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公开(公告)号：US10942796B2
公开(公告)日：2021-03-09
申请号：US16544190
申请日：2019-08-19
发明人： Michael G. Miller , Ashutosh Malshe , Violante Moschiano , Peter Feeley , Gary F. Besinga , Sampath K. Ratnam , Walter Di-Francesco , Renato C. Padilla, Jr. , Yun Li , Kishore Kumar Muchherla
IPC分类号： G11C11/34 , G06F11/07 , G06F3/06 , G06F11/10 , G11C11/56 , G11C16/10 , G11C16/22 , G11C16/30 , G11C16/34 , G11C5/14
摘要： Apparatus having an array of memory cells include a controller configured to read a particular memory cell of a last written page of memory cells of a block of memory cells of the array of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
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公开(公告)号：US09921898B1
公开(公告)日：2018-03-20
申请号：US15390833
申请日：2016-12-27
发明人： Michael G. Miller , Ashutosh Malshe , Violante Moschiano , Peter Feeley , Gary F. Besinga , Sampath K. Ratnam , Walter Di-Francesco , Renato C. Padilla, Jr. , Yun Li , Kishore Kumar Muchherla
CPC分类号： G06F11/073 , G06F3/0619 , G06F3/0659 , G06F3/0679 , G06F11/0751 , G06F11/0772 , G06F11/079
摘要： Apparatus and methods of operating such apparatus include iteratively programming a group of memory cells to respective desired data states, wherein a particular memory cell is configured to store overhead data and a different memory cell is configured to store user data; determining whether a power loss to the apparatus is indicated while iteratively programming the group of memory cells; and if a power loss to the apparatus is indicated, changing the desired data state of the particular memory cell before continuing with the programming. Apparatus and methods of operating such apparatus further include reading a data state of a particular memory cell of a last written page of memory cells, and marking the page as affected by power loss during a programming operation if the particular memory cell has any data state other than a particular data state.
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公开(公告)号：US10430262B2
公开(公告)日：2019-10-01
申请号：US16178963
申请日：2018-11-02
发明人： Michael G. Miller , Ashutosh Malshe , Violante Moschiano , Peter Feeley , Gary F. Besinga , Sampath K. Ratnam , Walter Di-Francesco , Renato C. Padilla, Jr. , Yun Li , Kishore Kumar Muchherla
IPC分类号： G11C16/10 , G06F11/07 , G06F3/06 , G06F11/10 , G11C11/56 , G11C16/22 , G11C16/30 , G11C16/34 , G11C5/14
摘要： Apparatus having an array of memory cells include a controller configured to read a particular memory cell of a last written page of memory cells of a block of memory cells of the array of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
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公开(公告)号：US10430116B2
公开(公告)日：2019-10-01
申请号：US15693121
申请日：2017-08-31
发明人： Michael G. Miller , Kishore Kumar Muchherla , Harish Singidi , Sampath Ratnam , Renato C. Padilla, Jr. , Gary F. Besinga , Peter Sean Feeley
摘要： Devices and techniques for correcting for power loss in NAND memory devices are disclosed herein. The NAND memory devices may comprise a number of physical pages. For example, a memory controller may detect a power loss indicator at the NAND flash memory. The memory controller may identify a last-written physical page and determine whether the last-written physical page comprises more than a threshold number of low-read-margin cells. If the last-written physical page comprises more than the threshold number of low-read-margin cells, the memory controller may provide a programming voltage to at least the low-read-margin cells.
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公开(公告)号：US10303535B2
公开(公告)日：2019-05-28
申请号：US15911490
申请日：2018-03-05
发明人： Michael G. Miller , Ashutosh Malshe , Violante Moschiano , Peter Feeley , Gary F. Besinga , Sampath K. Ratnam , Walter Di-Francesco , Renato C. Padilla, Jr. , Yun Li , Kishore Kumar Muchherla
摘要： Apparatus include controllers configured to iteratively program a group of memory cells to respective desired data states; determine whether a power loss to the apparatus is indicated while iteratively programming the group of memory cells; and if a power loss to the apparatus is indicated, to change the desired data state of the particular memory cell before continuing with the programming. Apparatus further include controllers configured to read a particular memory cell of a last written page of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and to mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
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