请号：US16158852
申请日：2018-10-12
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
7.发明申请公开(公告)号：US20150357038A1
公开(公告)日：2015-12-10
申请号：US14827024
申请日：2015-08-14
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2213/52
Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
Abstract translation: 公开了存储器单元，器件和方法，包括涉及向电阻存储器单元施加波形以将存储器单元编程为表示逻辑值的过复位状态的存储器单元，器件和方法。
-
公开(公告)号：US10141052B2
公开(公告)日：2018-11-27
申请号：US15624551
申请日：2017-06-15
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
公开(公告)号：US09613695B2
公开(公告)日：2017-04-04
申请号：US14827024
申请日：2015-08-14
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2213/52
Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
-
公开(公告)号：US20160172030A1
公开(公告)日：2016-06-16
申请号：US14941365
申请日：2015-11-13
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.013 seconds)
