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公开(公告)号:US20220406388A1
公开(公告)日:2022-12-22
申请号:US17736902
申请日:2022-05-04
Applicant: Micron Technology, Inc.
Inventor: Umberto Siciliani , Tao Liu , Ting Luo , Dionisio Minopoli , Giuseppe D'Eliseo , Giuseppe Ferrari , Walter Di'Francesco , Antonino Pollio , Luigi Esposito , Anna Scalesse , Allison J. Olson , Anna Chiara Siviero
Abstract: Methods, systems, and devices for setting switching for single-level cells (SLCs) are described. A memory system may receive an access command from a host. The access command may correspond to an SLC block or to a multiple-level cell block. If the access command corresponds to an SLC block, the memory system may modify the access command to include one or more bits indicating a setting to use for performing the access operation corresponding to the access command. The setting may define one or more operating parameters for performing the access operation. The memory system may use bits to indicate the setting that are used to indicate a page address for multiple-level cell blocks. The memory system may issue the access command to a memory device, which may perform the access operation using the setting indicated in the one or more bits included by the memory system.