公开(公告)号：US20240242939A1

公开(公告)日：2024-07-18

申请号：US18404542

申请日：2024-01-04

Applicant: Micron Technology, Inc.

Inventor： Chao Lin Lee ,  Rachmat Wibowo ,  Lipeng Qian ,  SAMUEL SISWANTO

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3328 ,  H01J2237/3346

Abstract: Methods, systems, and devices for plasma-assisted film removal for wafer fabrication are described. The present disclosure provides in-situ techniques for removing a film from a select portion of a wafer, such as a surrounding bevel edge. After forming a film on the wafer using chemical vapor deposition (CVD), the wafer may be raised to a higher position in the chamber for CVD. A combination of gases may be ejected from a gas fixture and directed, respectively, to different portions of the wafer. The combination of gases may react to selectively remove the film from the bevel edge of the wafer and maintain the film on other portions of the wafer.