-
公开(公告)号:US20240242939A1
公开(公告)日:2024-07-18
申请号:US18404542
申请日:2024-01-04
Applicant: Micron Technology, Inc.
Inventor: Chao Lin Lee , Rachmat Wibowo , Lipeng Qian , SAMUEL SISWANTO
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/32715 , H01J2237/3321 , H01J2237/3323 , H01J2237/3328 , H01J2237/3346
Abstract: Methods, systems, and devices for plasma-assisted film removal for wafer fabrication are described. The present disclosure provides in-situ techniques for removing a film from a select portion of a wafer, such as a surrounding bevel edge. After forming a film on the wafer using chemical vapor deposition (CVD), the wafer may be raised to a higher position in the chamber for CVD. A combination of gases may be ejected from a gas fixture and directed, respectively, to different portions of the wafer. The combination of gases may react to selectively remove the film from the bevel edge of the wafer and maintain the film on other portions of the wafer.
-
公开(公告)号:US20240030006A1
公开(公告)日:2024-01-25
申请号:US17872835
申请日:2022-07-25
Applicant: Micron Technology, Inc.
Inventor: Synn Nee Chow , Robert Brian Skaggs , Chao Lin Lee , Alex James Schrinsky
CPC classification number: H01J37/32642 , H01J37/347 , H01J37/32715
Abstract: Methods, systems, and apparatuses for erosion rate monitoring for wafer fabrication equipment are described to support determining a real-time edge ring erosion rate for an edge ring used in manufacturing memory devices or other semiconductor devices. A manufacturing system may support a real-time edge ring erosion rate determination using force sensors, which may measure the weight of the edge ring. The controller may correlate the measured weight to a height of the edge ring. The controller may use the height to adjust a vertical placement of the edge ring, or one or more other manufacturing variables, during manufacturing operations, which may compensate for edge ring erosion and reduce or eliminate yield loss when manufacturing a memory device or other semiconductor device.
-