公开(公告)号：US20020067489A1

公开(公告)日：2002-06-06

申请号：US10057363

申请日：2001-10-29

Applicant: Micron Technology, Inc.

Inventor： Randhir P.S. Thakur ,  Michael Nuttall ,  J. Brett Rolfson ,  Robert James Burke

IPC: G01B011/00

CPC classification number: G01B11/303

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

Abstract translation: 公开了一种用于分析不透明材料的表面特性的方法。 该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。 然后使用UV反射计来测量未知表面特性的测试样品的反射率。 对于各种波长，优选在约250纳米到约400纳米之间的各种反射角拍摄反射率。 然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。 通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。 这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。 表面特性评估可以以对测试样品非破坏性的方式进行。 该方法对于确定集成电路技术中电容器板结构中使用的高度粒状多晶硅测试样品的电容特别有用，可用于确定平坦光滑表面的存在，以及平面上存在棱镜和半球形不规则 光滑的表面。

公开(公告)号：US20010001693A1

公开(公告)日：2001-05-24

申请号：US09732816

申请日：2000-12-08

Applicant: Micron Technology, Inc.

Inventor： Christophe Pierrat ,  J. Brett Rolfson

IPC: G03F009/00 ,  G03C005/00

CPC classification number: G03F1/30 ,  G03F1/26

Abstract: A phase shifting mask can be used with exposure lights of two different wavelengths. The depth of the phase shifting layer is calculated and fabricated such that it shifts a first exposure light about 180null and a second exposure light about 180null.

Abstract translation: 相移掩模可以与两种不同波长的曝光灯一起使用。 计算并制造相移层的深度，使得其移动约180°的第一曝光光和约180°的第二曝光光。

公开(公告)号：US20030077913A1

公开(公告)日：2003-04-24

申请号：US10304194

申请日：2002-11-25

Applicant: Micron Technology, Inc.

Inventor： Fernando Gonzalez ,  Thomas A. Figura ,  J. Brett Rolfson

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L28/40 ,  H01L21/324 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

Abstract: A method for alloying a semiconductor substrate upon which wordlines enclosed in spacers have been formed, with the substrate exposed between the wordlines. A thin sealing layer is deposited over the substrate and the wordlines, the sealing layer helping to maintain the alloy in said substrate. The alloying material employed in the substrate is hydrogen and optionally monatomic hydrogen. Alloying the substrate with monatomic hydrogen may also be done after deposition of a metal layer, or at other process steps as desired.

Abstract translation: 一种半导体衬底的合金化方法，其中已经形成了封闭在间隔物中的字线，衬底暴露在字线之间。 在衬底和字线上沉积薄的密封层，密封层有助于将合金保持在所述衬底中。 在衬底中使用的合金材料是氢和任选的单原子氢。 用单原子氢合金化基底也可以在沉积金属层之后，或者根据需要在其它工艺步骤进行。

公开(公告)号：US20030057861A1

公开(公告)日：2003-03-27

申请号：US10263490

申请日：2002-10-03

Applicant: Micron Technology, Inc.

Inventor： Terry N. Williams ,  J. Brett Rolfson

IPC: G09G003/10 ,  H01J001/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J2201/02

Abstract: Structures and methods are provided for shielding field emitter devices from radiation. In an embodiment, a shielding layer inhibits radiation from degrading field emitter devices while exerting a predetermined force upon the field emitter devices so as to restrain from damaging the structure or affecting performance of the devices. In an embodiment, the field emitter under the protection of the shielding layer sustains structural equilibrium. In an embodiment, the field emitter sustains structural elasticity. In an embodiment, the shielding layer is comprised of tetratantalum boride, which inhibits radiation from degrading field emitter devices while exerting a predetermined force upon the field emitter devices so as to restrain from damaging the structure or affecting performance of the devices. In other embodiments, the field emitter under the protection of the tetratantalum boride layer sustains structural equilibrium or structural elasticity.

Abstract translation: 提供了用于屏蔽场发射器件免受辐射的结构和方法。 在一个实施例中，屏蔽层在对场发射器件施加预定的力的同时抑制辐射降解场致发射器件，以便抑制损坏结构或影响器件的性能。 在一个实施例中，在屏蔽层保护下的场致发射体维持结构平衡。 在一个实施例中，场致发射体维持结构弹性。 在一个实施例中，屏蔽层由四硼化硼组成，其抑制辐射以降低场致发射器件，同时在场致发射器件施加预定的力，以便抑制损坏结构或影响器件的性能。 在其它实施方案中，在四硼化硼层的保护下的场发射体维持结构平衡或结构弹性。

公开(公告)号：US20030173565A1

公开(公告)日：2003-09-18

申请号：US10389510

申请日：2003-03-14

Applicant: Micron Technology, Inc.

Inventor： Fernando Gonzalez ,  Thomas A. Figura ,  J. Brett Rolfson

IPC: H01L029/04

CPC classification number: H01L28/40 ,  H01L21/324 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

Abstract: A method for alloying a semiconductor substrate upon which wordlines enclosed in spacers have been formed, with the substrate exposed between the wordlines. A thin sealing layer is deposited over the substrate and the wordlines, the sealing layer helping to maintain the alloy in said substrate. The alloying material employed in the substrate is hydrogen and optionally monatomic hydrogen. Alloying the substrate with monatomic hydrogen may also be done after deposition of a metal layer, or at other process steps as desired.