公开(公告)号：US11600665B2

公开(公告)日：2023-03-07

申请号：US17069347

申请日：2020-10-13

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Fabio Pellizzer ,  Innocenzo Tortorelli ,  Roberto Somaschini ,  Cristina Casellato ,  Riccardo Mottadelli

IPC: H01L45/00 ,  H01L27/24

Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.

公开(公告)号：US09806129B2

公开(公告)日：2017-10-31

申请号：US14189490

申请日：2014-02-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Fabio Pellizzer ,  Innocenzo Tortorelli ,  Roberto Somaschini ,  Cristina Casellato ,  Riccardo Mottadelli

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.

公开(公告)号：US10854674B2

公开(公告)日：2020-12-01

申请号：US15693102

申请日：2017-08-31

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Fabio Pellizzer ,  Innocenzo Tortorelli ,  Roberto Somaschini ,  Cristina Casellato ,  Riccardo Mottadelli

IPC: H01L27/24 ,  H01L45/00

Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.

公开(公告)号：US20170365642A1

公开(公告)日：2017-12-21

申请号：US15693102

申请日：2017-08-31

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Fabio Pellizzer ,  Innocenzo Tortorelli ,  Roberto Somaschini ,  Cristina Casellato ,  Riccardo Mottadelli

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.

公开(公告)号：US20210091140A1

公开(公告)日：2021-03-25

申请号：US17069347

申请日：2020-10-13

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Fabio Pellizzer ,  Innocenzo Tortorelli ,  Roberto Somaschini ,  Cristina Casellato ,  Riccardo Mottadelli

IPC: H01L27/24 ,  H01L45/00

Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.

公开(公告)号：US20150243708A1

公开(公告)日：2015-08-27

申请号：US14189490

申请日：2014-02-25

Applicant: MICRON TECHNOLOGY, INC

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Fabio Pellizzer ,  Innocenzo Tortorelli ,  Roberto Somaschini ,  Cristina Casellato ,  Riccardo Mottadelli

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.

Abstract translation: 所公开的技术通常涉及集成电路器件，特别涉及交叉点存储器阵列及其制造方法。 在一个方面，一种制造交叉点存储器阵列的方法包括形成存储单元材料堆，所述存储单元材料堆在第一活性材料上包括第一活性材料和第二活性材料，其中第一和第二活性材料之一包括存储材料 并且第一和第二活性材料中的另一个包括选择材料。 制造交叉点阵列的方法还包括对存储单元材料堆叠进行图案化，其包括通过存储单元材料堆叠的第一和第二活性材料中的至少一个的蚀刻，在至少一个的至少一个的侧壁上形成保护衬垫 在蚀刻通过第一和第二活性材料之一之后蚀刻第一和第二活性材料，并且在第一和第二活性材料之一的侧壁上形成保护衬垫之后进一步蚀刻存储单元材料堆叠。