公开(公告)号：US11995346B2

公开(公告)日：2024-05-28

申请号：US17884441

申请日：2022-08-09

Applicant: Micron Technology, Inc.

Inventor： Amiya Banerjee ,  Kranthi Kumar Vaidyula ,  Shreesha Prabhu

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: Methods, systems, and devices for resuming write operation after suspension are described. A memory system may be configured to determine an upper limit of a threshold voltage of a page of a block at which a performance of a write operation was suspended based at least in part on an indication to resume the performance of the write operation that was previously suspended at a memory system; determine a difference between a first quantity of a first logic state stored in the page and a second quantity of the first logic state associated with an unsuspended write operation based at least in part on determining the upper limit of the threshold voltage; and resume the performance of the write operation based at least in part on determining the difference between the first quantity of the first logic state and the second quantity of the first logic state.

公开(公告)号：US20240170052A1

公开(公告)日：2024-05-23

申请号：US18516049

申请日：2023-11-21

Applicant: Micron Technology, Inc.

Inventor： Amiya Banerjee ,  Kranthi Kumar Vaidyula ,  Jameer Mulani

IPC: G11C11/4096 ,  G11C11/408 ,  G11C11/4093

CPC classification number: G11C11/4096 ,  G11C11/4085 ,  G11C11/4093

Abstract: Methods, systems, and devices for reducing charge migration in a memory system are described. The memory system may receive a command to program a first set of memory cells with first data. The memory system may generate a scrambling seed to scramble the first data. Before programming the scrambled data, the memory system may compare a first set of states in the scrambled data with a second set of states in second data to determine an aggregate difference between the sets of states. If the aggregate difference is less than a threshold, the memory system may program the first set of memory cells with the first data. If the aggregate difference is greater than a threshold, the memory system may generate a new scrambling seed to rescramble the first data and determine a new aggregate difference by comparing states of the rescrambled data to the states of the second data.

公开(公告)号：US20240053916A1

公开(公告)日：2024-02-15

申请号：US17884441

申请日：2022-08-09

Applicant: Micron Technology, Inc.

Inventor： Amiya Banerjee ,  Kranthi Kumar Vaidyula ,  Shreesha Prabhu

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: Methods, systems, and devices for resuming write operation after suspension are described. A memory system may be configured to determine an upper limit of a threshold voltage of a page of a block at which a performance of a write operation was suspended based at least in part on an indication to resume the performance of the write operation that was previously suspended at a memory system; determine a difference between a first quantity of a first logic state stored in the page and a second quantity of the first logic state associated with an unsuspended write operation based at least in part on determining the upper limit of the threshold voltage; and resume the performance of the write operation based at least in part on determining the difference between the first quantity of the first logic state and the second quantity of the first logic state.

公开(公告)号：US20240268116A1

公开(公告)日：2024-08-08

申请号：US18403266

申请日：2024-01-03

Applicant: Micron Technology, Inc.

Inventor： Amiya Banerjee ,  Kranthi Kumar Vaidyula ,  Davide Resnati ,  Byeung Chul Kim ,  Kyubong Jung ,  Jameer Babasaheb Mulani ,  Jae Kyu Choi ,  Gianpietro Carnevale

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B43/35

Abstract: A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The first tiers are conductive and the second tiers are insulative at least in a finished-circuitry construction. Channel openings are formed through the first and second tiers. Charge-storage material is formed in the channel openings through the first and second tiers. The charge-storage material comprises a first charge-trap density. The first charge-trap density of the charge-storage material that is in the first tiers is increased as compared to the charge-storage material that is in the second tiers to a second charge-trap density. Channel material is formed in the channel openings through the first and second tiers and that is laterally-inward of the charge-storage material. Other embodiment, including structure, are disclosed.