-
公开(公告)号:US12079077B2
公开(公告)日:2024-09-03
申请号:US17645180
申请日:2021-12-20
Applicant: Micron Technology, Inc.
Inventor: Crescenzo Attanasio , Carminantonio Manganelli , Massimo Iaculo , Paolo Papa , Antonio Eliso
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/0631 , G06F3/0656 , G06F3/0679 , G06F11/0757 , G06F11/0772
Abstract: Methods, systems, and devices for device fault condition reporting are described. A host system may transmit, to a memory system, a command to perform an operation. The memory system may receive the command and identify a fault condition associated with performing the operation. The memory system may transmit, to the host system, a message that indicates the fault condition. After the memory system transmits the message, the memory system may enter a safe mode of operation based on identifying the fault condition.
-
公开(公告)号:US20240272820A1
公开(公告)日:2024-08-15
申请号:US18423018
申请日:2024-01-25
Applicant: Micron Technology, Inc.
Inventor: Paolo Papa , Luigi Esposito , Massimo Iaculo , Giuseppe D'Eliseo , Alberto Sassara , Carminantonio Manganelli , Salvatore Del Prete
CPC classification number: G06F3/064 , G06F3/0604 , G06F12/0246 , G06F12/0646 , G06F2212/1024 , G06F2212/1044 , G06F2212/657 , G06F2212/7205
Abstract: Methods, systems, and devices for data relocation operation techniques are described. A memory system may include blocks of memory cells, for example, within a non-volatile memory device of the memory system. The memory system may identify a command to perform a data relocation operation associated with a block of memory cells and may select between a first procedure and a second procedure for performing the data relocation operation. The memory system may select between the first procedure and the second procedure based on whether one or more parameters associated with the data relocation operation satisfy a threshold. For example, the memory system may select the first procedure if the one or more parameters satisfy the threshold and may select the second procedure if the one or more parameters do not satisfy the threshold. The memory system may perform the data relocation operation using the selected procedure.
-
公开(公告)号:US11922069B2
公开(公告)日:2024-03-05
申请号:US17750131
申请日:2022-05-20
Applicant: Micron Technology, Inc.
Inventor: Alberto Sassara , Giuseppe D'Eliseo , Lalla Fatima Drissi , Luigi Esposito , Paolo Papa , Salvatore Del Prete , Xiangang Luo , Xiaolai Zhu
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/061 , G06F3/0679
Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.
-
公开(公告)号:US20230033903A1
公开(公告)日:2023-02-02
申请号:US17962236
申请日:2022-10-07
Applicant: Micron Technology, Inc.
Inventor: Angelo Della Monica , Paolo Papa , Carminantonio Manganelli , Massimo Laculo
IPC: G06F9/50 , G06F12/1009 , G06F3/06
Abstract: A variety of applications can include systems and methods that control a memory size of a changelog in a storage device, where the changelog is implemented to correlate virtual page addresses to physical addresses in one or more memory devices. The memory size can be controlled by an allocation schema for a scalable memory area for the changelog in the storage device. The allocation schema can include using bitmaps, lists linked to the bitmaps, and a counter to count bits asserted in the bitmaps such that the allocation of memory space in the storage device can depend on usage rather than allocating a large memory space for all possible correlations of virtual page addresses to physical addresses.
-
公开(公告)号:US20210357127A1
公开(公告)日:2021-11-18
申请号:US16488696
申请日:2019-03-15
Applicant: Micron Technology, Inc.
Inventor: Paolo Papa , Carminantonio Manganelli , Massimo Iaculo , Giuseppe D'Eliseo , Alberto Sassara
IPC: G06F3/06
Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.
-
公开(公告)号:US11100996B2
公开(公告)日:2021-08-24
申请号:US15690889
申请日:2017-08-30
Applicant: Micron Technology, Inc.
Inventor: Paolo Papa , Luigi Esposito , Massimo Iaculo , Eric Kwok Fung Yuen , Gerard J. Perdaems
Abstract: Devices and techniques for managing flash memory are disclosed herein. A memory controller may receive a first program request comprising first host data to be written to the flash memory. The flash memory may comprise a number of storage units with each storage unit comprising a number of storage sub-units. If the first host data is less than a remainder threshold, the memory controller may generate a first program data unit comprising the first host data and first log data describing the flash memory. The memory controller may program the program data unit to the first storage unit of the flash memory, where the first log data is written to a first storage sub-unit of the number of storage sub-unit. The memory controller may also store an indication that the first storage sub-unit is invalid.
-
公开(公告)号:US20240272832A1
公开(公告)日:2024-08-15
申请号:US18586207
申请日:2024-02-23
Applicant: Micron Technology, Inc.
Inventor: Alberto Sassara , Giuseppe D'Eliseo , Lalla Fatima Drissi , Luigi Esposito , Paolo Papa , Salvatore Del Prete , Xiangang Luo , Xiaolai Zhu
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/061 , G06F3/0679
Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.
-
公开(公告)号:US20240069741A1
公开(公告)日:2024-02-29
申请号:US17899341
申请日:2022-08-30
Applicant: Micron Technology, Inc.
Inventor: Luigi Esposito , Paolo Papa
CPC classification number: G06F3/0616 , G06F3/0653 , G06F3/0679 , G06F12/0292 , G06F2212/1036
Abstract: Methods, systems, and devices for dynamic wear leveling techniques are described. A memory system may determine a type of data associated with data to be written to a block of the memory system. The memory system may determine the type of data based on a value of a counter associated with a segment of a mapping of the memory system that includes a logical address of the data. Additionally, or alternatively, the memory system may determine the type of data based on determining a quantity of invalid data in a set of recently selected (e.g., opened) blocks of the memory system. The memory system may select the block for storing the data based on the type of data and a quantity of times that the block has been erased and write the data to the selected block.
-
公开(公告)号:US20230376245A1
公开(公告)日:2023-11-23
申请号:US17750131
申请日:2022-05-20
Applicant: Micron Technology, Inc.
Inventor: Alberto Sassara , Giuseppe D'Eliseo , Lalla Fatima Drissi , Luigi Esposito , Paolo Papa , Salvatore Del Prete , Xiangang Luo , Xiaolai Zhu
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/061 , G06F3/0679
Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.
-
公开(公告)号:US11705201B2
公开(公告)日:2023-07-18
申请号:US17409413
申请日:2021-08-23
Applicant: Micron Technology, Inc.
Inventor: Paolo Papa , Luigi Esposito , Massimo Iaculo , Eric Kwok Fung Yuen , Gerard J. Perdaems
CPC classification number: G11C16/10 , G06F3/0604 , G06F3/064 , G06F3/0619 , G06F3/0643 , G06F3/0659 , G06F3/0679 , G06F11/079 , G06F11/0727 , G06F11/0778 , G11C16/0483
Abstract: Devices and techniques for managing flash memory are disclosed herein. A memory controller may receive a first program request comprising first host data to be written to the flash memory. The flash memory may comprise a number of storage units with each storage unit comprising a number of storage sub-units. If the first host data is less than a remainder threshold, the memory controller may generate a first program data unit comprising the first host data and first log data describing the flash memory. The memory controller may program the program data unit to the first storage unit of the flash memory, where the first log data is written to a first storage sub-unit of the number of storage sub-unit. The memory controller may also store an indication that the first storage sub-unit is invalid.
-
-
-
-
-
-
-
-
-