公开(公告)号：US20140045317A1

公开(公告)日：2014-02-13

申请号：US14053665

申请日：2013-10-15

Applicant: Micron Technology, Inc.

Inventor： Neal L. Davis ,  Richard T. Housley ,  Ranjan Khurana

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052

Abstract: A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.

Abstract translation: 将一系列间隔开的沟槽形成到衬底中的方法包括在衬底上形成多个间隔开的线。 各向异性蚀刻的侧壁间隔物形成在间隔开的线的相对侧上。 这些线的个体具有比在紧邻线之间的紧邻的间隔物之间​​的最小宽度的最大宽度。 去除间隔的线以在间隔件之间形成一系列交替的第一和第二掩模开口。 第一掩模开口位于间隔开的线的位置并且比第二掩模开口更宽。 交替的第一和第二沟槽分别通过交替的第一和第二掩模开口同时蚀刻到衬底中，以形成比第二沟槽在衬底内更宽和更深的第一沟槽。 公开了其他实现和实施例。

公开(公告)号：US09373636B2

公开(公告)日：2016-06-21

申请号：US14930504

申请日：2015-11-02

Applicant: Micron Technology, Inc.

Inventor： Neal L. Davis ,  David A. Kewley

IPC: H01L21/336 ,  H01L27/115

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926

Abstract: Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends through the stack and along a first direction. The panel divides the stack into a first section on a first side of the panel and a second section on a second side of the panel. Memory cell stacks are between the channel material panel and the control gate material. The memory cell stacks include cell dielectric material shaped as containers having open ends pointing toward the channel material panel, and include charge-storage material within the containers. Some embodiments include methods of forming semiconductor constructions.

Abstract translation: 一些实施例包括具有堆叠的半导体结构，所述堆叠包含交替的控制栅极材料和中间介电材料。 通道材料面板沿着第一方向延伸穿过堆叠。 所述面板将所述堆叠分成所述面板的第一侧上的第一部分和所述面板的第二侧上的第二部分。 存储单元堆叠在通道材料面板和控制栅极材料之间。 存储单元堆叠包括形状为具有指向通道材料面板的开口端的容器的单元电介质材料，并且在容器内包括电荷存储材料。 一些实施例包括形成半导体结构的方法。

公开(公告)号：US09178077B2

公开(公告)日：2015-11-03

申请号：US13675933

申请日：2012-11-13

Applicant: Micron Technology, Inc.

Inventor： Neal L. Davis ,  David A. Kewley

IPC: H01L29/788 ,  H01L29/792 ,  H01L29/66 ,  H01L27/115

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926

Abstract: Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends through the stack and along a first direction. The panel divides the stack into a first section on a first side of the panel and a second section on a second side of the panel. Memory cell stacks are between the channel material panel and the control gate material. The memory cell stacks include cell dielectric material shaped as containers having open ends pointing toward the channel material panel, and include charge-storage material within the containers. Some embodiments include methods of forming semiconductor constructions.

Abstract translation: 一些实施例包括具有堆叠的半导体结构，所述堆叠包含交替的控制栅极材料和中间介电材料。 通道材料面板沿着第一方向延伸穿过堆叠。 所述面板将所述堆叠分成所述面板的第一侧上的第一部分和所述面板的第二侧上的第二部分。 存储单元堆叠在通道材料面板和控制栅极材料之间。 存储单元堆叠包括形状为具有指向通道材料面板的开口端的容器的单元电介质材料，并且在容器内包括电荷存储材料。 一些实施例包括形成半导体结构的方法。

公开(公告)号：US20140131784A1

公开(公告)日：2014-05-15

申请号：US13675933

申请日：2012-11-13

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Neal L. Davis ,  David A. Kewley

IPC: H01L29/788 ,  H01L29/66 ,  H01L29/792

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926

Abstract: Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends through the stack and along a first direction. The panel divides the stack into a first section on a first side of the panel and a second section on a second side of the panel. Memory cell stacks are between the channel material panel and the control gate material. The memory cell stacks include cell dielectric material shaped as containers having open ends pointing toward the channel material panel, and include charge-storage material within the containers. Some embodiments include methods of forming semiconductor constructions.

Abstract translation: 一些实施例包括具有堆叠的半导体结构，所述堆叠包含交替的控制栅极材料和中间介电材料。 通道材料面板沿着第一方向延伸穿过堆叠。 所述面板将所述堆叠分成所述面板的第一侧上的第一部分和所述面板的第二侧上的第二部分。 存储单元堆叠在通道材料面板和控制栅极材料之间。 存储单元堆叠包括形状为具有指向通道材料面板的开口端的容器的单元电介质材料，并且在容器内包括电荷存储材料。 一些实施例包括形成半导体结构的方法。

公开(公告)号：US20160071878A1

公开(公告)日：2016-03-10

申请号：US14930504

申请日：2015-11-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Neal L. Davis ,  David A. Kewley

IPC: H01L27/115

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926

Abstract: Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends through the stack and along a first direction. The panel divides the stack into a first section on a first side of the panel and a second section on a second side of the panel. Memory cell stacks are between the channel material panel and the control gate material. The memory cell stacks include cell dielectric material shaped as containers having open ends pointing toward the channel material panel, and include charge-storage material within the containers. Some embodiments include methods of forming semiconductor constructions.

Abstract translation: 一些实施例包括具有堆叠的半导体结构，所述堆叠包含交替的控制栅极材料和中间介电材料。 通道材料面板沿着第一方向延伸穿过堆叠。 所述面板将所述堆叠分成所述面板的第一侧上的第一部分和所述面板的第二侧上的第二部分。 存储单元堆叠在通道材料面板和控制栅极材料之间。 存储单元堆叠包括形状为具有指向通道材料面板的开口端的容器的单元电介质材料，并且在容器内包括电荷存储材料。 一些实施例包括形成半导体结构的方法。

公开(公告)号：US08796086B2

公开(公告)日：2014-08-05

申请号：US14053665

申请日：2013-10-15

Applicant: Micron Technology, Inc.

Inventor： Neal L. Davis ,  Richard T. Housley ,  Ranjan Khurana

IPC: H01L21/8238

CPC classification number: H01L21/76224 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052

Abstract: A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.

Abstract translation: 将一系列间隔开的沟槽形成到衬底中的方法包括在衬底上形成多个间隔开的线。 各向异性蚀刻的侧壁间隔物形成在间隔开的线的相对侧上。 这些线的个体具有比在紧邻线之间的紧邻的间隔物之间​​的最小宽度的最大宽度。 去除间隔的线以在间隔件之间形成一系列交替的第一和第二掩模开口。 第一掩模开口位于间隔开的线的位置并且比第二掩模开口更宽。 交替的第一和第二沟槽分别通过交替的第一和第二掩模开口同时蚀刻到衬底中，以形成比第二沟槽在衬底内更宽和更深的第一沟槽。 公开了其他实现和实施例。