公开(公告)号：US20240188299A1

公开(公告)日：2024-06-06

申请号：US18525362

申请日：2023-11-30

申请人： Micron Technology, Inc.

发明人： Christopher J. Larsen ,  S M Istiaque Hossain ,  David A. Daycock ,  Kevin R. Gast ,  George Matamis ,  Lingyu Kong ,  Sok Han Wong ,  Lhaang Chee Ooi ,  Wenjie Li

IPC分类号： H10B43/27 ,  G11C16/04 ,  H10B43/10 ,  H10B43/35

CPC分类号： H10B43/27 ,  G11C16/0483 ,  H10B43/10 ,  H10B43/35

摘要： Methods, systems, and devices for three-dimensional memory array formation techniques are described. A memory device may include a stack of materials over a substrate. The memory device may include an array of first pillars and an array of second pillars extending at least partially through the stack of materials. One or more first pillars may be excluded from one or more columns of pillars of the array first pillars. The memory device may include dielectric material in a slit extending at least partially through the stack of materials. Based on the exclusion of the one or more first pillars, the slit may have a greater width at a first portion through the stack of materials than a second portion through the stack of materials. The dielectric material located in the slit may also have a greater width at the first portion than at the second portion.