公开(公告)号：US20030014235A1

公开(公告)日：2003-01-16

申请号：US10231627

申请日：2002-08-29

Applicant: Micron Technology, Inc.

Inventor： James Burdorf ,  Christophe Pierrat

IPC: G06F009/45

CPC classification number: G03F7/705 ,  G03F7/70441 ,  Y10S430/143 ,  Y10S430/168

Abstract: A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.

公开(公告)号：US20010011199A1

公开(公告)日：2001-08-02

申请号：US09768000

申请日：2001-01-23

Applicant: Micron Technology, Inc.

Inventor： Christophe Pierrat

IPC: G06F019/00

CPC classification number: G03F1/29 ,  G03F7/70433

Abstract: The shape of chrome patterns on an optical pattern transfer tool are adjusted to get a desired shape on a wafer in the manufacture of semiconductor devices, wherein very small regions on a photoresist are defined and these regions are controlled with a high degree of accuracy. The optical pattern transfer tool has first and second planar surfaces lying in substantially parallel planes and a plurality of opaque regions overlying the first planar surface. First and second steps formed between and the first and second planar surfaces at first and second edges, respectively, define a width of the first planar surface. Each of the opaque regions are spaced from one another and offset from one another such that they are alternately aligned along a length of the first planar surface, such that one of the opaque regions is aligned with a portion of the first edge and the next one of the opaque regions along the length is aligned with a portion of the second edge. As a result of improving the process latitude of the wordline level in DRAMS, the size of the wordline over nonactive areas is reduced so that a maximum area is given for active areas for the bit contact and the container.

Abstract translation: 调整光学图案转印工具上的铬图案的形状以在半导体器件的制造中在晶片上获得期望的形状，其中限定光致抗蚀剂上的非常小的区域，并且以高精度控制这些区域。 光学图案转印工具具有位于基本上平行的平面中的第一和第二平面表面和覆盖在第一平面表面上的多个不透明区域。 在第一和第二边缘处分别形成在第一和第二平面之间的第一和第二台阶分别限定第一平面的宽度。 每个不透明区域彼此间隔开并彼此偏移，使得它们沿着第一平面表面的长度交替排列，使得不透明区域中的一个与第一边缘的一部分对准，下一个 沿着长度的不透明区域与第二边缘的一部分对准。 作为DRAMS中字线级别的处理纬度得到改善的结果，减少了非活动区域上的字线大小，从而给出了位触点和容器的有效区域的最大面积。

公开(公告)号：US20040004057A1

公开(公告)日：2004-01-08

申请号：US10318021

申请日：2002-12-13

Applicant: Micron Technology, Inc.

Inventor： Karen Huang ,  Christophe Pierrat

IPC: B29D011/00

CPC classification number: H01J9/24 ,  H01J9/025 ,  H01J29/481 ,  H01J31/127

Abstract: A process for producing multiple undercut profiles in a single material. A resist pattern is applied over a work piece and a wet etch is performed to produce an undercut in the material. This first wet etch is followed by a polymerizing dry etch which produces a polymer film in the undercut created by the first wet etch. The polymer film prevents further etching of the undercut portion during a second wet etch. Thus, an undercut profile can be obtained having a larger undercut in an underlying portion of the work piece, utilizing only a single resist application step. The work piece may be a multi-layer work piece having different layers formed of the same material, or it may be a single layer of material.

Abstract translation: 用于在单一材料中生产多个底切轮廓的方法。 将抗蚀剂图案施加在工件上，并进行湿蚀刻以在材料中产生底切。 该第一湿蚀刻之后是聚合干蚀刻，其在通过第一湿蚀刻产生的底切中产生聚合物膜。 聚合物膜在第二次湿法蚀刻期间防止进一步蚀刻底切部分。 因此，可以仅利用单个抗蚀剂涂敷步骤，在工件的下面部分中获得具有较大底切的底切轮廓。 工件可以是具有由相同材料形成的不同层的多层工件，或者它可以是单层材料。

公开(公告)号：US20020098424A1

公开(公告)日：2002-07-25

申请号：US10109757

申请日：2002-03-28

Applicant: Micron Technology, Inc.

Inventor： Douglas J. Cutter ,  Christophe Pierrat

IPC: G03F009/00 ,  G06F017/50 ,  G03C005/00

CPC classification number: G03F1/34 ,  G03F1/26 ,  G03F1/30 ,  G03F1/32 ,  G03F7/70291

Abstract: An electronically programmed mask is connected to an electronic device, such as a processor. In operation, a mask design is first entered into the processor. The processor controls a display of an image on the electronically programmed mask, wherein the display replicates conventional type masks. The electronically programmed mask is designed such that the display presented on its screen provides optical contrast and characteristics that are easily changed or reprogrammed by the processor. Electronically controlled masks provide the same patterns as mechanical type masks without requiring rigid, permanent type structures to form a desired pattern.

Abstract translation: 电子编程的掩模连接到诸如处理器的电子设备。 在操作中，首先将掩模设计输入到处理器中。 处理器控制电子编程掩模上的图像的显示，其中显示器复制常规类型掩模。 电子编程掩模被设计成使得其屏幕上呈现的显示器提供光学对比度和由处理器容易地改变或重新编程的特性。 电子控制掩模提供与机械式掩模相同的图案，而不需要刚性的永久型结构来形成所需的图案。

公开(公告)号：US20010044057A1

公开(公告)日：2001-11-22

申请号：US09918064

申请日：2001-07-30

Applicant: Micron Technology, Inc.

Inventor： Christophe Pierrat

IPC: G03C005/00 ,  G03F009/00

CPC classification number: G03F7/001 ,  G03F1/26 ,  G03F1/32

Abstract: A subresolution grating composed of approximately circular contacts is fabricated around the border of the primary pattern of a photomask. As a result, resolution at the edges of the photomask pattern is improved when the pattern is printed on a wafer surface. In addition, the reduced leakage enables a more efficient use of the glass plate on which the photomask is fabricated as well as a more efficient use of the wafer surface as a result of being able to place patterns closer together.

公开(公告)号：US20010001693A1

公开(公告)日：2001-05-24

申请号：US09732816

申请日：2000-12-08

Applicant: Micron Technology, Inc.

Inventor： Christophe Pierrat ,  J. Brett Rolfson

IPC: G03F009/00 ,  G03C005/00

CPC classification number: G03F1/30 ,  G03F1/26

Abstract: A phase shifting mask can be used with exposure lights of two different wavelengths. The depth of the phase shifting layer is calculated and fabricated such that it shifts a first exposure light about 180null and a second exposure light about 180null.

Abstract translation: 相移掩模可以与两种不同波长的曝光灯一起使用。 计算并制造相移层的深度，使得其移动约180°的第一曝光光和约180°的第二曝光光。

公开(公告)号：US20010041409A1

公开(公告)日：2001-11-15

申请号：US09817728

申请日：2001-03-26

Applicant: Micron Technology, Inc.

Inventor： Nanseng Jeng ,  Christophe Pierrat

IPC: H01L021/336

CPC classification number: H01L29/6659 ,  H01L21/0337

Abstract: This invention teaches methods and apparatus for forming self-aligned photosensitive material spacers about protruding structures in semiconductor devices. One embodiment of the invention is a method for forming a LDD structure, utilizing disposable photosensitive material spacers. A second embodiment of the invention comprises a method for forming a transistor, having salicided source/drain regions, utilizing photosensitive polyimide spacers for forming the salicided source/drain regions, without disposing of the spacers. A third embodiment of the invention comprises a method for creating an offset from a protruding structure on a semiconductor substrate, using disposable photosensitive material spacers.

Abstract translation: 本发明教导了用于在半导体器件中形成围绕突出结构的自对准感光材料间隔物的方法和装置。 本发明的一个实施例是一种利用一次性感光材料间隔物形成LDD结构的方法。 本发明的第二实施例包括一种用于形成具有水银源/漏区的晶体管的方法，利用光敏聚酰亚胺间隔物形成水银源/漏区，而不处理间隔物。 本发明的第三实施例包括使用一次性感光材料间隔件从半导体衬底上的突出结构产生偏移的方法。

公开(公告)号：US20010029403A1

公开(公告)日：2001-10-11

申请号：US09768109

申请日：2001-01-23

Applicant: Micron Technology, Inc.

Inventor： Christophe Pierrat ,  James Burdorf

IPC: G06F019/00

CPC classification number: G03F7/70558 ,  C09K8/42 ,  C09K8/508 ,  C09K8/80 ,  H01L22/20

Abstract: A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.

Abstract translation: 一种用于增强器件和集成电路制造中的工艺纬度（公差）的系统和方法。 根据关键尺寸的特征选择测量点。 然后，该模式与模型进行卷积，并且其值和变化率在第一过程参数的对应值的范围上计算。 接下来，选择具有最大变化率或对比度的最佳阈值。 最后，使用相关参数进行邻近校正。

公开(公告)号：US20010024883A1

公开(公告)日：2001-09-27

申请号：US09814715

申请日：2001-03-23

Applicant: Micron Technology, Inc.

Inventor： Karen Huang ,  Christophe Pierrat

IPC: H01L021/302

CPC classification number: H01J9/24 ,  H01J9/025 ,  H01J29/481 ,  H01J31/127

Abstract: A process for producing multiple undercut profiles in a single material. A resist pattern is applied over a work piece and a wet etch is performed to produce an undercut in the material. This first wet etch is followed by a polymerizing dry etch which produces a polymer film in the undercut created by the first wet etch. The polymer film prevents further etching of the undercut portion during a second wet etch. Thus, an undercut profile can be obtained having a larger undercut in an underlying portion of the work piece, utilizing only a single resist application step. The work piece may be a multi-layer work piece having different layers formed of the same material, or it may be a single layer of material.

公开(公告)号：US20030139833A1

公开(公告)日：2003-07-24

申请号：US10357894

申请日：2003-02-03

Applicant: Micron Technology, Inc.

Inventor： Christophe Pierrat ,  James Burdorf

IPC: G06F019/00

CPC classification number: G03F7/70558 ,  C09K8/42 ,  C09K8/508 ,  C09K8/80 ,  H01L22/20

Abstract: A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.

Abstract translation: 一种用于增强器件和集成电路制造中的工艺纬度（公差）的系统和方法。 根据关键尺寸的特征选择测量点。 然后，该模式与模型进行卷积，并且其值和变化率在第一过程参数的对应值的范围上计算。 接下来，选择具有最大变化率或对比度的最佳阈值。 最后，使用相关参数进行邻近校正。