公开(公告)号：US11423976B2

公开(公告)日：2022-08-23

申请号：US16896750

申请日：2020-06-09

Applicant: Micron Technology, Inc.

Inventor： Jeremy Binfet ,  Mark Helm ,  William Filipiak ,  Mark Hawes

IPC: G11C11/419 ,  G11C16/24 ,  G11C7/10 ,  G11C7/22 ,  G11C7/08 ,  G11C16/20 ,  G11C16/26 ,  G11C7/20 ,  G11C16/04

Abstract: Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.

公开(公告)号：US20220383949A1

公开(公告)日：2022-12-01

申请号：US17884861

申请日：2022-08-10

Applicant: Micron Technology, Inc.

Inventor： Jeremy Binfet ,  Mark Helm ,  William Filipiak ,  Mark Hawes

IPC: G11C11/419 ,  G11C7/08 ,  G11C7/10 ,  G11C7/20 ,  G11C16/20 ,  G11C16/24 ,  G11C16/26 ,  G11C7/22

Abstract: Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.

公开(公告)号：US20190066771A1

公开(公告)日：2019-02-28

申请号：US15688645

申请日：2017-08-28

Applicant: Micron Technology, Inc.

Inventor： Jeremy Binfet ,  Mark Helm ,  William Filipiak ,  Mark Hawes

IPC: G11C11/419 ,  G11C16/24 ,  G11C7/10 ,  G11C7/22 ,  G11C7/08

Abstract: Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.

公开(公告)号：US12119051B2

公开(公告)日：2024-10-15

申请号：US17884861

申请日：2022-08-10

Applicant: Micron Technology, Inc.

Inventor： Jeremy Binfet ,  Mark Helm ,  William Filipiak ,  Mark Hawes

IPC: G11C11/419 ,  G11C7/08 ,  G11C7/10 ,  G11C7/20 ,  G11C7/22 ,  G11C16/20 ,  G11C16/24 ,  G11C16/26 ,  G11C16/04

CPC classification number: G11C11/419 ,  G11C7/08 ,  G11C7/1015 ,  G11C7/1072 ,  G11C7/20 ,  G11C7/227 ,  G11C16/20 ,  G11C16/24 ,  G11C16/26 ,  G11C16/0483 ,  G11C2207/2281

Abstract: Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.

公开(公告)号：US10685702B2

公开(公告)日：2020-06-16

申请号：US15688645

申请日：2017-08-28

Applicant: Micron Technology, Inc.

Inventor： Jeremy Binfet ,  Mark Helm ,  William Filipiak ,  Mark Hawes

IPC: G11C11/419 ,  G11C16/24 ,  G11C7/10 ,  G11C7/22 ,  G11C7/08 ,  G11C16/20 ,  G11C16/26 ,  G11C7/20 ,  G11C16/04

Abstract: Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.